Al+Si Interface Optical Properties Obtained in the Si Solar Cell Configuration

doi:10.1002/pssa.201700480

Title: Al+Si Interface Optical Properties Obtained in the Si Solar Cell Configuration

Abstract

Al is a commonly used material for rear side metallization in commercial silicon (Si) wafer solar cells. In this study, through-the-silicon spectroscopic ellipsometry is used in a test sample to measure Al+Si interface optical properties like those in Si wafer solar cells. Two different spectroscopic ellipsometers are used for measurement of Al+Si interface optical properties over the 1128-2500 nm wavelength range. For validation, the measured interface optical properties are used in a ray tracing simulation over the 300-2500 nm wavelength range for an encapsulated Si solar cell having random pyramidal texture. The ray tracing model matches well with the measured total reflectance at normal incidence of a commercially available Si module. The Al+Si optical properties presented here enable quantitative assessment of major irradiance/current flux losses arising from reflection and parasitic absorption in encapsulated Si solar cells.

Authors:

^[1]; Silverman, Timothy J. ^[2]; Deceglie, Michael G. ^[2]; Podraza, Nikolas J. ^[1]

Univ. of Toledo, OH (United States). Wright Center for Photovoltaics Innovation and Commercialization (PVIC)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

Publication Date:: 2017-10-18

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)

OSTI Identifier:: 1418122

Alternate Identifier(s):: OSTI ID: 1400003

Report Number(s):: NREL/JA-5J00-68655
Journal ID: ISSN 1862-6300

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: Physica Status Solidi. A, Applications and Materials Science

Additional Journal Information:: Journal Volume: 214; Journal Issue: 12; Journal ID: ISSN 1862-6300

Publisher:: Wiley

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; aluminum; interfaces; optical properties; silicon; solar cells; spectroscopic ellipsometry

Citation Formats


                    Subedi, Indra, Silverman, Timothy J., Deceglie, Michael G., and Podraza, Nikolas J. Al+Si Interface Optical Properties Obtained in the Si Solar Cell Configuration.  United States: N. p., 2017. 
        Web.  doi:10.1002/pssa.201700480.

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                    Subedi, Indra, Silverman, Timothy J., Deceglie, Michael G., & Podraza, Nikolas J. Al+Si Interface Optical Properties Obtained in the Si Solar Cell Configuration.  United States.  doi:10.1002/pssa.201700480.

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                    Subedi, Indra, Silverman, Timothy J., Deceglie, Michael G., and Podraza, Nikolas J. Wed .  
        "Al+Si Interface Optical Properties Obtained in the Si Solar Cell Configuration".  United States.  doi:10.1002/pssa.201700480.  https://www.osti.gov/servlets/purl/1418122.

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@article{osti_1418122,

  title        = {Al+Si Interface Optical Properties Obtained in the Si Solar Cell Configuration},

  author       = {Subedi, Indra and Silverman, Timothy J. and Deceglie, Michael G. and Podraza, Nikolas J.},

  abstractNote = {Al is a commonly used material for rear side metallization in commercial silicon (Si) wafer solar cells. In this study, through-the-silicon spectroscopic ellipsometry is used in a test sample to measure Al+Si interface optical properties like those in Si wafer solar cells. Two different spectroscopic ellipsometers are used for measurement of Al+Si interface optical properties over the 1128-2500 nm wavelength range. For validation, the measured interface optical properties are used in a ray tracing simulation over the 300-2500 nm wavelength range for an encapsulated Si solar cell having random pyramidal texture. The ray tracing model matches well with the measured total reflectance at normal incidence of a commercially available Si module. The Al+Si optical properties presented here enable quantitative assessment of major irradiance/current flux losses arising from reflection and parasitic absorption in encapsulated Si solar cells.},

  doi          = {10.1002/pssa.201700480},

  journal      = {Physica Status Solidi. A, Applications and Materials Science},

  number       = 12,

  volume       = 214,

  place        = {United States},

  year         = {2017},

  month        = {10}

}

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DOI: 10.1002/pssa.201700480

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Works referenced in this record:

Optical properties of metallic films for vertical-cavity optoelectronic devices
journal, January 1998

Rakić, Aleksandar D.; Djurišić, Aleksandra B.; Elazar, Jovan M.
Applied Optics, Vol. 37, Issue 22, p. 5271-5283
DOI: 10.1364/AO.37.005271

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