Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN

Perret, Edith; Xu, Dongwei; Highland, M. J.; Stephenson, G. B.; Zapol, P.; Fuoss, P. H.; Munkholm, A.; Thompson, Carol

doi:10.1063/1.4993788

Title: Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN

Abstract

Using in situ grazing-incidence x-ray scattering, we have measured the diffuse scattering from islands that form during layer-by-layer growth of GaN by metal-organic vapor phase epitaxy on the (1010) m-plane surface. The diffuse scattering is extended in the (0001) in-plane direction in reciprocal space, indicating a strong anisotropy with islands elongated along [1210] and closely spaced along [0001]. This is confirmed by atomic force microscopy of a quenched sample. Islands were characterized as a function of growth rate F and temperature. The island spacing along [0001] observed during the growth of the first monolayer obeys a power-law dependence on growth rate F-n, with an exponent n = 0:25 + 0.02. The results are in agreement with recent kinetic Monte Carlo simulations, indicating that elongated islands result from the dominant anisotropy in step edge energy and not from surface diffusion anisotropy. The observed power-law exponent can be explained using a simple steady-state model, which gives n = 1/4.

Authors:

Perret, Edith ^[1];

^[2]; Highland, M. J. ^[2]; Stephenson, G. B. ^[2]; Zapol, P. ^[2]; Fuoss, P. H. ^[2]; Munkholm, A. ^[3];

^[4]

Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Univ. of Fribourg (Switzerland). Dept. of Physics, Fribourg Center for Nanomaterials
Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
Munkholm Consulting, Mountain View, CA (United States)
Northern Illinois Univ., DeKalb, IL (United States). Dept. of Physics

Publication Date:: Mon Dec 04 00:00:00 EST 2017

Research Org.:: SLAC National Accelerator Lab., Menlo Park, CA (United States); Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

OSTI Identifier:: 1417298

Alternate Identifier(s):: OSTI ID: 1411116; OSTI ID: 1413967

Grant/Contract Number:: AC02-76SF00515; AC02-06CH11357

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 111; Journal Issue: 23; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Perret, Edith, Xu, Dongwei, Highland, M. J., Stephenson, G. B., Zapol, P., Fuoss, P. H., Munkholm, A., and Thompson, Carol. Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN.  United States: N. p., 2017. 
Web.  doi:10.1063/1.4993788.

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                    Perret, Edith, Xu, Dongwei, Highland, M. J., Stephenson, G. B., Zapol, P., Fuoss, P. H., Munkholm, A., & Thompson, Carol. Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN.  United States.  https://doi.org/10.1063/1.4993788

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                    Perret, Edith, Xu, Dongwei, Highland, M. J., Stephenson, G. B., Zapol, P., Fuoss, P. H., Munkholm, A., and Thompson, Carol. Mon .  
"Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN".  United States.  https://doi.org/10.1063/1.4993788.  https://www.osti.gov/servlets/purl/1417298.

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@article{osti_1417298,

  title        = {Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN},

  author       = {Perret, Edith and Xu, Dongwei and Highland, M. J. and Stephenson, G. B. and Zapol, P. and Fuoss, P. H. and Munkholm, A. and Thompson, Carol},

  abstractNote = {Using in situ grazing-incidence x-ray scattering, we have measured the diffuse scattering from islands that form during layer-by-layer growth of GaN by metal-organic vapor phase epitaxy on the (1010) m-plane surface. The diffuse scattering is extended in the (0001) in-plane direction in reciprocal space, indicating a strong anisotropy with islands elongated along [1210] and closely spaced along [0001]. This is confirmed by atomic force microscopy of a quenched sample. Islands were characterized as a function of growth rate F and temperature. The island spacing along [0001] observed during the growth of the first monolayer obeys a power-law dependence on growth rate F-n, with an exponent n = 0:25 + 0.02. The results are in agreement with recent kinetic Monte Carlo simulations, indicating that elongated islands result from the dominant anisotropy in step edge energy and not from surface diffusion anisotropy. The observed power-law exponent can be explained using a simple steady-state model, which gives n = 1/4.},

  doi          = {10.1063/1.4993788},

  journal      = {Applied Physics Letters},

  number       = 23,

  volume       = 111,

  place        = {United States},

  year         = {Mon Dec 04 00:00:00 EST 2017},

  month        = {Mon Dec 04 00:00:00 EST 2017}

}

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Works referenced in this record:

