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This content will become publicly available on January 30, 2019

Title: Growth of high-quality Bi 2 Se 3 topological insulators using (Bi 1-x In x ) 2 Se 3 buffer layers

Authors:
 [1] ;  [1] ;  [1]
  1. Department of Materials Science and Engineering, University of Delaware, 127 The Green, Room 201, Newark Delaware 19716
Publication Date:
Grant/Contract Number:
SC0016380; SC0017801
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics
Additional Journal Information:
Journal Volume: 36; Journal Issue: 2; Related Information: CHORUS Timestamp: 2018-02-15 00:15:29; Journal ID: ISSN 2166-2746
Publisher:
American Vacuum Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1418715