skip to main content

DOE PAGESDOE PAGES

This content will become publicly available on January 22, 2019

Title: Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures

Authors:
 [1] ; ; ; ;
  1. Department of Materials Science and Engineering, North Carolina State University, 1001 Capability Drive, Raleigh, North Carolina 27695
Publication Date:
Grant/Contract Number:
NA-22-WMS-#66204
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics
Additional Journal Information:
Journal Name: Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics Journal Volume: 36 Journal Issue: 3; Journal ID: ISSN 2166-2746
Publisher:
American Vacuum Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1417700

Klump, Andrew, Zhou, Chuanzhen, Stevie, Frederick A., Collazo, Ramón, and Sitar, Zlatko. Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures. United States: N. p., Web. doi:10.1116/1.5013001.
Klump, Andrew, Zhou, Chuanzhen, Stevie, Frederick A., Collazo, Ramón, & Sitar, Zlatko. Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures. United States. doi:10.1116/1.5013001.
Klump, Andrew, Zhou, Chuanzhen, Stevie, Frederick A., Collazo, Ramón, and Sitar, Zlatko. 2018. "Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures". United States. doi:10.1116/1.5013001.
@article{osti_1417700,
title = {Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures},
author = {Klump, Andrew and Zhou, Chuanzhen and Stevie, Frederick A. and Collazo, Ramón and Sitar, Zlatko},
abstractNote = {},
doi = {10.1116/1.5013001},
journal = {Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics},
number = 3,
volume = 36,
place = {United States},
year = {2018},
month = {5}
}