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Title: Effects of in-situ UV irradiation on the uniformity and optical properties of GaAsBi epi-layers grown by MBE

In-situ UV illumination influences the incorporation dynamics of bismuth adatom in GaAs. Here we use the inherent variation of the fluence across the sample to explore the role of the incident irradiation. With illumination it is found that steady state growth processes are achieved more quickly resulting in more abrupt interfaces, as well as uniform GaAs 1-xBi x epi-layers. Comparisons of low temperature photoluminescence spectra show an increasing density of clusters of incorporated bismuth atoms with decreasing incident fluence.
Authors:
 [1] ;  [1] ;  [1] ;  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Report Number(s):
NREL/JA-5K00-70754
Journal ID: ISSN 0022-0248
Grant/Contract Number:
AC36-08GO28308
Type:
Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 484; Journal Issue: C; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; molecular beam epitaxy; impurities; bismuth compounds; semiconducting III-V materials
OSTI Identifier:
1416525

Beaton, Daniel A., Steger, M., Christian, T., and Mascarenhas, A.. Effects of in-situ UV irradiation on the uniformity and optical properties of GaAsBi epi-layers grown by MBE. United States: N. p., Web. doi:10.1016/j.jcrysgro.2017.12.026.
Beaton, Daniel A., Steger, M., Christian, T., & Mascarenhas, A.. Effects of in-situ UV irradiation on the uniformity and optical properties of GaAsBi epi-layers grown by MBE. United States. doi:10.1016/j.jcrysgro.2017.12.026.
Beaton, Daniel A., Steger, M., Christian, T., and Mascarenhas, A.. 2017. "Effects of in-situ UV irradiation on the uniformity and optical properties of GaAsBi epi-layers grown by MBE". United States. doi:10.1016/j.jcrysgro.2017.12.026. https://www.osti.gov/servlets/purl/1416525.
@article{osti_1416525,
title = {Effects of in-situ UV irradiation on the uniformity and optical properties of GaAsBi epi-layers grown by MBE},
author = {Beaton, Daniel A. and Steger, M. and Christian, T. and Mascarenhas, A.},
abstractNote = {In-situ UV illumination influences the incorporation dynamics of bismuth adatom in GaAs. Here we use the inherent variation of the fluence across the sample to explore the role of the incident irradiation. With illumination it is found that steady state growth processes are achieved more quickly resulting in more abrupt interfaces, as well as uniform GaAs1-xBix epi-layers. Comparisons of low temperature photoluminescence spectra show an increasing density of clusters of incorporated bismuth atoms with decreasing incident fluence.},
doi = {10.1016/j.jcrysgro.2017.12.026},
journal = {Journal of Crystal Growth},
number = C,
volume = 484,
place = {United States},
year = {2017},
month = {12}
}