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Title: Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge)

Authors:
 [1] ;  [2] ;  [2] ;  [2] ; ORCiD logo [1]
  1. Department of Materials Science and Engineering, University of Virginia, 395 McCormick Road, Charlottesville, Virginia 22901, USA
  2. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Publication Date:
Grant/Contract Number:
AC02-05CH11231
Type:
Publisher's Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Name: APL Materials Journal Volume: 6 Journal Issue: 1; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1417420

Simov, K. R., Glans, P. -A., Jenkins, C. A., Liberati, M., and Reinke, P.. Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge). United States: N. p., Web. doi:10.1063/1.4996299.
Simov, K. R., Glans, P. -A., Jenkins, C. A., Liberati, M., & Reinke, P.. Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge). United States. doi:10.1063/1.4996299.
Simov, K. R., Glans, P. -A., Jenkins, C. A., Liberati, M., and Reinke, P.. 2018. "Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge)". United States. doi:10.1063/1.4996299.
@article{osti_1417420,
title = {Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge)},
author = {Simov, K. R. and Glans, P. -A. and Jenkins, C. A. and Liberati, M. and Reinke, P.},
abstractNote = {},
doi = {10.1063/1.4996299},
journal = {APL Materials},
number = 1,
volume = 6,
place = {United States},
year = {2018},
month = {1}
}