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This content will become publicly available on December 20, 2018

Title: Optical properties of implanted Xe color centers in diamond

Optical properties of color centers in diamond have been the subject of intense research due to their promising applications in quantum photonics. Here in this work we study the optical properties of Xe related color centers implanted into nitrogen rich (type IIA) and an ultrapure, electronic grade diamond. The Xe defect has two zero phonon lines at 794 nm and 811 nm, which can be effectively excited using both green and red excitation, however, its emission in the nitrogen rich diamond is brighter. Near resonant excitation is performed at cryogenic temperatures and luminescence is probed under strong magnetic field. Finally, our results are important towards the understanding of the Xe related defect and other near infrared color centers in diamond.
Authors:
 [1] ;  [2] ;  [3] ;  [2] ;  [1] ;  [4] ;  [2] ;  [1]
  1. Univ. of Technology Sydney, Ultimo, NSW (Australia). School of Mathematical and Physical Sciences
  2. Nanyang Technological Univ. (Singapore). School of Physical and Mathematical Sciences, Division of Physics and Applied Physics
  3. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  4. Univ. of Warwick, Coventry (United Kingdom). Dept. of Physics
Publication Date:
Report Number(s):
LLNL-JRNL-727262
Journal ID: ISSN 0030-4018
Grant/Contract Number:
AC52-07NA27344; FA2386-17-1-4064
Type:
Accepted Manuscript
Journal Name:
Optics Communications
Additional Journal Information:
Journal Volume: 411; Journal Issue: C; Journal ID: ISSN 0030-4018
Publisher:
Elsevier
Research Org:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org:
USDOE; Australian Research Council (ARC); Asian Office of Aerospace Research and Development
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
OSTI Identifier:
1418933