skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Deconvoluting the Photonic and Electronic Response of 2D Materials: The Case of MoS2

Abstract

Evaluating and tuning the properties of two-dimensional (2D) materials is a major focus of advancing 2D science and technology. While many claim that the photonic properties of a 2D layer provide evidence that the material is "high quality", this may not be true for electronic performance. In this work, we deconvolute the photonic and electronic response of synthetic monolayer molybdenum disulfide. We demonstrate that enhanced photoluminescence can be robustly engineered via the proper choice of substrate, where growth of MoS2 on r-plane sapphire can yield > 100x enhancement in PL and carrier lifetime due to increased molybdenum-oxygen bonding compared to that of traditionally grown MoS2 on c-plane sapphire. These dramatic enhancements in optical properties are similar to those of super-acid treated MoS2 , and suggest that the electronic properties of the MoS2 are also superior. However, a direct comparison of the charge transport properties indicates that the enhanced PL due to increased Mo-O bonding leads to p-type compensation doping, and is accompanied by a 2x degradation in transport properties compared to MoS2 grown on c-plane sapphire. This work provides a foundation for understanding the link between photonic and electronic performance of 2D semiconducting layers, and demonstrates that they are notmore » always correlated.« less

Authors:
 [1];  [2];  [1];  [1];  [3];  [1];  [1];  [1];  [1];  [1];  [2];  [3];  [2];  [1]
  1. Pennsylvania State Univ., University Park, PA (United States)
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  3. Univ. of Pittsburgh, PA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1416942
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 7; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Zhang, Kehao, Borys, Nicholas J., Bersch, Brian M., Bhimanapati, Ganesh R., Xu, Ke, Wang, Baoming, Wang, Ke, Labella, Michael, Williams, Teague A., Haque, Md Amanul., Barnard, Edward S., Fullerton-Shirey, Susan, Schuck, P. James, and Robinson, Joshua A. Deconvoluting the Photonic and Electronic Response of 2D Materials: The Case of MoS2. United States: N. p., 2017. Web. doi:10.1038/s41598-017-16970-6.
Zhang, Kehao, Borys, Nicholas J., Bersch, Brian M., Bhimanapati, Ganesh R., Xu, Ke, Wang, Baoming, Wang, Ke, Labella, Michael, Williams, Teague A., Haque, Md Amanul., Barnard, Edward S., Fullerton-Shirey, Susan, Schuck, P. James, & Robinson, Joshua A. Deconvoluting the Photonic and Electronic Response of 2D Materials: The Case of MoS2. United States. doi:10.1038/s41598-017-16970-6.
Zhang, Kehao, Borys, Nicholas J., Bersch, Brian M., Bhimanapati, Ganesh R., Xu, Ke, Wang, Baoming, Wang, Ke, Labella, Michael, Williams, Teague A., Haque, Md Amanul., Barnard, Edward S., Fullerton-Shirey, Susan, Schuck, P. James, and Robinson, Joshua A. Tue . "Deconvoluting the Photonic and Electronic Response of 2D Materials: The Case of MoS2". United States. doi:10.1038/s41598-017-16970-6. https://www.osti.gov/servlets/purl/1416942.
@article{osti_1416942,
title = {Deconvoluting the Photonic and Electronic Response of 2D Materials: The Case of MoS2},
author = {Zhang, Kehao and Borys, Nicholas J. and Bersch, Brian M. and Bhimanapati, Ganesh R. and Xu, Ke and Wang, Baoming and Wang, Ke and Labella, Michael and Williams, Teague A. and Haque, Md Amanul. and Barnard, Edward S. and Fullerton-Shirey, Susan and Schuck, P. James and Robinson, Joshua A.},
abstractNote = {Evaluating and tuning the properties of two-dimensional (2D) materials is a major focus of advancing 2D science and technology. While many claim that the photonic properties of a 2D layer provide evidence that the material is "high quality", this may not be true for electronic performance. In this work, we deconvolute the photonic and electronic response of synthetic monolayer molybdenum disulfide. We demonstrate that enhanced photoluminescence can be robustly engineered via the proper choice of substrate, where growth of MoS2 on r-plane sapphire can yield > 100x enhancement in PL and carrier lifetime due to increased molybdenum-oxygen bonding compared to that of traditionally grown MoS2 on c-plane sapphire. These dramatic enhancements in optical properties are similar to those of super-acid treated MoS2 , and suggest that the electronic properties of the MoS2 are also superior. However, a direct comparison of the charge transport properties indicates that the enhanced PL due to increased Mo-O bonding leads to p-type compensation doping, and is accompanied by a 2x degradation in transport properties compared to MoS2 grown on c-plane sapphire. This work provides a foundation for understanding the link between photonic and electronic performance of 2D semiconducting layers, and demonstrates that they are not always correlated.},
doi = {10.1038/s41598-017-16970-6},
journal = {Scientific Reports},
number = 1,
volume = 7,
place = {United States},
year = {2017},
month = {12}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 8 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
journal, May 2013

