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This content will become publicly available on December 20, 2018

Title: Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

We propose practical six-junction (6J) inverted metamorphic multijunction (IMM) concentrator solar cell designs with the potential to exceed 50% efficiency using moderately high quality junction materials. We demonstrate the top three junctions and their monolithic integration lattice matched to GaAs using 2.1-eV AlGaInP, 1.7-eV AlGaAs or GaInAsP, and 1.4-eV GaAs with external radiative efficiencies >0.1%. We demonstrate tunnel junctions with peak tunneling current >400 A/cm 2 that are transparent to <2.1-eV light. We compare the bottom three GaInAs(p) junctions with bandgaps of 1.2, 1.0, and 0.7 eV grown on InP and transparent metamorphic grades with low dislocation densities. The solution to an integration challenge resulting from Zn diffusion in the GaAs junction is illustrated in a five-junction IMM. Excellent 1-sun performance is demonstrated in a complete 6J IMM device with VOC = 5.15 V, and a promising pathway toward >50% efficiency at high concentrations is presented.
Authors:
ORCiD logo [1] ; ORCiD logo [1] ; ORCiD logo [1] ; ORCiD logo [1] ;  [1] ; ORCiD logo [1] ; ORCiD logo [1] ; ORCiD logo [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Report Number(s):
NREL/JA-5J00-68675
Journal ID: ISSN 2156-3381
Grant/Contract Number:
AC36-08GO28308
Type:
Accepted Manuscript
Journal Name:
IEEE Journal of Photovoltaics
Additional Journal Information:
Journal Volume: 8; Journal Issue: 2; Journal ID: ISSN 2156-3381
Publisher:
IEEE
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; inverted metamorphic multijunction photovoltaics; concentrator solar cells; III-V semiconductor alloys
OSTI Identifier:
1417798