Title: Self‐Powered Si/CdS Flexible Photodetector with Broadband Response from 325 to 1550 nm Based on Pyro‐phototronic Effect: An Approach for Photosensing below Bandgap Energy

Abstract

Abstract Cadmium sulfide (CdS) has received widespread attention as the building block of optoelectronic devices due to its extraordinary optoelectronic properties, low work function, and excellent thermal and chemical stability. Here, a self‐powered flexible photodetector (PD) based on p‐Si/n‐CdS nanowires heterostructure is fabricated. By introducing the pyro‐phototronic effect derived from wurtzite structured CdS, the self‐powered PD shows a broadband response range, even beyond the bandgap limitation, from UV (325 nm) to near infrared (1550 nm) under zero bias with fast response speed. The light‐induced pyroelectric potential is utilized to modulate the optoelectronic processes and thus improve the photoresponse performance. Lasers with different wavelengths have different effects on the self‐powered PDs and corresponding working mechanisms are carefully investigated. Upon 325 nm laser illumination, the rise time and fall time of the self‐powered PD are 245 and 277 µs, respectively, which are faster than those of most previously reported CdS‐based nanostructure PDs. Meanwhile, the photoresponsivity R and specific detectivity D * regarding to the relative peak‐to‐peak current are both enhanced by 67.8 times, compared with those only based on the photovoltaic effect‐induced photocurrent. The self‐powered flexible PD with fast speed, stable, and broadband response is expected to have extensive applications in variousmore » environments.« less

Authors:

Dai, Yejing ^[1]; Wang, Xingfu ^[2]; Peng, Wenbo ^[3]; Xu, Cheng ^[2]; Wu, Changsheng ^[2]; Dong, Kai ^[2]; Liu, Ruiyuan ^[2]; Wang, Zhong Lin  ^[4]

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• Search DOE PAGES for ORCID "0000-0002-5530-0380"

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+ Show Author Affiliations

1. School of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332‐0245 USA, Key Laboratory of Advanced Ceramics and Machining Technology Ministry of Education School of Materials Science and Engineering Tianjin University Tianjin 300072 China
2. School of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332‐0245 USA
3. School of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332‐0245 USA, School of Electronic and Information Engineering Xi'an Jiaotong University Xi'an 710049 China
4. School of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332‐0245 USA, Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 China

Publication Date:

Mon Jan 15 00:00:00 EST 2018

Sponsoring Org.:

USDOE

OSTI Identifier:

1417002

Grant/Contract Number:  

DE‐FG02‐07ER46394

Resource Type:

Publisher's Accepted Manuscript

Journal Name:

Advanced Materials

Additional Journal Information:

Journal Name: Advanced Materials Journal Volume: 30 Journal Issue: 9; Journal ID: ISSN 0935-9648

Publisher:

Wiley Blackwell (John Wiley & Sons)

Country of Publication:

Germany

Language:

English