Real-time x-ray studies of crystal growth modes during metal-organic vapor phase epitaxy of GaN on c- and m-plane single crystals
journal, August 2014

Perret, Edith; Highland, M. J.; Stephenson, G. B.
Applied Physics Letters, Vol. 105, Issue 5
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Measurements of Surface Diffusivity and Coarsening during Pulsed Laser Deposition
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Jaffe, John E.; Pandey, Ravindra; Zapol, Peter
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Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces
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Xu, Dongwei; Zapol, Peter; Stephenson, G. Brian
The Journal of Chemical Physics, Vol. 146, Issue 14
DOI: 10.1063/1.4979843

An instrument for in situ coherent x-ray studies of metal-organic vapor phase epitaxy of III-nitrides
journal, March 2017

Ju, Guangxu; Highland, Matthew J.; Yanguas-Gil, Angel
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Morphological evolution during epitaxial thin film growth: Formation of 2D islands and 3D mounds
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Metallicity of InN and GaN surfaces exposed to NH $_{3}$
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Walkosz, Weronika; Zapol, Peter; Stephenson, G. Brian
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Surface Science Reports, Vol. 64, Issue 8
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Computational and experimental studies on the growth of nonpolar surfaces of gallium nitride
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Jindal, Vibhu; Shahedipour-Sandvik, Fatemeh
Journal of Applied Physics, Vol. 107, Issue 5
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Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
journal, February 2013

DenBaars, Steven P.; Feezell, Daniel; Kelchner, Katheryn
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Atomic scale studies of epitaxial growth processes using X-ray techniques
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Lymperakis, Liverios; Neugebauer, Jörg
Physical Review B, Vol. 79, Issue 24
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Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy
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Browne, David A.; Young, Erin C.; Lang, Jordan R.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 30, Issue 4
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Works referencing / citing this record:

Coherent X-ray spectroscopy reveals the persistence of island arrangements during layer-by-layer growth
journal, March 2019

Ju, Guangxu; Xu, Dongwei; Highland, Matthew J.
Nature Physics, Vol. 15, Issue 6
DOI: 10.1038/s41567-019-0448-1

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Title: Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN

Abstract

Citation Formats

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Metallicity of InN and GaN surfaces exposed to NH 3 journal, January 2012

Nucleation and growth in metal‐on‐metal homoepitaxy: Rate equations, simulations and experiments journal, July 1994

Probing surface and interface morphology with Grazing Incidence Small Angle X-Ray Scattering journal, August 2009

Computational and experimental studies on the growth of nonpolar surfaces of gallium nitride journal, March 2010

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Atomic scale studies of epitaxial growth processes using X-ray techniques journal, May 1996

Large anisotropic adatom kinetics on nonpolar GaN surfaces: Consequences for surface morphologies and nanowire growth journal, June 2009

Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy journal, July 2012

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Real-time x-ray studies of crystal growth modes during metal-organic vapor phase epitaxy of GaN on c- and m-plane single crystals
journal, August 2014

Measurements of Surface Diffusivity and Coarsening during Pulsed Laser Deposition
journal, December 2009

Ab initio prediction of GaN ( $10 \bar{1} 0$ ) and (110) anomalous surface relaxation
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Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces
journal, April 2017

An instrument for in situ coherent x-ray studies of metal-organic vapor phase epitaxy of III-nitrides
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Morphological evolution during epitaxial thin film growth: Formation of 2D islands and 3D mounds
journal, April 2006

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Nucleation and growth in metal‐on‐metal homoepitaxy: Rate equations, simulations and experiments
journal, July 1994

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Computational and experimental studies on the growth of nonpolar surfaces of gallium nitride
journal, March 2010

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