Growth of high-quality Bi2Se3 topological insulators using (Bi1-xInx) 2Se3 buffer layers

Wang, Yong; Ginley, Theresa P.; Law, Stephanie

doi:10.1116/1.5015968

Title: Growth of high-quality Bi₂Se₃ topological insulators using (Bi_1-xIn_x) ₂Se₃ buffer layers

Abstract

Here, the authors first report on the optimum growth parameters for Bi_1-xIn_x) ₂Se₃ alloys of arbitrary composition using molecular beam epitaxy. It is found that smooth, single-phase films can only be obtained by using a sequential growth and annealing method to seed the film, after which normal codeposition growth can be used. The topological insulator Bi₂Se₃ is then grown on top of various (Bi_1-xIn_x) ₂Se₃ buffers and the electrical properties measured. For Bi₂Se₃ films grown on high-quality buffer layers, the mobility is greatly enhanced and the carrier density reduced compared to growth directly on sapphire substrates, indicating a significant improvement in film quality. The use of an almost lattice-matched trivially insulating buffer layer is therefore vital to the growth of high-quality topological insulators on arbitrary substrates.

Authors:

Wang, Yong ^[1]; Ginley, Theresa P. ^[1]; Law, Stephanie ^[1]

Univ. of Delaware, Newark, DE (United States)

Publication Date:: Tue Jan 30 00:00:00 EST 2018

Research Org.:: Univ. of Delaware, Newark, DE (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1593345

Alternate Identifier(s):: OSTI ID: 1418715

Grant/Contract Number:: SC0017801; SC0016380

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Vacuum Science and Technology B

Additional Journal Information:: Journal Volume: 36; Journal Issue: 2; Journal ID: ISSN 2166-2746

Publisher:: American Vacuum Society / AIP

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Wang, Yong, Ginley, Theresa P., and Law, Stephanie. Growth of high-quality Bi2Se3 topological insulators using (Bi1-xInx) 2Se3 buffer layers.  United States: N. p., 2018. 
Web.  doi:10.1116/1.5015968.

Copy to clipboard


                    Wang, Yong, Ginley, Theresa P., & Law, Stephanie. Growth of high-quality Bi2Se3 topological insulators using (Bi1-xInx) 2Se3 buffer layers.  United States.  https://doi.org/10.1116/1.5015968

Copy to clipboard


                    Wang, Yong, Ginley, Theresa P., and Law, Stephanie. Tue .  
"Growth of high-quality Bi2Se3 topological insulators using (Bi1-xInx) 2Se3 buffer layers".  United States.  https://doi.org/10.1116/1.5015968.  https://www.osti.gov/servlets/purl/1593345.

Copy to clipboard


                    
@article{osti_1593345,

  title        = {Growth of high-quality Bi2Se3 topological insulators using (Bi1-xInx) 2Se3 buffer layers},

  author       = {Wang, Yong and Ginley, Theresa P. and Law, Stephanie},

  abstractNote = {Here, the authors first report on the optimum growth parameters for Bi1-xInx) 2Se3 alloys of arbitrary composition using molecular beam epitaxy. It is found that smooth, single-phase films can only be obtained by using a sequential growth and annealing method to seed the film, after which normal codeposition growth can be used. The topological insulator Bi2Se3 is then grown on top of various (Bi1-xInx) 2Se3 buffers and the electrical properties measured. For Bi2Se3 films grown on high-quality buffer layers, the mobility is greatly enhanced and the carrier density reduced compared to growth directly on sapphire substrates, indicating a significant improvement in film quality. The use of an almost lattice-matched trivially insulating buffer layer is therefore vital to the growth of high-quality topological insulators on arbitrary substrates.},

  doi          = {10.1116/1.5015968},

  journal      = {Journal of Vacuum Science and Technology B},

  number       = 2,

  volume       = 36,

  place        = {United States},

  year         = {Tue Jan 30 00:00:00 EST 2018},

  month        = {Tue Jan 30 00:00:00 EST 2018}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1116/1.5015968

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 16 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Works referencing / citing this record:

Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films
journal, March 2018

Morelhão, Sérgio L.; Kycia, Stefan; Netzke, Samuel
Applied Physics Letters, Vol. 112, Issue 10
DOI: 10.1063/1.5020375

Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films
preprint, January 2020

Morelhao, Sergio L.; Kycia, Stefan; Netzke, Samuel
arXiv
DOI: 10.48550/arxiv.2007.15042

Similar Records in DOE PAGES and OSTI.GOV collections:

Optimization of the Growth of the Van der Waals Materials Bi₂Se₃ and (Bi_0.5In_0.5)₂Se₃ by Molecular Beam Epitaxy

