skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Quasi-two-dimensional thermoelectricity in SnSe

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1417936
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 97 Journal Issue: 4; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Tayari, V., Senkovskiy, B. V., Rybkovskiy, D., Ehlen, N., Fedorov, A., Chen, C. -Y., Avila, J., Asensio, M., Perucchi, A., di Pietro, P., Yashina, L., Fakih, I., Hemsworth, N., Petrescu, M., Gervais, G., Grüneis, A., and Szkopek, T. Quasi-two-dimensional thermoelectricity in SnSe. United States: N. p., 2018. Web. doi:10.1103/PhysRevB.97.045424.
Tayari, V., Senkovskiy, B. V., Rybkovskiy, D., Ehlen, N., Fedorov, A., Chen, C. -Y., Avila, J., Asensio, M., Perucchi, A., di Pietro, P., Yashina, L., Fakih, I., Hemsworth, N., Petrescu, M., Gervais, G., Grüneis, A., & Szkopek, T. Quasi-two-dimensional thermoelectricity in SnSe. United States. doi:10.1103/PhysRevB.97.045424.
Tayari, V., Senkovskiy, B. V., Rybkovskiy, D., Ehlen, N., Fedorov, A., Chen, C. -Y., Avila, J., Asensio, M., Perucchi, A., di Pietro, P., Yashina, L., Fakih, I., Hemsworth, N., Petrescu, M., Gervais, G., Grüneis, A., and Szkopek, T. Wed . "Quasi-two-dimensional thermoelectricity in SnSe". United States. doi:10.1103/PhysRevB.97.045424.
@article{osti_1417936,
title = {Quasi-two-dimensional thermoelectricity in SnSe},
author = {Tayari, V. and Senkovskiy, B. V. and Rybkovskiy, D. and Ehlen, N. and Fedorov, A. and Chen, C. -Y. and Avila, J. and Asensio, M. and Perucchi, A. and di Pietro, P. and Yashina, L. and Fakih, I. and Hemsworth, N. and Petrescu, M. and Gervais, G. and Grüneis, A. and Szkopek, T.},
abstractNote = {},
doi = {10.1103/PhysRevB.97.045424},
journal = {Physical Review B},
number = 4,
volume = 97,
place = {United States},
year = {2018},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.97.045424

Citation Metrics:
Cited by: 7 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

The thermoelectric performance of anisotropic SnSe doped with Na
journal, January 2016

  • Leng, Hua-Qian; Zhou, Min; Zhao, Jie
  • RSC Advances, Vol. 6, Issue 11
  • DOI: 10.1039/C5RA19469E

Generalized Gradient Approximation Made Simple
journal, October 1996

  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865

Effect of quantum-well structures on the thermoelectric figure of merit
journal, May 1993


Thermoelectric properties of p-type polycrystalline SnSe doped with Ag
journal, January 2014

  • Chen, Cheng-Lung; Wang, Heng; Chen, Yang-Yuan
  • Journal of Materials Chemistry A, Vol. 2, Issue 29, p. 11171-11176
  • DOI: 10.1039/C4TA01643B

Refinement of the structures of GeS, GeSe, SnS and SnSe
journal, January 1978


Growth and electronic properties of the SnSe semiconductor
journal, August 1981


Semiconducting black phosphorus
journal, April 1986

  • Morita, A.
  • Applied Physics A Solids and Surfaces, Vol. 39, Issue 4
  • DOI: 10.1007/BF00617267

On the Bridgman growth of lead–tin selenide crystals with uniform tin distribution
journal, June 2009


Controlled synthesis of single-crystal SnSe nanoplates
journal, January 2015


Benefits of Carrier-Pocket Anisotropy to Thermoelectric Performance: The Case of p -Type AgBiSe 2
journal, June 2015


First NanoARPES User Facility Available at SOLEIL: An Innovative and Powerful Tool for Studying Advanced Materials
journal, March 2014


Complex thermoelectric materials
journal, February 2008

  • Snyder, G. Jeffrey; Toberer, Eric S.
  • Nature Materials, Vol. 7, Issue 2, p. 105-114
  • DOI: 10.1038/nmat2090

Performance of SISSI, the infrared beamline of the ELETTRA storage ring
journal, January 2007

  • Lupi, Stefano; Nucara, Alessandro; Perucchi, Andrea
  • Journal of the Optical Society of America B, Vol. 24, Issue 4
  • DOI: 10.1364/JOSAB.24.000959

Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics
journal, July 2014

  • Xia, Fengnian; Wang, Han; Jia, Yichen
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms5458

Orbitally driven giant phonon anharmonicity in SnSe
journal, October 2015

  • Li, C. W.; Hong, J.; May, A. F.
  • Nature Physics, Vol. 11, Issue 12
  • DOI: 10.1038/nphys3492

Recent developments in the ABINIT software package
journal, August 2016


Black Phosphorus: Narrow Gap, Wide Applications
journal, October 2015


Unexpected Large Hole Effective Masses in SnSe Revealed by Angle-Resolved Photoemission Spectroscopy
journal, September 2017


