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Title: In situ annealing of III 1- x Mn x V ferromagnetic semiconductors

Journal Article · · Journal of Vacuum Science and Technology B
DOI: https://doi.org/10.1116/1.5014983 · OSTI ID:1418714
 [1];  [2];  [3]; ; ; ;  [4];  [3]; ;
  1. Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556
  2. Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 and Department of Physics, Korea University, Seoul 136-701, South Korea
  3. Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 and Radiation Laboratory, University of Notre Dame, Notre Dame, Indiana 46556
  4. Department of Physics, Korea University, Seoul 136-701, South Korea

Sponsoring Organization:
USDOE
Grant/Contract Number:
FC02-04ER15533
OSTI ID:
1418714
Journal Information:
Journal of Vacuum Science and Technology B, Journal Name: Journal of Vacuum Science and Technology B Vol. 36 Journal Issue: 2; ISSN 2166-2746
Publisher:
American Vacuum SocietyCopyright Statement
Country of Publication:
United States
Language:
English

References (15)

Effect of low-temperature annealing on the electronic- and band-structures of (Ga,Mn)As epitaxial layers journal January 2014
A ten-year perspective on dilute magnetic semiconductors and oxides journal November 2010
Regrowth of diluted magnetic semiconductor GaMnAs on InGaP (001) surfaces to realize freestanding micromechanical structures journal March 2007
Thermal diffusion of Mn through GaAs overlayers on (Ga, Mn)As journal February 2011
Postgrowth annealing of (Ga,Mn) As under As capping: An alternative way to increase TC journal March 2005
Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films journal April 2003
Effect of Mn interstitials on the lattice parameter of Ga1−xMnxAs journal January 2004
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors journal February 2000
Effect of low-temperature annealing on (Ga,Mn)As trilayer structures journal May 2003
Magnetic anisotropy of quaternary GaMnAsP ferromagnetic semiconductor journal May 2017
Effect of low-temperature annealing on transport and magnetism of diluted magnetic semiconductor (Ga, Mn)As journal March 2001
Theory of ferromagnetic (III,Mn)V semiconductors journal August 2006
Transport and Magnetic Properties of Low Temperature Annealed Ga1-xMnxAs journal October 2002
Effect of additional nonmagnetic acceptor doping on the resistivity peak and the Curie temperature of Ga1−xMnxAs epitaxial layers journal February 2003
Effects of annealing time on defect-controlled ferromagnetism in Ga1−xMnxAs journal September 2001