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Title: Defect-driven flexochemical coupling in thin ferroelectric films

Authors:
; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1415877
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 97 Journal Issue: 2; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Eliseev, Eugene A., Vorotiahin, Ivan S., Fomichov, Yevhen M., Glinchuk, Maya D., Kalinin, Sergei V., Genenko, Yuri A., and Morozovska, Anna N. Defect-driven flexochemical coupling in thin ferroelectric films. United States: N. p., 2018. Web. doi:10.1103/PhysRevB.97.024102.
Eliseev, Eugene A., Vorotiahin, Ivan S., Fomichov, Yevhen M., Glinchuk, Maya D., Kalinin, Sergei V., Genenko, Yuri A., & Morozovska, Anna N. Defect-driven flexochemical coupling in thin ferroelectric films. United States. doi:10.1103/PhysRevB.97.024102.
Eliseev, Eugene A., Vorotiahin, Ivan S., Fomichov, Yevhen M., Glinchuk, Maya D., Kalinin, Sergei V., Genenko, Yuri A., and Morozovska, Anna N. Fri . "Defect-driven flexochemical coupling in thin ferroelectric films". United States. doi:10.1103/PhysRevB.97.024102.
@article{osti_1415877,
title = {Defect-driven flexochemical coupling in thin ferroelectric films},
author = {Eliseev, Eugene A. and Vorotiahin, Ivan S. and Fomichov, Yevhen M. and Glinchuk, Maya D. and Kalinin, Sergei V. and Genenko, Yuri A. and Morozovska, Anna N.},
abstractNote = {},
doi = {10.1103/PhysRevB.97.024102},
journal = {Physical Review B},
number = 2,
volume = 97,
place = {United States},
year = {2018},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
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DOI: 10.1103/PhysRevB.97.024102

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Cited by: 10 works
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