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Title: Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures

Journal Article · · Journal of Vacuum Science and Technology B
DOI: https://doi.org/10.1116/1.5013001 · OSTI ID:1417700
 [1]; ; ; ;
  1. Department of Materials Science and Engineering, North Carolina State University, 1001 Capability Drive, Raleigh, North Carolina 27695

Sponsoring Organization:
USDOE
Grant/Contract Number:
NA-22-WMS-#66204
OSTI ID:
1417700
Journal Information:
Journal of Vacuum Science and Technology B, Journal Name: Journal of Vacuum Science and Technology B Vol. 36 Journal Issue: 3; ISSN 2166-2746
Publisher:
American Vacuum SocietyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 8 works
Citation information provided by
Web of Science

References (6)

A study on strong memory effects for Mg doping in GaN metalorganic chemical vapor deposition journal December 1994
Reduction of Mg segregation in a metalorganic vapor phase epitaxial grown GaN layer by a low-temperature AlN interlayer journal July 2008
Characterization of nitride-based LED materials and devices using TOF-SIMS journal August 2014
Suppression of Mg propagation into subsequent layers grown by MOCVD journal January 2017
TOF-SIMS Analysis of InGaN/GaN for Expected Doping Profiles journal January 2012
Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition journal January 2003

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