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Title: Transport through an impurity tunnel coupled to a Si/SiGe quantum dot

Abstract

Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here, we report the characterization of a quantum dot coupled to a localized electronic state and present evidence of controllable coupling between the quantum dot and the localized state. A set of measurements of transport through the device enable the determination that the most likely location of the localized state is consistent with a location in the quantum well near the edge of the quantum dot. Furthermore our results are consistent with a gate-voltage controllable tunnel coupling, which is an important building block for hybrid donor and gate-defined quantum dot devices.

Authors:
ORCiD logo [1];  [1]; ORCiD logo [2];  [3];  [3];  [1];  [1]; ORCiD logo [4];  [1];  [1];  [1]
+ Show Author Affiliations
  1. Univ. of Wisconsin, Madison, WI (United States). Dept. of Physics
  2. Lancaster Univ. (United Kingdom). Dept. of Physics
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Computing Research
  4. Univ. Federal do Rio de Janeiro, Rio de Janeiro (Brazil). Inst. de Fisica
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
National Science Foundation (NSF); USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1418492
Alternate Identifier(s):
OSTI ID: 1512900
Report Number(s):
SAND-2015-3548J
Journal ID: ISSN 0003-6951
Grant/Contract Number:  
FG02-03ER46028; AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 10; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Foote, Ryan H., Ward, Daniel R., Prance, J. R., Gamble, John King, Nielsen, Erik, Thorgrimsson, Brandur, Savage, D. E., Saraiva, A. L., Friesen, Mark, Coppersmith, S. N., and Eriksson, M. A. Transport through an impurity tunnel coupled to a Si/SiGe quantum dot. United States: N. p., 2015. Web. doi:10.1063/1.4930909.
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Foote, Ryan H., Ward, Daniel R., Prance, J. R., Gamble, John King, Nielsen, Erik, Thorgrimsson, Brandur, Savage, D. E., Saraiva, A. L., Friesen, Mark, Coppersmith, S. N., & Eriksson, M. A. Transport through an impurity tunnel coupled to a Si/SiGe quantum dot. United States. https://doi.org/10.1063/1.4930909
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Foote, Ryan H., Ward, Daniel R., Prance, J. R., Gamble, John King, Nielsen, Erik, Thorgrimsson, Brandur, Savage, D. E., Saraiva, A. L., Friesen, Mark, Coppersmith, S. N., and Eriksson, M. A. Fri . "Transport through an impurity tunnel coupled to a Si/SiGe quantum dot". United States. https://doi.org/10.1063/1.4930909. https://www.osti.gov/servlets/purl/1418492.
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@article{osti_1418492,
title = {Transport through an impurity tunnel coupled to a Si/SiGe quantum dot},
author = {Foote, Ryan H. and Ward, Daniel R. and Prance, J. R. and Gamble, John King and Nielsen, Erik and Thorgrimsson, Brandur and Savage, D. E. and Saraiva, A. L. and Friesen, Mark and Coppersmith, S. N. and Eriksson, M. A.},
abstractNote = {Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here, we report the characterization of a quantum dot coupled to a localized electronic state and present evidence of controllable coupling between the quantum dot and the localized state. A set of measurements of transport through the device enable the determination that the most likely location of the localized state is consistent with a location in the quantum well near the edge of the quantum dot. Furthermore our results are consistent with a gate-voltage controllable tunnel coupling, which is an important building block for hybrid donor and gate-defined quantum dot devices.},
doi = {10.1063/1.4930909},
journal = {Applied Physics Letters},
number = 10,
volume = 107,
place = {United States},
year = {Fri Sep 11 00:00:00 EDT 2015},
month = {Fri Sep 11 00:00:00 EDT 2015}
}
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Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1063/1.4930909
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Cited by: 12 works
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Figures / Tables:

FIG. 1 FIG. 1: Device design and characterization data of a quantum dot, revealing evidence of a nearby localized state. (a) Schematic diagram showing a side view of the device. Substrate is a Si/Si0.68Ge0.32 heterostructure with a 10 nm silicon well (light grey) and 32 nm SiGe offset (dark grey). Both themore » upper (purple and red) and lower (green) layers of gates are 2 nm titanium and 20 nm gold deposited by electron beam evaporation. The lower gates were deposited on 10 nm of atomic layer depostion (ALD) grown aluminum oxide (light orange) while the upper gates were on 90 nm of oxide. Ohmic contacts S and D (denoted with ☒ symbols) are 5 nm titanium and 40 nm gold on a region of the heterostructure degenerately doped with phosphorus through the quantum well (black dashed boxes). Approximate location of the quantum dot and impurity are shown schematically in the center of the figure (yellow dashed oval). (b) Scanning electron micrograph of a completed device identical to the measured device. Upper gate A (shown in purple) and paddle gate P (shown in red) were positively biased to accumulate a 2DEG in the reservoir and to control the energy of the dot, respectively. On the lower level, gates G1, G2, and QPC (shown in yellow) were negatively biased to provide the dot confinement potential, whereas gates B1 and B2 (shown in green) controlled the tunnel barriers to the source (S) and drain (D) ohmic contacts (shown schematically as X'd boxes). (c) The derivative dISD/dVSD of the transport current with respect to the gate voltage VG2. Multiple Coulomb diamonds are observed. Near the center of the plot, a sharp resonance (indicated by arrows) is observed, suggesting a localized state. (d) The current ISD at fixed VSD = 100 μV as a function of VP and VG2, showing many charge transitions of the dot. A jump in gate voltage of the location of the Coulomb blockade transitions is observed (indicated by arrows), corresponding to the localized state in (c).« less
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