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Title: Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers

Abstract

The benefits of utilizing transparent conductive oxide on top of a thin p-GaN layer for continuous-wave (CW) operation of blue laser diodes (LDs) were investigated. A very low operating voltage of 5.35 V at 10 kA/cm 2 was obtained for LDs with 250 nm thick p-GaN compared to 7.3 V for LDs with conventional 650 nm thick p-GaN. An improved thermal performance was also observed for the thin p-GaN samples resulting in a 40% increase in peak light output power and a 32% decrease in surface temperature. Finally, a tradeoff was demonstrated between low operating voltage and increased optical modal loss in the indium tin oxide (ITO) with thinner p-GaN. LDs lasing at 445 nm with 150 nm thick p-GaN had an excess modal loss while LDs with an optimal 250 nm thick p-GaN resulted in optical output power of 1.1 W per facet without facet coatings and a wall-plug efficiency of 15%.

Authors:
ORCiD logo; ; ; ;
Publication Date:
Research Org.:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1417123
Alternate Identifier(s):
OSTI ID: 1503242
Grant/Contract Number:  
AR0000671
Resource Type:
Published Article
Journal Name:
Optics Express
Additional Journal Information:
Journal Name: Optics Express Journal Volume: 26 Journal Issue: 2; Journal ID: ISSN 1094-4087
Publisher:
Optical Society of America
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Mehari, Shlomo, Cohen, Daniel A., Becerra, Daniel L., Nakamura, Shuji, and DenBaars, Steven P. Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers. United States: N. p., 2018. Web. doi:10.1364/OE.26.001564.
Mehari, Shlomo, Cohen, Daniel A., Becerra, Daniel L., Nakamura, Shuji, & DenBaars, Steven P. Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers. United States. doi:10.1364/OE.26.001564.
Mehari, Shlomo, Cohen, Daniel A., Becerra, Daniel L., Nakamura, Shuji, and DenBaars, Steven P. Tue . "Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers". United States. doi:10.1364/OE.26.001564.
@article{osti_1417123,
title = {Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers},
author = {Mehari, Shlomo and Cohen, Daniel A. and Becerra, Daniel L. and Nakamura, Shuji and DenBaars, Steven P.},
abstractNote = {The benefits of utilizing transparent conductive oxide on top of a thin p-GaN layer for continuous-wave (CW) operation of blue laser diodes (LDs) were investigated. A very low operating voltage of 5.35 V at 10 kA/cm2 was obtained for LDs with 250 nm thick p-GaN compared to 7.3 V for LDs with conventional 650 nm thick p-GaN. An improved thermal performance was also observed for the thin p-GaN samples resulting in a 40% increase in peak light output power and a 32% decrease in surface temperature. Finally, a tradeoff was demonstrated between low operating voltage and increased optical modal loss in the indium tin oxide (ITO) with thinner p-GaN. LDs lasing at 445 nm with 150 nm thick p-GaN had an excess modal loss while LDs with an optimal 250 nm thick p-GaN resulted in optical output power of 1.1 W per facet without facet coatings and a wall-plug efficiency of 15%.},
doi = {10.1364/OE.26.001564},
journal = {Optics Express},
number = 2,
volume = 26,
place = {United States},
year = {2018},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1364/OE.26.001564

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Cited by: 5 works
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Figures / Tables:

Fig. 1 Fig. 1: A schematic cross-section of the fabricated LDs with ITO p-contact layer. P-GaN cladding layer thickness was varied.

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Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.