Single-Crystal Thin Films of Cesium Lead Bromide Perovskite Epitaxially Grown on Metal Oxide Perovskite (SrTiO 3 )
Abstract
High-quality metal halide perovskite single crystals have low defect densities and excellent photophysical properties, yet thin films are the most sought after material geometry for optoelectronic devices. Perovskite single-crystal thin films (SCTFs) would be highly desirable for high-performance devices, but their growth remains challenging, particularly for inorganic metal halide perovskites. Herein, we report the facile vapor-phase epitaxial growth of cesium lead bromide perovskite (CsPbBr3) continuous SCTFs with controllable micrometer thickness, as well as nanoplate arrays, on traditional oxide perovskite SrTiO3(100) substrates. Heteroepitaxial single-crystal growth is enabled by the serendipitous incommensurate lattice match between these two perovskites, and overcoming the limitation of island-forming Volmer–Weber crystal growth is critical for growing large-area continuous thin films. Time-resolved photoluminescence, transient reflection spectroscopy, and electrical transport measurements show that the CsPbBr3 epitaxial thin film has a slow charge carrier recombination rate, low surface recombination velocity (104 cm s–1), and low defect density of 1012 cm–3, which are comparable to those of CsPbBr3 single crystals. This work suggests a general approach using oxide perovskites as substrates for heteroepitaxial growth of halide perovskites. Furthermore, the high-quality halide perovskite SCTFs epitaxially integrated with multifunctional oxide perovskites could open up opportunities for a variety of high-performance optoelectronics devices.
- Authors:
-
[1];
[2];
[2];
[2];
[4];
[3];
[2]
- Department of Chemistry, University of Wisconsin—Madison, 1101 University Avenue, Madison, Wisconsin 53706, United States, International Research Center for Renewable Energy, State Key Laboratory of Multiphase Flow in Power Engineering, Xi’an Jiaotong University, Shaanxi 710049, P. R. China
- Department of Chemistry, University of Wisconsin—Madison, 1101 University Avenue, Madison, Wisconsin 53706, United States
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronic Science, Hunan University, Changsha 410082, P. R. China
- International Research Center for Renewable Energy, State Key Laboratory of Multiphase Flow in Power Engineering, Xi’an Jiaotong University, Shaanxi 710049, P. R. China
- Publication Date:
- Research Org.:
- Univ. of Wisconsin, Madison, WI (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1390338
- Alternate Identifier(s):
- OSTI ID: 1417657
- Grant/Contract Number:
- FG02-09ER46664; SC0002162
- Resource Type:
- Published Article
- Journal Name:
- Journal of the American Chemical Society
- Additional Journal Information:
- Journal Name: Journal of the American Chemical Society Journal Volume: 139 Journal Issue: 38; Journal ID: ISSN 0002-7863
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Chen, Jie, Morrow, Darien J., Fu, Yongping, Zheng, Weihao, Zhao, Yuzhou, Dang, Lianna, Stolt, Matthew J., Kohler, Daniel D., Wang, Xiaoxia, Czech, Kyle J., Hautzinger, Matthew P., Shen, Shaohua, Guo, Liejin, Pan, Anlian, Wright, John C., and Jin, Song. Single-Crystal Thin Films of Cesium Lead Bromide Perovskite Epitaxially Grown on Metal Oxide Perovskite (SrTiO 3 ). United States: N. p., 2017.
Web. doi:10.1021/jacs.7b07506.
Chen, Jie, Morrow, Darien J., Fu, Yongping, Zheng, Weihao, Zhao, Yuzhou, Dang, Lianna, Stolt, Matthew J., Kohler, Daniel D., Wang, Xiaoxia, Czech, Kyle J., Hautzinger, Matthew P., Shen, Shaohua, Guo, Liejin, Pan, Anlian, Wright, John C., & Jin, Song. Single-Crystal Thin Films of Cesium Lead Bromide Perovskite Epitaxially Grown on Metal Oxide Perovskite (SrTiO 3 ). United States. https://doi.org/10.1021/jacs.7b07506
Chen, Jie, Morrow, Darien J., Fu, Yongping, Zheng, Weihao, Zhao, Yuzhou, Dang, Lianna, Stolt, Matthew J., Kohler, Daniel D., Wang, Xiaoxia, Czech, Kyle J., Hautzinger, Matthew P., Shen, Shaohua, Guo, Liejin, Pan, Anlian, Wright, John C., and Jin, Song. Wed .
"Single-Crystal Thin Films of Cesium Lead Bromide Perovskite Epitaxially Grown on Metal Oxide Perovskite (SrTiO 3 )". United States. https://doi.org/10.1021/jacs.7b07506.
@article{osti_1390338,
title = {Single-Crystal Thin Films of Cesium Lead Bromide Perovskite Epitaxially Grown on Metal Oxide Perovskite (SrTiO 3 )},
author = {Chen, Jie and Morrow, Darien J. and Fu, Yongping and Zheng, Weihao and Zhao, Yuzhou and Dang, Lianna and Stolt, Matthew J. and Kohler, Daniel D. and Wang, Xiaoxia and Czech, Kyle J. and Hautzinger, Matthew P. and Shen, Shaohua and Guo, Liejin and Pan, Anlian and Wright, John C. and Jin, Song},
abstractNote = {High-quality metal halide perovskite single crystals have low defect densities and excellent photophysical properties, yet thin films are the most sought after material geometry for optoelectronic devices. Perovskite single-crystal thin films (SCTFs) would be highly desirable for high-performance devices, but their growth remains challenging, particularly for inorganic metal halide perovskites. Herein, we report the facile vapor-phase epitaxial growth of cesium lead bromide perovskite (CsPbBr3) continuous SCTFs with controllable micrometer thickness, as well as nanoplate arrays, on traditional oxide perovskite SrTiO3(100) substrates. Heteroepitaxial single-crystal growth is enabled by the serendipitous incommensurate lattice match between these two perovskites, and overcoming the limitation of island-forming Volmer–Weber crystal growth is critical for growing large-area continuous thin films. Time-resolved photoluminescence, transient reflection spectroscopy, and electrical transport measurements show that the CsPbBr3 epitaxial thin film has a slow charge carrier recombination rate, low surface recombination velocity (104 cm s–1), and low defect density of 1012 cm–3, which are comparable to those of CsPbBr3 single crystals. This work suggests a general approach using oxide perovskites as substrates for heteroepitaxial growth of halide perovskites. Furthermore, the high-quality halide perovskite SCTFs epitaxially integrated with multifunctional oxide perovskites could open up opportunities for a variety of high-performance optoelectronics devices.},
doi = {10.1021/jacs.7b07506},
journal = {Journal of the American Chemical Society},
number = 38,
volume = 139,
place = {United States},
year = {Wed Sep 13 00:00:00 EDT 2017},
month = {Wed Sep 13 00:00:00 EDT 2017}
}
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https://doi.org/10.1021/jacs.7b07506
https://doi.org/10.1021/jacs.7b07506
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