In situ annealing of III 1- x Mn x V ferromagnetic semiconductors

Liu, Xinyu; Bac, Seul-Ki; Sapkota, Pitambar; Gorsak, Cameron; Li, Xiang; Dong, Sining; Lee, Sanghoon; Ptasinska, Sylwia; Furdyna, Jacek K.; Dobrowolska, Margaret

doi:10.1116/1.5014983

Title: In situ annealing of III _1- _x Mn _x V ferromagnetic semiconductors

Journal Article · 28 February 2018 · Journal of Vacuum Science and Technology B

DOI: https://doi.org/10.1116/1.5014983 · OSTI ID:1418714

Liu, Xinyu ^[1]; Bac, Seul-Ki ^[2]; Sapkota, Pitambar ^[3]; Gorsak, Cameron; Li, Xiang; Dong, Sining; Lee, Sanghoon ^[4]; Ptasinska, Sylwia ^[3]; Furdyna, Jacek K.; Dobrowolska, Margaret

Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556
Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 and Department of Physics, Korea University, Seoul 136-701, South Korea
Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 and Radiation Laboratory, University of Notre Dame, Notre Dame, Indiana 46556
Department of Physics, Korea University, Seoul 136-701, South Korea

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Sponsoring Organization:: USDOE

Grant/Contract Number:: FC02-04ER15533

OSTI ID:: 1418714

Journal Information:: Journal of Vacuum Science and Technology B, Journal Name: Journal of Vacuum Science and Technology B Journal Issue: 2 Vol. 36; ISSN 2166-2746

Publisher:: American Vacuum SocietyCopyright Statement

Country of Publication:: United States

Language:: English

References (17)

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Effects of annealing time on defect-controlled ferromagnetism in Ga1−xMnxAs Potashnik, S. J.; Ku, K. C.; Chun, S. H. Applied Physics Letters, Vol. 79, Issue 10 https://doi.org/10.1063/1.1398619	journal	September 2001
Effect of additional nonmagnetic acceptor doping on the resistivity peak and the Curie temperature of Ga1−xMnxAs epitaxial layers Yuldashev, Sh. U.; Im, Hyunsik; Yalishev, V. Sh. Applied Physics Letters, Vol. 82, Issue 8 https://doi.org/10.1063/1.1554482	journal	February 2003
Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films Sørensen, B. S.; Lindelof, P. E.; Sadowski, J. Applied Physics Letters, Vol. 82, Issue 14 https://doi.org/10.1063/1.1566097	journal	April 2003
Effect of low-temperature annealing on (Ga,Mn)As trilayer structures Chiba, D.; Takamura, K.; Matsukura, F. Applied Physics Letters, Vol. 82, Issue 18 https://doi.org/10.1063/1.1571666	journal	May 2003
Effect of Mn interstitials on the lattice parameter of Ga1−xMnxAs Kuryliszyn-Kudelska, I.; Domagała, J. Z.; Wojtowicz, T. Journal of Applied Physics, Vol. 95, Issue 2 https://doi.org/10.1063/1.1634390	journal	January 2004
Postgrowth annealing of (Ga,Mn) As under As capping: An alternative way to increase TC Adell, M.; Ilver, L.; Kanski, J. Applied Physics Letters, Vol. 86, Issue 11 https://doi.org/10.1063/1.1875746	journal	March 2005
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Effect of low-temperature annealing on the electronic- and band-structures of (Ga,Mn)As epitaxial layers Yastrubchak, O.; Wosinski, T.; Gluba, L. Journal of Applied Physics, Vol. 115, Issue 1 https://doi.org/10.1063/1.4838036	journal	January 2014
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Effect of the location of Mn sites in ferromagnetic Ga 1 − x Mn x As on its Curie temperature Yu, K. M.; Walukiewicz, W.; Wojtowicz, T. Physical Review B, Vol. 65, Issue 20 https://doi.org/10.1103/PhysRevB.65.201303	journal	April 2002
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Theory of ferromagnetic (III,Mn)V semiconductors Jungwirth, T.; Sinova, Jairo; Mašek, J. Reviews of Modern Physics, Vol. 78, Issue 3 https://doi.org/10.1103/RevModPhys.78.809	journal	August 2006
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