  • van der Zande, Arend M.; Huang, Pinshane Y.; Chenet, Daniel A.
  • Nature Materials, Vol. 12, Issue 6, p. 554-561
  • DOI: 10.1038/nmat3633

Extraordinary Room-Temperature Photoluminescence in Triangular WS 2 Monolayers
journal, December 2012

  • Gutiérrez, Humberto R.; Perea-López, Nestor; Elías, Ana Laura
  • Nano Letters, Vol. 13, Issue 8
  • DOI: 10.1021/nl3026357

Surface Structure of Protonated R-Sapphire (11̅02) Studied by Sum-Frequency Vibrational Spectroscopy
journal, March 2011

  • Sung, Jaeho; Zhang, Luning; Tian, Chuanshan
  • Journal of the American Chemical Society, Vol. 133, Issue 11
  • DOI: 10.1021/ja104042u

Strong Photoluminescence Enhancement of MoS 2 through Defect Engineering and Oxygen Bonding
journal, May 2014

  • Nan, Haiyan; Wang, Zilu; Wang, Wenhui
  • ACS Nano, Vol. 8, Issue 6
  • DOI: 10.1021/nn500532f

Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers
journal, June 2013

  • Najmaei, Sina; Liu, Zheng; Zhou, Wu
  • Nature Materials, Vol. 12, Issue 8, p. 754-759
  • DOI: 10.1038/nmat3673

Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons
journal, September 2013

  • Tongay, Sefaattin; Suh, Joonki; Ataca, Can
  • Scientific Reports, Vol. 3, Issue 1
  • DOI: 10.1038/srep02657

In situ incorporation of a S, N doped carbon/sulfur composite for lithium sulfur batteries
journal, January 2015

  • Yang, Zhigao; Dai, Yu; Wang, Shengping
  • RSC Advances, Vol. 5, Issue 95
  • DOI: 10.1039/C5RA15360C

Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics
journal, October 2014


The adhesion properties of the Ag/α-Al2O3() interface: an ab initio study
journal, July 2002


Unravelling Orientation Distribution and Merging Behavior of Monolayer MoS 2 Domains on Sapphire
journal, December 2014

  • Ji, Qingqing; Kan, Min; Zhang, Yu
  • Nano Letters, Vol. 15, Issue 1
  • DOI: 10.1021/nl503373x

Electronic structure of MoSe 2 , MoS 2 , and WSe 2 . I. Band-structure calculations and photoelectron spectroscopy
journal, April 1987


Crystal truncation rod diffraction study of the α-Al2O3 (102) surface
journal, January 2002


Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide
journal, March 2014

  • Baugher, Britton W. H.; Churchill, Hugh O. H.; Yang, Yafang
  • Nature Nanotechnology, Vol. 9, Issue 4
  • DOI: 10.1038/nnano.2014.25

Recent Advances in Two-Dimensional Materials beyond Graphene
journal, October 2015


Vapor–Solid Growth of High Optical Quality MoS 2 Monolayers with Near-Unity Valley Polarization
journal, March 2013

  • Wu, Sanfeng; Huang, Chunming; Aivazian, Grant
  • ACS Nano, Vol. 7, Issue 3
  • DOI: 10.1021/nn4002038

Anomalous Above-Gap Photoexcitations and Optical Signatures of Localized Charge Puddles in Monolayer Molybdenum Disulfide
journal, February 2017


Fundamental limits of exciton-exciton annihilation for light emission in transition metal dichalcogenide monolayers
journal, May 2016


Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
journal, January 2014

  • Jariwala, Deep; Sangwan, Vinod K.; Lauhon, Lincoln J.
  • ACS Nano, Vol. 8, Issue 2
  • DOI: 10.1021/nn500064s

Photoluminescence of monolayer MoS 2 on LaAlO 3 and SrTiO 3 substrates
journal, January 2014


