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Title: Optical properties of implanted Xe color centers in diamond

Abstract

Optical properties of color centers in diamond have been the subject of intense research due to their promising applications in quantum photonics. Here in this work we study the optical properties of Xe related color centers implanted into nitrogen rich (type IIA) and an ultrapure, electronic grade diamond. The Xe defect has two zero phonon lines at 794 nm and 811 nm, which can be effectively excited using both green and red excitation, however, its emission in the nitrogen rich diamond is brighter. Near resonant excitation is performed at cryogenic temperatures and luminescence is probed under strong magnetic field. Finally, our results are important towards the understanding of the Xe related defect and other near infrared color centers in diamond.

Authors:
 [1];  [2];  [3];  [2];  [1];  [4];  [2];  [1]
  1. Univ. of Technology Sydney, Ultimo, NSW (Australia). School of Mathematical and Physical Sciences
  2. Nanyang Technological Univ. (Singapore). School of Physical and Mathematical Sciences, Division of Physics and Applied Physics
  3. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  4. Univ. of Warwick, Coventry (United Kingdom). Dept. of Physics
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE; Australian Research Council (ARC); Asian Office of Aerospace Research and Development
OSTI Identifier:
1418933
Alternate Identifier(s):
OSTI ID: 1495932
Report Number(s):
LLNL-JRNL-727262
Journal ID: ISSN 0030-4018
Grant/Contract Number:  
AC52-07NA27344; FA2386-17-1-4064
Resource Type:
Accepted Manuscript
Journal Name:
Optics Communications
Additional Journal Information:
Journal Volume: 411; Journal Issue: C; Journal ID: ISSN 0030-4018
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Sandstrom, Russell, Ke, Li, Martin, Aiden, Wang, Ziyu, Kianinia, Mehran, Green, Ben, Gao, Wei-bo, and Aharonovich, Igor. Optical properties of implanted Xe color centers in diamond. United States: N. p., 2017. Web. doi:10.1016/j.optcom.2017.11.064.
Sandstrom, Russell, Ke, Li, Martin, Aiden, Wang, Ziyu, Kianinia, Mehran, Green, Ben, Gao, Wei-bo, & Aharonovich, Igor. Optical properties of implanted Xe color centers in diamond. United States. doi:10.1016/j.optcom.2017.11.064.
Sandstrom, Russell, Ke, Li, Martin, Aiden, Wang, Ziyu, Kianinia, Mehran, Green, Ben, Gao, Wei-bo, and Aharonovich, Igor. Wed . "Optical properties of implanted Xe color centers in diamond". United States. doi:10.1016/j.optcom.2017.11.064. https://www.osti.gov/servlets/purl/1418933.
@article{osti_1418933,
title = {Optical properties of implanted Xe color centers in diamond},
author = {Sandstrom, Russell and Ke, Li and Martin, Aiden and Wang, Ziyu and Kianinia, Mehran and Green, Ben and Gao, Wei-bo and Aharonovich, Igor},
abstractNote = {Optical properties of color centers in diamond have been the subject of intense research due to their promising applications in quantum photonics. Here in this work we study the optical properties of Xe related color centers implanted into nitrogen rich (type IIA) and an ultrapure, electronic grade diamond. The Xe defect has two zero phonon lines at 794 nm and 811 nm, which can be effectively excited using both green and red excitation, however, its emission in the nitrogen rich diamond is brighter. Near resonant excitation is performed at cryogenic temperatures and luminescence is probed under strong magnetic field. Finally, our results are important towards the understanding of the Xe related defect and other near infrared color centers in diamond.},
doi = {10.1016/j.optcom.2017.11.064},
journal = {Optics Communications},
number = C,
volume = 411,
place = {United States},
year = {2017},
month = {12}
}

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Figures / Tables:

Figure 1 Figure 1: (a) 500 keV 129Xe ions were implanted into two separate diamonds – electronic grade with ~ ppb nitrogen concentration and type IIA with ~ppm nitrogen concentration. The doses are given in ions/cm2 (b) Implantation depth profile of 500 keV 129Xe ions into single crystal diamond calculated using themore » SRIM software package. A single Gaussian fit to the implantation profile produces a peak depth of 105 nm and a FWHM of 26 nm.« less

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Works referencing / citing this record:

On the route to produce conductive Ni-related color centers in CVD-grown diamond
journal, July 2019

  • Carcione, Rocco; Tamburri, Emanuela; Bartali, Ruben
  • Multifunctional Materials, Vol. 2, Issue 3
  • DOI: 10.1088/2399-7532/ab2c35

On the route to produce conductive Ni-related color centers in CVD-grown diamond
journal, July 2019

  • Carcione, Rocco; Tamburri, Emanuela; Bartali, Ruben
  • Multifunctional Materials, Vol. 2, Issue 3
  • DOI: 10.1088/2399-7532/ab2c35

    Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.