Epitaxial growth of high quality SrFeO3 films on (001) oriented (LaAlO3)0.3(Sr2TaAlO6)0.7

Hong, Deshun; Liu, Changjiang; Pearson, John; Bhattacharya, Anand

doi:10.1063/1.5002672

Title: Epitaxial growth of high quality SrFeO₃ films on (001) oriented (LaAlO₃)_0.3(Sr₂TaAlO₆)_0.7

Abstract

Growth of strontium ferrite SrFeO₃ films with stoichiometry of (1:1:3) is challenging as the unstable Fe⁴⁺ oxidation state favors the formation of O vacancies. Here, we report layer by layer growth of SrFeO₃ on (001) oriented (LaAlO₃)_0.3(Sr₂TaAlO₆)_0.7 using ozone assisted molecular beam epitaxy. Upon cooling from room temperature, the film’s resistivity decreased from 750 μΩ cm to 150 μΩ cm, as low as the best single crystals, with two identifiable transition points near 110 K and 60 K in resistivity measurements, being hysteretic between cooling and warming through the 60 K transition. During various annealing steps, the low temperature resistivity changes by orders of magnitude, accompanied by an increase in the c-axis lattice parameter. The hysteresis near 60 K persists for a wide range of annealing conditions. We have identified conditions under which changes due to annealing can be reversed. Here, we attribute changes in resistivity and out of plane lattice parameter to the reversible movement of oxygen ions in the lattice. SrFeO₃ may be a promising material for resistive memory applications based upon the control of oxygen vacancies.

Authors:

Hong, Deshun ^[1]; Liu, Changjiang ^[1]; Pearson, John ^[1];

^[1]

Argonne National Lab. (ANL), Argonne, IL (United States)

Publication Date:: Mon Dec 04 00:00:00 EST 2017

Research Org.:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE

OSTI Identifier:: 1415602

Alternate Identifier(s):: OSTI ID: 1411987

Grant/Contract Number:: AC02-06CH11357; DEAC02-06CH11357

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 111; Journal Issue: 23; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Hong, Deshun, Liu, Changjiang, Pearson, John, and Bhattacharya, Anand. Epitaxial growth of high quality SrFeO3 films on (001) oriented (LaAlO3)0.3(Sr2TaAlO6)0.7.  United States: N. p., 2017. 
Web.  doi:10.1063/1.5002672.

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                    Hong, Deshun, Liu, Changjiang, Pearson, John, & Bhattacharya, Anand. Epitaxial growth of high quality SrFeO3 films on (001) oriented (LaAlO3)0.3(Sr2TaAlO6)0.7.  United States.  https://doi.org/10.1063/1.5002672

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                    Hong, Deshun, Liu, Changjiang, Pearson, John, and Bhattacharya, Anand. Mon .  
"Epitaxial growth of high quality SrFeO3 films on (001) oriented (LaAlO3)0.3(Sr2TaAlO6)0.7".  United States.  https://doi.org/10.1063/1.5002672.  https://www.osti.gov/servlets/purl/1415602.

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@article{osti_1415602,

  title        = {Epitaxial growth of high quality SrFeO3 films on (001) oriented (LaAlO3)0.3(Sr2TaAlO6)0.7},

  author       = {Hong, Deshun and Liu, Changjiang and Pearson, John and Bhattacharya, Anand},

  abstractNote = {Growth of strontium ferrite SrFeO3 films with stoichiometry of (1:1:3) is challenging as the unstable Fe4+ oxidation state favors the formation of O vacancies. Here, we report layer by layer growth of SrFeO3 on (001) oriented (LaAlO3)0.3(Sr2TaAlO6)0.7 using ozone assisted molecular beam epitaxy. Upon cooling from room temperature, the film’s resistivity decreased from 750 μΩ cm to 150 μΩ cm, as low as the best single crystals, with two identifiable transition points near 110 K and 60 K in resistivity measurements, being hysteretic between cooling and warming through the 60 K transition. During various annealing steps, the low temperature resistivity changes by orders of magnitude, accompanied by an increase in the c-axis lattice parameter. The hysteresis near 60 K persists for a wide range of annealing conditions. We have identified conditions under which changes due to annealing can be reversed. Here, we attribute changes in resistivity and out of plane lattice parameter to the reversible movement of oxygen ions in the lattice. SrFeO3 may be a promising material for resistive memory applications based upon the control of oxygen vacancies.},

  doi          = {10.1063/1.5002672},

  journal      = {Applied Physics Letters},

  number       = 23,

  volume       = 111,

  place        = {United States},

  year         = {Mon Dec 04 00:00:00 EST 2017},

  month        = {Mon Dec 04 00:00:00 EST 2017}

}

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Works referencing / citing this record:

Spin Seebeck effect in insulating SrFeO _3−δ films
journal, June 2019

Hong, Deshun; Liu, Changjiang; Pearson, John E.
Applied Physics Letters, Vol. 114, Issue 24
DOI: 10.1063/1.5097422

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Title: Epitaxial growth of high quality SrFeO3 films on (001) oriented (LaAlO3)0.3(Sr2TaAlO6)0.7

