skip to main content

DOE PAGESDOE PAGES

This content will become publicly available on January 29, 2019

Title: p-type doping efficiency in CdTe: Influence of second phase formation

Authors:
 [1] ;  [1] ;  [2] ; ORCiD logo [3] ;  [3] ; ORCiD logo [1]
  1. Center for Materials Research, Washington State University, Pullman, Washington 99164, USA
  2. National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
  3. Colorado School of Mines, Golden, Colorado 80401, USA
Publication Date:
Grant/Contract Number:
AC36-08-GO28; EE0007537
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 123 Journal Issue: 16; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1418400

McCoy, Jedidiah J., Swain, Santosh K., Sieber, John R., Diercks, David R., Gorman, Brian P., and Lynn, Kelvin G.. p-type doping efficiency in CdTe: Influence of second phase formation. United States: N. p., Web. doi:10.1063/1.5002144.
McCoy, Jedidiah J., Swain, Santosh K., Sieber, John R., Diercks, David R., Gorman, Brian P., & Lynn, Kelvin G.. p-type doping efficiency in CdTe: Influence of second phase formation. United States. doi:10.1063/1.5002144.
McCoy, Jedidiah J., Swain, Santosh K., Sieber, John R., Diercks, David R., Gorman, Brian P., and Lynn, Kelvin G.. 2018. "p-type doping efficiency in CdTe: Influence of second phase formation". United States. doi:10.1063/1.5002144.
@article{osti_1418400,
title = {p-type doping efficiency in CdTe: Influence of second phase formation},
author = {McCoy, Jedidiah J. and Swain, Santosh K. and Sieber, John R. and Diercks, David R. and Gorman, Brian P. and Lynn, Kelvin G.},
abstractNote = {},
doi = {10.1063/1.5002144},
journal = {Journal of Applied Physics},
number = 16,
volume = 123,
place = {United States},
year = {2018},
month = {4}
}

Works referenced in this record:

Dependence of the Minority-Carrier Lifetime on the Stoichiometry of CdTe Using Time-Resolved Photoluminescence and First-Principles Calculations
journal, August 2013