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This content will become publicly available on August 31, 2018

Title: Low-Cost Approaches to III–V Semiconductor Growth for Photovoltaic Applications

III–V semiconductors form the most efficient single- and multijunction photovoltaics. Metal–organic vapor-phase epitaxy, which uses toxic and pyrophoric gas-phase precursors, is the primary commercial growth method for these materials. In order for the use of highly efficient III–V-based devices to be expanded as the demand for renewable electricity grows, a lower-cost approach to the growth of these materials is needed. This Review focuses on three deposition techniques compatible with current device architectures: hydride vapor-phase epitaxy, close-spaced vapor transport, and thin-film vapor–liquid–solid growth. Here, we consider recent advances in each technique, including the available materials space, before providing an in-depth comparison of growth technology advantages and limitations and considering the impact of modifications to the method of production on the cost of the final photovoltaics.
Authors:
ORCiD logo [1] ;  [2] ;  [1] ;  [1] ; ORCiD logo [1]
  1. Univ. of Oregon, Eugene, OR (United States). Dept. of Chemistry and Biochemistry
  2. Univ. of Oregon, Eugene, OR (United States). Dept. of Physics
Publication Date:
Grant/Contract Number:
EE0007361; AC02-05CH11231
Type:
Accepted Manuscript
Journal Name:
ACS Energy Letters
Additional Journal Information:
Journal Volume: 2; Journal Issue: 10; Journal ID: ISSN 2380-8195
Publisher:
American Chemical Society (ACS)
Research Org:
Univ. of Oregon, Eugene, OR (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY
OSTI Identifier:
1418849