High-mobility ultrathin semiconducting films prepared by spin coating
journal, March 2004

  • Mitzi, David B.; Kosbar, Laura L.; Murray, Conal E.
  • Nature, Vol. 428, Issue 6980, p. 299-303
  • DOI: 10.1038/nature02389

Growth and characterization of SnSe and SnSe2 single crystals
journal, July 1989


Record Seebeck coefficient and extremely low thermal conductivity in nanostructured SnSe
journal, February 2015

  • Serrano-Sánchez, F.; Gharsallah, M.; Nemes, N. M.
  • Applied Physics Letters, Vol. 106, Issue 8
  • DOI: 10.1063/1.4913260

SnSe single crystals: Sublimation growth, deviation from stoichiometry and electrical properties
journal, November 1977

  • Maier, H.; Daniel, D. R.
  • Journal of Electronic Materials, Vol. 6, Issue 6
  • DOI: 10.1007/BF02660344

Epitaxy of Ultrathin SnSe Single Crystals on Polydimethylsiloxane: In-Plane Electrical Anisotropy and Gate-Tunable Thermopower
journal, October 2016

  • Pei, Tengfei; Bao, Lihong; Ma, Ruisong
  • Advanced Electronic Materials, Vol. 2, Issue 11
  • DOI: 10.1002/aelm.201600292

Influence of dimensionality on thermoelectric device performance
journal, February 2009

  • Kim, Raseong; Datta, Supriyo; Lundstrom, Mark S.
  • Journal of Applied Physics, Vol. 105, Issue 3
  • DOI: 10.1063/1.3074347

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
journal, March 2014

  • Liu, Han; Neal, Adam T.; Zhu, Zhen
  • ACS Nano, Vol. 8, Issue 4
  • DOI: 10.1021/nn501226z

Electrical Properties of Stannous Selenide
journal, March 1959

  • Asanabe, Sizuo
  • Journal of the Physical Society of Japan, Vol. 14, Issue 3
  • DOI: 10.1143/JPSJ.14.281

Boosting the Thermoelectric Performance of (Na,K)-Codoped Polycrystalline SnSe by Synergistic Tailoring of the Band Structure and Atomic-Scale Defect Phonon Scattering
journal, July 2017

  • Ge, Zhen-Hua; Song, Dongsheng; Chong, Xiaoyu
  • Journal of the American Chemical Society, Vol. 139, Issue 28
  • DOI: 10.1021/jacs.7b05339

Infrared and Raman spectra of the IV-VI compounds SnS and SnSe
journal, February 1977


Heteroepitaxial growth of SnSe films by pulsed laser deposition using Se-rich targets
journal, November 2015

  • Inoue, Takeshi; Hiramatsu, Hidenori; Hosono, Hideo
  • Journal of Applied Physics, Vol. 118, Issue 20
  • DOI: 10.1063/1.4936202

Photoemission study of the electronic structure of valence band convergent SnSe
journal, October 2017


Zur magnetischen Widerstandsänderung reiner Metalle
journal, January 1938


Optical absorption in tin monoselenide single crystal
journal, January 1986


Thermoelectric and phonon transport properties of two-dimensional IV–VI compounds
journal, March 2017


Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals
journal, December 2016

  • Duong, Anh Tuan; Nguyen, Van Quang; Duvjir, Ganbat
  • Nature Communications, Vol. 7, Issue 1
  • DOI: 10.1038/ncomms13713

Strain effect on electronic structure and thermoelectric properties of orthorhombic SnSe: A first principles study
journal, November 2015

  • Cuong, Do Duc; Rhim, S. H.; Lee, Joo-Hyong
  • AIP Advances, Vol. 5, Issue 11
  • DOI: 10.1063/1.4936636

Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals
journal, April 2014

  • Zhao, Li-Dong; Lo, Shih-Han; Zhang, Yongsheng
  • Nature, Vol. 508, Issue 7496, p. 373-377
  • DOI: 10.1038/nature13184

Influence of temperature and pressure on the electronic transitions in SnS and SnSe semiconductors
journal, March 1990


Black phosphorus field-effect transistors
journal, March 2014


Effective Seebeck coefficient for semiconductors
journal, August 2006


Ultrahigh power factor and thermoelectric performance in hole-doped single-crystal SnSe
journal, November 2015


Large Seebeck effect in electron-doped FeAs 2 driven by a quasi-one-dimensional pudding-mold-type band
journal, August 2013


SnSe: a remarkable new thermoelectric material
journal, January 2016

  • Zhao, Li-Dong; Chang, Cheng; Tan, Gangjian
  • Energy & Environmental Science, Vol. 9, Issue 10
  • DOI: 10.1039/C6EE01755J

Multi-Layer SnSe Nanoflake Field-Effect Transistors with Low-Resistance Au Ohmic Contacts
journal, May 2017


Efficient pseudopotentials for plane-wave calculations
journal, January 1991