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This content will become publicly available on December 4, 2018

Title: Epitaxial growth of high quality SrFeO 3 films on (001) oriented (LaAlO 3) 0.3(Sr 2TaAlO 6) 0.7

Growth of strontium ferrite SrFeO 3 films with stoichiometry of (1:1:3) is challenging as the unstable Fe 4+ oxidation state favors the formation of O vacancies. Here, we report layer by layer growth of SrFeO 3 on (001) oriented (LaAlO 3) 0.3(Sr 2TaAlO 6) 0.7 using ozone assisted molecular beam epitaxy. Upon cooling from room temperature, the film’s resistivity decreased from 750 μΩ cm to 150 μΩ cm, as low as the best single crystals, with two identifiable transition points near 110 K and 60 K in resistivity measurements, being hysteretic between cooling and warming through the 60 K transition. During various annealing steps, the low temperature resistivity changes by orders of magnitude, accompanied by an increase in the c-axis lattice parameter. The hysteresis near 60 K persists for a wide range of annealing conditions. We have identified conditions under which changes due to annealing can be reversed. Here, we attribute changes in resistivity and out of plane lattice parameter to the reversible movement of oxygen ions in the lattice. SrFeO 3 may be a promising material for resistive memory applications based upon the control of oxygen vacancies.
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  1. Argonne National Lab. (ANL), Argonne, IL (United States)
Publication Date:
Grant/Contract Number:
AC02-06CH11357; DEAC02-06CH11357
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 23; Journal ID: ISSN 0003-6951
American Institute of Physics (AIP)
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE
Country of Publication:
United States
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1411987