Gapped electronic structure of epitaxial stanene on InSb(111)
Abstract
We report that stanene (single-layer gray tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This material has received much theoretical attention, but a suitable substrate for stanene growth that results in an overall gapped electronic structure has been elusive; a sizable gap is necessary for room-temperature applications. Here, we report a study of stanene, epitaxially grown on the (111)B-face of indium antimonide (InSb). Angle-resolved photoemission spectroscopy measurements reveal a gap of 0.44 eV, in agreement with our first-principles calculations. Lastly, the results indicate that stanene on InSb(111) is a strong contender for electronic QSH applications.
- Authors:
-
- Univ. of Illinois at Urbana-Champaign, IL (United States). Dept. of Physics; Univ. of Illinois at Urbana-Champaign, IL (United States). Frederick Seitz Materials Research Lab.; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
- Academia Sinica, Taipei (Taiwan). Inst. of Atomic and Molecular Sciences
- Univ. of Illinois at Urbana-Champaign, IL (United States). Dept. of Physics; Univ. of Illinois at Urbana-Champaign, IL (United States). Frederick Seitz Materials Research Lab.; Nanjing Univ. of Science and Technology, Nanjing (China). College of Science
- Univ. of Illinois at Urbana-Champaign, IL (United States). Dept. of Physics; Univ. of Illinois at Urbana-Champaign, IL (United States). Frederick Seitz Materials Research Lab.
- Univ. of Missouri, Columbia, MO (United States). Dept. of Physics and Astronomy
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
- Academia Sinica, Taipei (Taiwan). Inst. of Atomic and Molecular Sciences; Georgia Inst. of Technology, Atlanta, GA (United States). School of Physics
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); Univerisity of Illinois at Urbana-Champaign, Urbana, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
- OSTI Identifier:
- 1571094
- Alternate Identifier(s):
- OSTI ID: 1416628; OSTI ID: 1416710
- Grant/Contract Number:
- AC02-05CH11231; FG02-07ER46383
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 97; Journal Issue: 3; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Xu, Cai-Zhi, Chan, Yang-Hao, Chen, Peng, Wang, Xiaoxiong, Flötotto, David, Hlevyack, Joseph Andrew, Bian, Guang, Mo, Sung-Kwan, Chou, Mei-Yin, and Chiang, Tai-Chang. Gapped electronic structure of epitaxial stanene on InSb(111). United States: N. p., 2018.
Web. doi:10.1103/PhysRevB.97.035122.
Xu, Cai-Zhi, Chan, Yang-Hao, Chen, Peng, Wang, Xiaoxiong, Flötotto, David, Hlevyack, Joseph Andrew, Bian, Guang, Mo, Sung-Kwan, Chou, Mei-Yin, & Chiang, Tai-Chang. Gapped electronic structure of epitaxial stanene on InSb(111). United States. https://doi.org/10.1103/PhysRevB.97.035122
Xu, Cai-Zhi, Chan, Yang-Hao, Chen, Peng, Wang, Xiaoxiong, Flötotto, David, Hlevyack, Joseph Andrew, Bian, Guang, Mo, Sung-Kwan, Chou, Mei-Yin, and Chiang, Tai-Chang. Thu .
"Gapped electronic structure of epitaxial stanene on InSb(111)". United States. https://doi.org/10.1103/PhysRevB.97.035122. https://www.osti.gov/servlets/purl/1571094.
@article{osti_1571094,
title = {Gapped electronic structure of epitaxial stanene on InSb(111)},
author = {Xu, Cai-Zhi and Chan, Yang-Hao and Chen, Peng and Wang, Xiaoxiong and Flötotto, David and Hlevyack, Joseph Andrew and Bian, Guang and Mo, Sung-Kwan and Chou, Mei-Yin and Chiang, Tai-Chang},
abstractNote = {We report that stanene (single-layer gray tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This material has received much theoretical attention, but a suitable substrate for stanene growth that results in an overall gapped electronic structure has been elusive; a sizable gap is necessary for room-temperature applications. Here, we report a study of stanene, epitaxially grown on the (111)B-face of indium antimonide (InSb). Angle-resolved photoemission spectroscopy measurements reveal a gap of 0.44 eV, in agreement with our first-principles calculations. Lastly, the results indicate that stanene on InSb(111) is a strong contender for electronic QSH applications.},
doi = {10.1103/PhysRevB.97.035122},
journal = {Physical Review B},
number = 3,
volume = 97,
place = {United States},
year = {Thu Jan 11 00:00:00 EST 2018},
month = {Thu Jan 11 00:00:00 EST 2018}
}
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Figures / Tables:
FIG. 1: (a) Top and side views of the atomic structure of stanene. (b) Brillouin zone of stanene. (c) RHEED intensity as a function of time of Sn growth on InSb(111). The blue arrows mark when each layer of Sn is formed. (d) RHEED pattern of the InSb(111) substrate beforemore »
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