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Title: Low-Cost Approaches to III–V Semiconductor Growth for Photovoltaic Applications

III–V semiconductors form the most efficient single- and multijunction photovoltaics. Metal–organic vapor-phase epitaxy, which uses toxic and pyrophoric gas-phase precursors, is the primary commercial growth method for these materials. In order for the use of highly efficient III–V-based devices to be expanded as the demand for renewable electricity grows, a lower-cost approach to the growth of these materials is needed. This Review focuses on three deposition techniques compatible with current device architectures: hydride vapor-phase epitaxy, close-spaced vapor transport, and thin-film vapor–liquid–solid growth. Here, we consider recent advances in each technique, including the available materials space, before providing an in-depth comparison of growth technology advantages and limitations and considering the impact of modifications to the method of production on the cost of the final photovoltaics.
Authors:
ORCiD logo [1] ;  [2] ;  [1] ;  [1] ; ORCiD logo [1]
  1. Univ. of Oregon, Eugene, OR (United States). Dept. of Chemistry and Biochemistry
  2. Univ. of Oregon, Eugene, OR (United States). Dept. of Physics
Publication Date:
Grant/Contract Number:
EE0007361; AC02-05CH11231
Type:
Accepted Manuscript
Journal Name:
ACS Energy Letters
Additional Journal Information:
Journal Volume: 2; Journal Issue: 10; Journal ID: ISSN 2380-8195
Publisher:
American Chemical Society (ACS)
Research Org:
Univ. of Oregon, Eugene, OR (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY
OSTI Identifier:
1418849

Greenaway, Ann L., Boucher, Jason W., Oener, Sebastian Z., Funch, Christopher J., and Boettcher, Shannon W.. Low-Cost Approaches to III–V Semiconductor Growth for Photovoltaic Applications. United States: N. p., Web. doi:10.1021/acsenergylett.7b00633.
Greenaway, Ann L., Boucher, Jason W., Oener, Sebastian Z., Funch, Christopher J., & Boettcher, Shannon W.. Low-Cost Approaches to III–V Semiconductor Growth for Photovoltaic Applications. United States. doi:10.1021/acsenergylett.7b00633.
Greenaway, Ann L., Boucher, Jason W., Oener, Sebastian Z., Funch, Christopher J., and Boettcher, Shannon W.. 2017. "Low-Cost Approaches to III–V Semiconductor Growth for Photovoltaic Applications". United States. doi:10.1021/acsenergylett.7b00633. https://www.osti.gov/servlets/purl/1418849.
@article{osti_1418849,
title = {Low-Cost Approaches to III–V Semiconductor Growth for Photovoltaic Applications},
author = {Greenaway, Ann L. and Boucher, Jason W. and Oener, Sebastian Z. and Funch, Christopher J. and Boettcher, Shannon W.},
abstractNote = {III–V semiconductors form the most efficient single- and multijunction photovoltaics. Metal–organic vapor-phase epitaxy, which uses toxic and pyrophoric gas-phase precursors, is the primary commercial growth method for these materials. In order for the use of highly efficient III–V-based devices to be expanded as the demand for renewable electricity grows, a lower-cost approach to the growth of these materials is needed. This Review focuses on three deposition techniques compatible with current device architectures: hydride vapor-phase epitaxy, close-spaced vapor transport, and thin-film vapor–liquid–solid growth. Here, we consider recent advances in each technique, including the available materials space, before providing an in-depth comparison of growth technology advantages and limitations and considering the impact of modifications to the method of production on the cost of the final photovoltaics.},
doi = {10.1021/acsenergylett.7b00633},
journal = {ACS Energy Letters},
number = 10,
volume = 2,
place = {United States},
year = {2017},
month = {8}
}