Journal Article Wang, Zhengtianye ; Law, Stephanie - Crystal Growth and Design

The naturally existing chalcogenide Bi₂Se₃ is topologically nontrivial due to the band inversion caused by the strong spin-orbit coupling inside the bulk of the material. Here, the surface states are spin polarized, protected by the time-inversion symmetry, and thus robust to the scattering caused by nonmagnetic defects. A high-purity topological insulator thin film can be easily grown via molecular beam epitaxy (MBE) on various substrates to enable novel electronics, optics, and spintronics applications. However, the unique surface state properties have historically been limited by the film quality, which is evaluated by crystallinity, surface morphology, and transport data. Here we proposemore »« less
https://doi.org/10.1021/acs.cgd.1c00663

Full Text Available
Growth and characterization of molecular beam epitaxy-grown Bi{sub 2}Te{sub 3−x}Se{sub x} topological insulator alloys

Journal Article Tung, Y. ; Chiang, Y. F. ; Chong, C. W., E-mail: cheongwei2000@yahoo.com, E-mail: jcahuang@mail.ncku.edu.tw, E-mail: makalu@nsrrc.org.tw ; ... - Journal of Applied Physics

We report a systematic study on the structural and electronic properties of Bi{sub 2}Te{sub 3−x}Se{sub x} topological insulator alloy grown by molecular beam epitaxy (MBE). A mixing ratio of Bi{sub 2}Se{sub 3} to Bi{sub 2}Te{sub 3} was controlled by varying the Bi:Te:Se flux ratio. X-ray diffraction and Raman spectroscopy measurements indicate the high crystalline quality for the as-grown Bi{sub 2}Te{sub 3−x}Se{sub x} films. Substitution of Te by Se is also revealed from both analyses. The surfaces of the films exhibit terrace-like quintuple layers and their size of the characteristic triangular terraces decreases monotonically with increasing Se content. However, the triangularmore »« less
https://doi.org/10.1063/1.4941018
Growth of ultrathin Bi₂Se₃ films by molecular beam epitaxy

Journal Article Nasir, Saadia ; Smith, Walter J. ; Beechem, Thomas E. ; ... - Journal of Vacuum Science and Technology A

Bi₂Se₃ is a widely studied 3D topological insulator having potential applications in optics, electronics, and spintronics. When the thickness of these films decreases to less than approximately 6 nm, the top and bottom surface states couple, resulting in the opening of a small gap at the Dirac point. In the 2D limit, Bi₂Se₃ may exhibit quantum spin Hall states. However, growing coalesced ultrathin Bi₂Se₃ films with a controllable thickness and typical triangular domain morphology in the few nanometer range is challenging. Here, we explore the growth of Bi₂Se₃ films having thicknesses down to 4 nm on sapphire substrates using molecularmore »« less
https://doi.org/10.1116/6.0002299

Full Text Available
High quality ultrathin Bi{sub 2}Se{sub 3} films on CaF{sub 2} and CaF{sub 2}/Si by molecular beam epitaxy with a radio frequency cracker cell

Journal Article Li, Zhang ; Dolev, Merav ; Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 ; ... - Applied Physics Letters

We report a method to fabricate high quality Bi{sub 2}Se{sub 3} thin films using molecular beam epitaxy with a radio frequency cracker cell as an atomic selenium source. With Se-to-Bi ratios close to exact stoichiometry, optimal layer-by-layer growth of high quality Bi{sub 2}Se{sub 3} thin films with smooth surfaces has been achieved on CaF{sub 2}(111) substrates and Si(111) substrates with a thin epitaxial CaF{sub 2} buffer layer (CaF{sub 2}/Si). Transport measurements show a characteristic weak-antilocalization magnetoresistance in all the films, with the emergence of a weak-localization contribution in the ultrathin film limit. Quantum oscillations, attributed to the topological surface statesmore »« less
https://doi.org/10.1063/1.4758466
Gate-tunable coherent transport in Se-capped Bi{sub 2}Se{sub 3} grown on amorphous SiO{sub 2}/Si

Journal Article Liu, Y. H. ; Chong, C. W., E-mail: cheongwei2000@yahoo.com, E-mail: jcahuang@mail.ncku.edu.tw, E-mail: smhuang@mail.nsysu.edu.tw ; Huang, S. Y. ; ... - Applied Physics Letters

A topological insulator (TI) is an exotic material that has a bulk insulating gap and metallic surface states with unique spin-momentum locking characteristics. Despite its various important applications, large scale integration of TI into MOSFET technologies and its coherent transport study are still rarely explored. Here, we report the growth of high quality Bi{sub 2}Se{sub 3} thin film on amorphous SiO{sub 2}/Si substrate using MBE. By controlling the thickness of the film at ∼7 nm and capping the as grown film in situ with a 2 nm-thick Se layer, largest electrostatic field effect is obtained and the resistance is changed by almostmore »« less
https://doi.org/10.1063/1.4926624

Similar Records

Title: Growth of high-quality Bi2Se3 topological insulators using (Bi1-xInx) 2Se3 buffer layers

Abstract

Citation Formats

Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films journal, March 2018

Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films preprint, January 2020

Title: Growth of high-quality Bi₂Se₃ topological insulators using (Bi_1-xIn_x) ₂Se₃ buffer layers

Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films
journal, March 2018

Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films
preprint, January 2020