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Title: Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN

Abstract

Using in situ grazing-incidence x-ray scattering, we have measured the diffuse scattering from islands that form during layer-by-layer growth of GaN by metal-organic vapor phase epitaxy on the (1010) m-plane surface. The diffuse scattering is extended in the (0001) in-plane direction in reciprocal space, indicating a strong anisotropy with islands elongated along [1210] and closely spaced along [0001]. This is confirmed by atomic force microscopy of a quenched sample. Islands were characterized as a function of growth rate F and temperature. The island spacing along [0001] observed during the growth of the first monolayer obeys a power-law dependence on growth rate F-n, with an exponent n = 0:25 + 0.02. The results are in agreement with recent kinetic Monte Carlo simulations, indicating that elongated islands result from the dominant anisotropy in step edge energy and not from surface diffusion anisotropy. The observed power-law exponent can be explained using a simple steady-state model, which gives n = 1/4.

Authors:
 [1]; ORCiD logo [2];  [2];  [2];  [2];  [2];  [3]; ORCiD logo [4]
  1. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Univ. of Fribourg (Switzerland). Dept. of Physics, Fribourg Center for Nanomaterials
  2. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  3. Munkholm Consulting, Mountain View, CA (United States)
  4. Northern Illinois Univ., DeKalb, IL (United States). Dept. of Physics
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1417298
Alternate Identifier(s):
OSTI ID: 1411116; OSTI ID: 1413967
Grant/Contract Number:  
AC02-76SF00515; AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 23; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Perret, Edith, Xu, Dongwei, Highland, M. J., Stephenson, G. B., Zapol, P., Fuoss, P. H., Munkholm, A., and Thompson, Carol. Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN. United States: N. p., 2017. Web. doi:10.1063/1.4993788.
Perret, Edith, Xu, Dongwei, Highland, M. J., Stephenson, G. B., Zapol, P., Fuoss, P. H., Munkholm, A., & Thompson, Carol. Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN. United States. doi:10.1063/1.4993788.
Perret, Edith, Xu, Dongwei, Highland, M. J., Stephenson, G. B., Zapol, P., Fuoss, P. H., Munkholm, A., and Thompson, Carol. Mon . "Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN". United States. doi:10.1063/1.4993788. https://www.osti.gov/servlets/purl/1417298.
@article{osti_1417298,
title = {Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN},
author = {Perret, Edith and Xu, Dongwei and Highland, M. J. and Stephenson, G. B. and Zapol, P. and Fuoss, P. H. and Munkholm, A. and Thompson, Carol},
abstractNote = {Using in situ grazing-incidence x-ray scattering, we have measured the diffuse scattering from islands that form during layer-by-layer growth of GaN by metal-organic vapor phase epitaxy on the (1010) m-plane surface. The diffuse scattering is extended in the (0001) in-plane direction in reciprocal space, indicating a strong anisotropy with islands elongated along [1210] and closely spaced along [0001]. This is confirmed by atomic force microscopy of a quenched sample. Islands were characterized as a function of growth rate F and temperature. The island spacing along [0001] observed during the growth of the first monolayer obeys a power-law dependence on growth rate F-n, with an exponent n = 0:25 + 0.02. The results are in agreement with recent kinetic Monte Carlo simulations, indicating that elongated islands result from the dominant anisotropy in step edge energy and not from surface diffusion anisotropy. The observed power-law exponent can be explained using a simple steady-state model, which gives n = 1/4.},
doi = {10.1063/1.4993788},
journal = {Applied Physics Letters},
number = 23,
volume = 111,
place = {United States},
year = {2017},
month = {12}
}

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Works referenced in this record:

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    Works referencing / citing this record:

    Coherent X-ray spectroscopy reveals the persistence of island arrangements during layer-by-layer growth
    journal, March 2019