Al+Si Interface Optical Properties Obtained in the Si Solar Cell Configuration
Abstract
Al is a commonly used material for rear side metallization in commercial silicon (Si) wafer solar cells. In this study, through-the-silicon spectroscopic ellipsometry is used in a test sample to measure Al+Si interface optical properties like those in Si wafer solar cells. Two different spectroscopic ellipsometers are used for measurement of Al+Si interface optical properties over the 1128-2500 nm wavelength range. For validation, the measured interface optical properties are used in a ray tracing simulation over the 300-2500 nm wavelength range for an encapsulated Si solar cell having random pyramidal texture. The ray tracing model matches well with the measured total reflectance at normal incidence of a commercially available Si module. The Al+Si optical properties presented here enable quantitative assessment of major irradiance/current flux losses arising from reflection and parasitic absorption in encapsulated Si solar cells.
- Authors:
-
[1];
- Univ. of Toledo, OH (United States). Wright Center for Photovoltaics Innovation and Commercialization (PVIC)
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Publication Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- OSTI Identifier:
- 1418122
- Alternate Identifier(s):
- OSTI ID: 1400003
- Report Number(s):
- NREL/JA-5J00-68655
Journal ID: ISSN 1862-6300
- Grant/Contract Number:
- AC36-08GO28308; DE‐AC36‐08GO28308
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physica Status Solidi. A, Applications and Materials Science
- Additional Journal Information:
- Journal Volume: 214; Journal Issue: 12; Journal ID: ISSN 1862-6300
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; aluminum; interfaces; optical properties; silicon; solar cells; spectroscopic ellipsometry
Citation Formats
Subedi, Indra, Silverman, Timothy J., Deceglie, Michael G., and Podraza, Nikolas J. Al+Si Interface Optical Properties Obtained in the Si Solar Cell Configuration. United States: N. p., 2017.
Web. doi:10.1002/pssa.201700480.
Subedi, Indra, Silverman, Timothy J., Deceglie, Michael G., & Podraza, Nikolas J. Al+Si Interface Optical Properties Obtained in the Si Solar Cell Configuration. United States. https://doi.org/10.1002/pssa.201700480
Subedi, Indra, Silverman, Timothy J., Deceglie, Michael G., and Podraza, Nikolas J. Wed .
"Al+Si Interface Optical Properties Obtained in the Si Solar Cell Configuration". United States. https://doi.org/10.1002/pssa.201700480. https://www.osti.gov/servlets/purl/1418122.
@article{osti_1418122,
title = {Al+Si Interface Optical Properties Obtained in the Si Solar Cell Configuration},
author = {Subedi, Indra and Silverman, Timothy J. and Deceglie, Michael G. and Podraza, Nikolas J.},
abstractNote = {Al is a commonly used material for rear side metallization in commercial silicon (Si) wafer solar cells. In this study, through-the-silicon spectroscopic ellipsometry is used in a test sample to measure Al+Si interface optical properties like those in Si wafer solar cells. Two different spectroscopic ellipsometers are used for measurement of Al+Si interface optical properties over the 1128-2500 nm wavelength range. For validation, the measured interface optical properties are used in a ray tracing simulation over the 300-2500 nm wavelength range for an encapsulated Si solar cell having random pyramidal texture. The ray tracing model matches well with the measured total reflectance at normal incidence of a commercially available Si module. The Al+Si optical properties presented here enable quantitative assessment of major irradiance/current flux losses arising from reflection and parasitic absorption in encapsulated Si solar cells.},
doi = {10.1002/pssa.201700480},
journal = {Physica Status Solidi. A, Applications and Materials Science},
number = 12,
volume = 214,
place = {United States},
year = {2017},
month = {10}
}
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Works referencing / citing this record:
Photogenerated Carrier Transport Properties in Silicon Photovoltaics
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