Abstract

Citation Formats

Pressure-induced high-spin to low-spin transition in CaFeO 3 journal, December 1991

The physics of manganites: Structure and transport journal, August 2001

Colossal magnetoresistant materials: the key role of phase separation journal, April 2001

Magnetic-field-induced metal-insulator phenomena in Pr 1 − x Ca x Mn O 3 with controlled charge-ordering instability journal, January 1996

Giant oxygen isotope shift in the magnetoresistive perovskite La1–xCaxMnO3+y journal, June 1996

Evolution of Oxygen-Vacancy Ordered Crystal Structures in the Perovskite Series SrnFenO3n−1 (n=2, 4, 8, and ∞), and the Relationship to Electronic and Magnetic Properties journal, May 2000

Evolution of magnetic phases in single crystals of SrFe 1 − x Co x O 3 solid solution journal, August 2012

Percolative phase separation underlies colossal magnetoresistance in mixed-valent manganites journal, June 1999

Oxygen vacancy-driven evolution of structural and electrical properties in SrFeO3−δ thin films and a method of stabilization journal, October 2016

Epitaxial growth and valence control of strained perovskite SrFeO3 films journal, January 2002

Structural studies of charge disproportionation and magnetic order in CaFeO 3 journal, July 2000

Helicoidal Ordering in Iron Perovskites journal, April 2005

Multiple helimagnetic phases and topological Hall effect in epitaxial thin films of pristine and Co-doped SrFeO 3 journal, December 2013

Topotactic Changes in Thin Films of Brownmillerite SrFeO 2.5 Grown on SrTiO 3 Substrates to Infinite-Layer Structure SrFeO 2 journal, November 2010

Critical features of colossal magnetoresistive manganites journal, February 2006

Pulsed laser deposition of (110) oriented semiconductive SrFeO 3−x thin films journal, December 1996

Magnetism, Charge Order, and Giant Magnetoresistance in S r F e O 3 − δ Single Crystals journal, January 2004

Electronic structure of SrFe 4 + O 3 and related Fe perovskite oxides journal, January 1992

Competing Ferromagnetic and Charge-Ordered States in Models for Manganites: The Origin of the Colossal Magnetoresistance Effect journal, March 2007

Interaction Between the d Shells in the Transition Metals journal, February 1951

Spin Seebeck effect in insulating SrFeO 3−δ films journal, June 2019

Title: Epitaxial growth of high quality SrFeO₃ films on (001) oriented (LaAlO₃)_0.3(Sr₂TaAlO₆)_0.7

Pressure-induced high-spin to low-spin transition in ${CaFeO}_{3}$
journal, December 1991

The physics of manganites: Structure and transport
journal, August 2001

Colossal magnetoresistant materials: the key role of phase separation
journal, April 2001

Magnetic-field-induced metal-insulator phenomena in $\Pr_{1 - x} {Ca}_{x} Mn O_{3}$ with controlled charge-ordering instability
journal, January 1996

Giant oxygen isotope shift in the magnetoresistive perovskite La1–xCaxMnO3+y
journal, June 1996

Evolution of Oxygen-Vacancy Ordered Crystal Structures in the Perovskite Series SrnFenO3n−1 (n=2, 4, 8, and ∞), and the Relationship to Electronic and Magnetic Properties
journal, May 2000

Evolution of magnetic phases in single crystals of SrFe $_{1 - x}$ Co $_{x}$ O $_{3}$ solid solution
journal, August 2012

Percolative phase separation underlies colossal magnetoresistance in mixed-valent manganites
journal, June 1999

Oxygen vacancy-driven evolution of structural and electrical properties in SrFeO3−δ thin films and a method of stabilization
journal, October 2016

Epitaxial growth and valence control of strained perovskite SrFeO3 films
journal, January 2002

Structural studies of charge disproportionation and magnetic order in ${CaFeO}_{3}$
journal, July 2000

Helicoidal Ordering in Iron Perovskites
journal, April 2005

Multiple helimagnetic phases and topological Hall effect in epitaxial thin films of pristine and Co-doped SrFeO $_{3}$
journal, December 2013

Topotactic Changes in Thin Films of Brownmillerite SrFeO _2.5 Grown on SrTiO ₃ Substrates to Infinite-Layer Structure SrFeO ₂
journal, November 2010

Critical features of colossal magnetoresistive manganites
journal, February 2006

Pulsed laser deposition of (110) oriented semiconductive SrFeO 3−x thin films
journal, December 1996

Magnetism, Charge Order, and Giant Magnetoresistance in ${S r F e O}_{3 − δ}$ Single Crystals
journal, January 2004

Electronic structure of ${SrFe}^{4 +}$ $O_{3}$ and related Fe perovskite oxides
journal, January 1992

Competing Ferromagnetic and Charge-Ordered States in Models for Manganites: The Origin of the Colossal Magnetoresistance Effect
journal, March 2007

Interaction Between the $d$ Shells in the Transition Metals
journal, February 1951

Spin Seebeck effect in insulating SrFeO _3−δ films
journal, June 2019