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Title: Growth of high-quality Bi 2 Se 3 topological insulators using (Bi 1-x In x ) 2 Se 3 buffer layers

Authors:
 [1] ;  [1] ;  [1]
  1. Department of Materials Science and Engineering, University of Delaware, 127 The Green, Room 201, Newark Delaware 19716
Publication Date:
Grant/Contract Number:
SC0016380; SC0017801
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics
Additional Journal Information:
Journal Name: Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics Journal Volume: 36 Journal Issue: 2; Journal ID: ISSN 2166-2746
Publisher:
American Vacuum Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1418715

Wang, Yong, Ginley, Theresa P., and Law, Stephanie. Growth of high-quality Bi 2 Se 3 topological insulators using (Bi 1-x In x ) 2 Se 3 buffer layers. United States: N. p., Web. doi:10.1116/1.5015968.
Wang, Yong, Ginley, Theresa P., & Law, Stephanie. Growth of high-quality Bi 2 Se 3 topological insulators using (Bi 1-x In x ) 2 Se 3 buffer layers. United States. doi:10.1116/1.5015968.
Wang, Yong, Ginley, Theresa P., and Law, Stephanie. 2018. "Growth of high-quality Bi 2 Se 3 topological insulators using (Bi 1-x In x ) 2 Se 3 buffer layers". United States. doi:10.1116/1.5015968.
@article{osti_1418715,
title = {Growth of high-quality Bi 2 Se 3 topological insulators using (Bi 1-x In x ) 2 Se 3 buffer layers},
author = {Wang, Yong and Ginley, Theresa P. and Law, Stephanie},
abstractNote = {},
doi = {10.1116/1.5015968},
journal = {Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics},
number = 2,
volume = 36,
place = {United States},
year = {2018},
month = {3}
}