Radiative lifetimes of excitons and trions in monolayers of the metal dichalcogenide MoS 2
journal, January 2016


Impurities and Electronic Property Variations of Natural MoS 2 Crystal Surfaces
journal, August 2015


Transport Properties of Monolayer MoS 2 Grown by Chemical Vapor Deposition
journal, March 2014

  • Schmidt, Hennrik; Wang, Shunfeng; Chu, Leiqiang
  • Nano Letters, Vol. 14, Issue 4
  • DOI: 10.1021/nl4046922

Tunable Photoluminescence of Monolayer MoS 2 via Chemical Doping
journal, November 2013

  • Mouri, Shinichiro; Miyauchi, Yuhei; Matsuda, Kazunari
  • Nano Letters, Vol. 13, Issue 12
  • DOI: 10.1021/nl403036h

Reconfigurable Ion Gating of 2H-MoTe 2 Field-Effect Transistors Using Poly(ethylene oxide)-CsClO 4 Solid Polymer Electrolyte
journal, April 2015

  • Xu, Huilong; Fathipour, Sara; Kinder, Erich W.
  • ACS Nano, Vol. 9, Issue 5
  • DOI: 10.1021/nn506521p

Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010


Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
journal, March 2012

  • Lee, Yi-Hsien; Zhang, Xin-Quan; Zhang, Wenjing
  • Advanced Materials, Vol. 24, Issue 17, p. 2320-2325
  • DOI: 10.1002/adma.201104798

Ab Initio Hartree-Fock Simulation of R-Plane Sapphire
journal, January 2012


Tightly bound trions in monolayer MoS2
journal, December 2012

  • Mak, Kin Fai; He, Keliang; Lee, Changgu
  • Nature Materials, Vol. 12, Issue 3
  • DOI: 10.1038/nmat3505

Ultrasensitive photodetectors based on monolayer MoS2
journal, June 2013

  • Lopez-Sanchez, Oriol; Lembke, Dominik; Kayci, Metin
  • Nature Nanotechnology, Vol. 8, Issue 7
  • DOI: 10.1038/nnano.2013.100

EXAFS and XANES spectroscopy study of the oxidation and deprotonation of biotite
journal, December 1989


Near-unity photoluminescence quantum yield in MoS2
journal, November 2015


Evolution of Electronic Structure in Atomically Thin Sheets of WS 2 and WSe 2
journal, December 2012

  • Zhao, Weijie; Ghorannevis, Zohreh; Chu, Leiqiang
  • ACS Nano, Vol. 7, Issue 1
  • DOI: 10.1021/nn305275h

Intrinsic Structural Defects in Monolayer Molybdenum Disulfide
journal, May 2013

  • Zhou, Wu; Zou, Xiaolong; Najmaei, Sina
  • Nano Letters, Vol. 13, Issue 6, p. 2615-2622
  • DOI: 10.1021/nl4007479

Large-Area Epitaxial Monolayer MoS 2
journal, February 2015


Single-layer MoS2 transistors
journal, January 2011

  • Radisavljevic, B.; Radenovic, A.; Brivio, J.
  • Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
  • DOI: 10.1038/nnano.2010.279

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
journal, June 2012

  • Fang, Hui; Chuang, Steven; Chang, Ting Chia
  • Nano Letters, Vol. 12, Issue 7, p. 3788-3792
  • DOI: 10.1021/nl301702r

High Performance Multilayer MoS2Transistors with Scandium Contacts
journal, December 2012

  • Das, Saptarshi; Chen, Hong-Yan; Penumatcha, Ashish Verma
  • Nano Letters, Vol. 13, Issue 1, p. 100-105
  • DOI: 10.1021/nl303583v

Selective-area growth and controlled substrate coupling of transition metal dichalcogenides
journal, April 2017


Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe 2 Field Effect Transistors
journal, April 2013

  • Liu, Wei; Kang, Jiahao; Sarkar, Deblina
  • Nano Letters, Vol. 13, Issue 5
  • DOI: 10.1021/nl304777e

Ultrasensitive and Broadband MoS 2 Photodetector Driven by Ferroelectrics
journal, September 2015


    Works referencing / citing this record:

    Doping of Two-Dimensional Semiconductors: A Rapid Review and Outlook
    journal, January 2019


    Doping of Two-Dimensional Semiconductors: A Rapid Review and Outlook
    journal, January 2019