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Title: Bright nanowire single photon source based on SiV centers in diamond

Abstract

The practical implementation of quantum technologies such as quantum commu- nication and quantum cryptography relies on the development of indistinguishable, robust, and bright single photon sources that works at room temperature. The silicon- vacancy (SiV-) center in diamond has emerged as a possible candidate for a single photon source with all these characteristics. Unfortunately, due to the high refraction index mismatch between diamond and air, color centers in diamond show low photon out-coupling. This drawback can be overcome by fabrication of photonic structures that improve the in-coupling of excitation laser to the diamond defect as well as the out-coupling emission from the color centers. An additional shortcoming is due to the random localization of native defects in the diamond sample. Here we demonstrate deterministic implantation of Si ions with high conversion effciency to single SiV-, targeted to fabricated nanowires. The co-localization of single SiV- defects with the nanostructures yields a ten times higher light coupling effciency as compared to single SiV- in the bulk. This result, with its intrinsic scalability, enables a new class of devices for integrated photonics and quantum information processing.

Authors:
; ; ; ; ; ; ; ; ; ; ORCiD logo
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1415337
Alternate Identifier(s):
OSTI ID: 1429740
Report Number(s):
SAND-2017-1943J
Journal ID: ISSN 1094-4087; OPEXFF
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Published Article
Journal Name:
Optics Express
Additional Journal Information:
Journal Name: Optics Express Journal Volume: 26 Journal Issue: 1; Journal ID: ISSN 1094-4087
Publisher:
Optical Society of America
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS

Citation Formats

Marseglia, L., Saha, K., Ajoy, A., Schröder, T., Englund, D., Jelezko, F., Walsworth, R., Pacheco, J. L., Perry, D. L., Bielejec, E. S., and Cappellaro, P. Bright nanowire single photon source based on SiV centers in diamond. United States: N. p., 2018. Web. doi:10.1364/OE.26.000080.
Marseglia, L., Saha, K., Ajoy, A., Schröder, T., Englund, D., Jelezko, F., Walsworth, R., Pacheco, J. L., