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This content will become publicly available on January 30, 2019

Title: In situ annealing of III 1- x Mn x V ferromagnetic semiconductors

Authors:
 [1] ;  [2] ;  [3] ; ; ; ;  [4] ;  [3] ; ;
  1. Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556
  2. Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 and Department of Physics, Korea University, Seoul 136-701, South Korea
  3. Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 and Radiation Laboratory, University of Notre Dame, Notre Dame, Indiana 46556
  4. Department of Physics, Korea University, Seoul 136-701, South Korea
Publication Date:
Grant/Contract Number:
FC02-04ER15533
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics
Additional Journal Information:
Journal Volume: 36; Journal Issue: 2; Related Information: CHORUS Timestamp: 2018-02-15 00:15:37; Journal ID: ISSN 2166-2746
Publisher:
American Vacuum Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1418714