Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface
Abstract
The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optical addressability at near-telecom wavelengths. Nonetheless, a high-fidelity spin-photon interface, which is a crucial prerequisite for such technologies, has not yet been demonstrated. Here, we demonstrate that such an interface exists in isolated divacancies in epitaxial films of 3C-SiC and 4H-SiC. Our data show that divacancies in 4H-SiC have minimal undesirable spin mixing, and that the optical linewidths in our current sample are already similar to those of recent remote entanglement demonstrations in other systems. Moreover, we find that 3C-SiC divacancies have a millisecond Hahn-echo spin coherence time, which is among the longest measured in a naturally isotopic solid. The presence of defects with these properties in a commercial semiconductor that can be heteroepitaxially grown as a thin film on Si shows promise for future quantum networks based on SiC defects.
- Authors:
- Publication Date:
- Research Org.:
- Univ. of Chicago, IL (United States); Linköping Univ. (Sweden); National Inst. for Quantum and Radiological Science and Technology, Takasaki (Japan)
- Sponsoring Org.:
- USDOE Laboratory Directed Research and Development (LDRD) Program; US Army Research Office (ARO); US Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF); Swedish Research Council (SRC); ÅForsk Foundation (Sweden); Carl-Trygger Foundation for Scientific Research (Sweden); Knut and Alice Wallenberg Foundation (Sweden); Swedish Energy Agency; Japan Society for the Promotion of Science (JSPS)
- OSTI Identifier:
- 1366341
- Alternate Identifier(s):
- OSTI ID: 1418623
- Grant/Contract Number:
- W911NF-15-2-0058; FA9550-15-1-0029; FA9550-14-1-0231; DMR-1420709; 621-2014-5825; 2016-04068; 16-576; CTS 15:339; KAW 2013.0300; 43611-1; 26286047
- Resource Type:
- Published Article
- Journal Name:
- Physical Review. X
- Additional Journal Information:
- Journal Name: Physical Review. X Journal Volume: 7 Journal Issue: 2; Journal ID: ISSN 2160-3308
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; color centers; defects; quantum control; quantum information with solid state qubits; spintronics
Citation Formats
Christle, David J., Klimov, Paul V., de las Casas, Charles F., Szász, Krisztián, Ivády, Viktor, Jokubavicius, Valdas, Ul Hassan, Jawad, Syväjärvi, Mikael, Koehl, William F., Ohshima, Takeshi, Son, Nguyen T., Janzén, Erik, Gali, Ádám, and Awschalom, David D. Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface. United States: N. p., 2017.
Web. doi:10.1103/PhysRevX.7.021046.
Christle, David J., Klimov, Paul V., de las Casas, Charles F., Szász, Krisztián, Ivády, Viktor, Jokubavicius, Valdas, Ul Hassan, Jawad, Syväjärvi, Mikael, Koehl, William F., Ohshima, Takeshi, Son, Nguyen T., Janzén, Erik, Gali, Ádám, & Awschalom, David D. Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface. United States. https://doi.org/10.1103/PhysRevX.7.021046
Christle, David J., Klimov, Paul V., de las Casas, Charles F., Szász, Krisztián, Ivády, Viktor, Jokubavicius, Valdas, Ul Hassan, Jawad, Syväjärvi, Mikael, Koehl, William F., Ohshima, Takeshi, Son, Nguyen T., Janzén, Erik, Gali, Ádám, and Awschalom, David D. Fri .
"Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface". United States. https://doi.org/10.1103/PhysRevX.7.021046.
@article{osti_1366341,
title = {Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface},
author = {Christle, David J. and Klimov, Paul V. and de las Casas, Charles F. and Szász, Krisztián and Ivády, Viktor and Jokubavicius, Valdas and Ul Hassan, Jawad and Syväjärvi, Mikael and Koehl, William F. and Ohshima, Takeshi and Son, Nguyen T. and Janzén, Erik and Gali, Ádám and Awschalom, David D.},
abstractNote = {The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optical addressability at near-telecom wavelengths. Nonetheless, a high-fidelity spin-photon interface, which is a crucial prerequisite for such technologies, has not yet been demonstrated. Here, we demonstrate that such an interface exists in isolated divacancies in epitaxial films of 3C-SiC and 4H-SiC. Our data show that divacancies in 4H-SiC have minimal undesirable spin mixing, and that the optical linewidths in our current sample are already similar to those of recent remote entanglement demonstrations in other systems. Moreover, we find that 3C-SiC divacancies have a millisecond Hahn-echo spin coherence time, which is among the longest measured in a naturally isotopic solid. The presence of defects with these properties in a commercial semiconductor that can be heteroepitaxially grown as a thin film on Si shows promise for future quantum networks based on SiC defects.},
doi = {10.1103/PhysRevX.7.021046},
journal = {Physical Review. X},
number = 2,
volume = 7,
place = {United States},
year = {Fri Jun 23 00:00:00 EDT 2017},
month = {Fri Jun 23 00:00:00 EDT 2017}
}
https://doi.org/10.1103/PhysRevX.7.021046
Web of Science
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