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Title: Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe 2

Abstract

Recent experimental advances in atomically thin transition metal dichalcogenide (TMD) metals have unveiled a range of interesting phenomena including the coexistence of charge-density-wave (CDW) order and superconductivity down to the monolayer limit. The atomic thickness of two-dimensional (2D) TMD metals also opens up the possibility for control of these electronic phase transitions by electrostatic gating. We demonstrate reversible tuning of superconductivity and CDW order in model 2D TMD metal NbSe 2 by an ionic liquid gate. A variation up to ~ 50 % in the superconducting transition temperature has been observed. Both superconductivity and CDW order can be strengthened (weakened) by increasing (reducing) the carrier density in 2D NbSe 2 . The doping dependence of these phase transitions can be understood as driven by a varying electron-phonon coupling strength induced by the gate-modulated carrier density and the electronic density of states near the Fermi surface.

Authors:
 [1];  [2];  [2];  [1];  [1]
  1. Pennsylvania State Univ., University Park, PA (United States). Dept. of Physics. Center for 2-Dimensional and Layered Materials
  2. Swiss Federal Inst. of Technology in Lausanne (EPFL) (Switzerland). Inst. of Condensed Matter Physics
Publication Date:
Research Org.:
Pennsylvania State Univ., University Park, PA (United States); Swiss Federal Inst. of Technology in Lausanne (EPFL) (Switzerland)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR); Swiss National Science Foundation (SNSF)
OSTI Identifier:
1418619
Alternate Identifier(s):
OSTI ID: 1310836
Grant/Contract Number:  
SC0012635; SC0013883; DMR-1645901; DMR-1410407; FA9550-16-1-0249
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 117; Journal Issue: 10; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; charge density waves; magnetotransport; 2-dimensional systems; transition-metal dichalcogenide

Citation Formats

Xi, Xiaoxiang, Berger, Helmuth, Forró, László, Shan, Jie, and Mak, Kin Fai. Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe2. United States: N. p., 2016. Web. doi:10.1103/PhysRevLett.117.106801.
Xi, Xiaoxiang, Berger, Helmuth, Forró, László, Shan, Jie, & Mak, Kin Fai. Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe2. United States. doi:10.1103/PhysRevLett.117.106801.
Xi, Xiaoxiang, Berger, Helmuth, Forró, László, Shan, Jie, and Mak, Kin Fai. Mon . "Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe2". United States. doi:10.1103/PhysRevLett.117.106801. https://www.osti.gov/servlets/purl/1418619.
@article{osti_1418619,
title = {Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe2},
author = {Xi, Xiaoxiang and Berger, Helmuth and Forró, László and Shan, Jie and Mak, Kin Fai},
abstractNote = {Recent experimental advances in atomically thin transition metal dichalcogenide (TMD) metals have unveiled a range of interesting phenomena including the coexistence of charge-density-wave (CDW) order and superconductivity down to the monolayer limit. The atomic thickness of two-dimensional (2D) TMD metals also opens up the possibility for control of these electronic phase transitions by electrostatic gating. We demonstrate reversible tuning of superconductivity and CDW order in model 2D TMD metal NbSe2 by an ionic liquid gate. A variation up to ~50% in the superconducting transition temperature has been observed. Both superconductivity and CDW order can be strengthened (weakened) by increasing (reducing) the carrier density in 2D NbSe2. The doping dependence of these phase transitions can be understood as driven by a varying electron-phonon coupling strength induced by the gate-modulated carrier density and the electronic density of states near the Fermi surface.},
doi = {10.1103/PhysRevLett.117.106801},
journal = {Physical Review Letters},
number = 10,
volume = 117,
place = {United States},
year = {2016},
month = {8}
}

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Cited by: 12 works
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