Surface and bulk effects of K in Cu1-xKxIn1-yGaySe2 solar cells
Abstract
Two strategies for enhancing photovoltaic (PV) performance in chalcopyrite solar cells were investigated: Cu1-xKxIn1-yGaySe2 absorbers with low K content (K/(K+Cu), or x ~ 0.07) distributed throughout the bulk, and CuIn1-yGaySe2 absorbers with KIn1-yGaySe2 grown on their surfaces. Distributing K throughout the bulk absorbers improved power conversion efficiency, open-circuit voltage (VOC) and fill factor (FF) for Ga/(Ga+In) of 0, 0.3 and 0.5. Surface KIn1-yGaySe2 and bulk x ~ 0.07 Cu1-xKxIn1-yGaySe2 films with Ga/(Ga+In), or y of 0.3 and 0.5 also had improved efficiency, VOC, and FF, relative to CuIn1-yGaySe2 baselines. On the other hand, y ~ 1 absorbers did not benefit from K introduction. Similar to Cu1-xKxInSe2, the formation of Cu1-xKxGaSe2 alloys was favored at low temperatures and high Na supply by the substrate, relative to the formation of mixed-phase CuGaSe2 + KGaSe2. KIn1-yGaySe2 alloys were grown for the first time, as evidenced by X-ray diffraction and ultraviolet/visible spectroscopy. For all Ga/(Ga+In) compositions, the surface KIn1-yGaySe2 absorbers had superior PV performance in buffered and buffer-free devices. However, the bulk x ~ 0.07 absorbers only outperformed the baselines in buffered devices. The data demonstrate that KIn1-yGaySe2 passivates the surface of CuIn1-yGaySe2 to increase efficiency, VOC, and FF, while bulk Cu1-xKxIn1-yGaySe2 absorbers withmore »
- Authors:
-
- Univ. of Florida, Gainesville, FL (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Univ. of Florida, Gainesville, FL (United States)
- Publication Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- OSTI Identifier:
- 1417137
- Alternate Identifier(s):
- OSTI ID: 1548886
- Report Number(s):
- NREL/JA-5K00-70736
Journal ID: ISSN 0927-0248
- Grant/Contract Number:
- AC36-08GO28308
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Solar Energy Materials and Solar Cells
- Additional Journal Information:
- Journal Volume: 179; Journal Issue: C; Journal ID: ISSN 0927-0248
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; Cu(In,Ga)Se2; chalcopyrite; potassium; passivation; (Cu,K)GaSe2; K(In,Ga)Se2
Citation Formats
Muzzillo, Christopher P., and Anderson, Timothy J. Surface and bulk effects of K in Cu1-xKxIn1-yGaySe2 solar cells. United States: N. p., 2017.
Web. doi:10.1016/j.solmat.2017.12.038.
Muzzillo, Christopher P., & Anderson, Timothy J. Surface and bulk effects of K in Cu1-xKxIn1-yGaySe2 solar cells. United States. https://doi.org/10.1016/j.solmat.2017.12.038
Muzzillo, Christopher P., and Anderson, Timothy J. Fri .
"Surface and bulk effects of K in Cu1-xKxIn1-yGaySe2 solar cells". United States. https://doi.org/10.1016/j.solmat.2017.12.038. https://www.osti.gov/servlets/purl/1417137.
@article{osti_1417137,
title = {Surface and bulk effects of K in Cu1-xKxIn1-yGaySe2 solar cells},
author = {Muzzillo, Christopher P. and Anderson, Timothy J.},
abstractNote = {Two strategies for enhancing photovoltaic (PV) performance in chalcopyrite solar cells were investigated: Cu1-xKxIn1-yGaySe2 absorbers with low K content (K/(K+Cu), or x ~ 0.07) distributed throughout the bulk, and CuIn1-yGaySe2 absorbers with KIn1-yGaySe2 grown on their surfaces. Distributing K throughout the bulk absorbers improved power conversion efficiency, open-circuit voltage (VOC) and fill factor (FF) for Ga/(Ga+In) of 0, 0.3 and 0.5. Surface KIn1-yGaySe2 and bulk x ~ 0.07 Cu1-xKxIn1-yGaySe2 films with Ga/(Ga+In), or y of 0.3 and 0.5 also had improved efficiency, VOC, and FF, relative to CuIn1-yGaySe2 baselines. On the other hand, y ~ 1 absorbers did not benefit from K introduction. Similar to Cu1-xKxInSe2, the formation of Cu1-xKxGaSe2 alloys was favored at low temperatures and high Na supply by the substrate, relative to the formation of mixed-phase CuGaSe2 + KGaSe2. KIn1-yGaySe2 alloys were grown for the first time, as evidenced by X-ray diffraction and ultraviolet/visible spectroscopy. For all Ga/(Ga+In) compositions, the surface KIn1-yGaySe2 absorbers had superior PV performance in buffered and buffer-free devices. However, the bulk x ~ 0.07 absorbers only outperformed the baselines in buffered devices. The data demonstrate that KIn1-yGaySe2 passivates the surface of CuIn1-yGaySe2 to increase efficiency, VOC, and FF, while bulk Cu1-xKxIn1-yGaySe2 absorbers with x ~ 0.07 enhance efficiency, VOC, and FF by some other mechanism.},
doi = {10.1016/j.solmat.2017.12.038},
journal = {Solar Energy Materials and Solar Cells},
number = C,
volume = 179,
place = {United States},
year = {Fri Dec 29 00:00:00 EST 2017},
month = {Fri Dec 29 00:00:00 EST 2017}
}
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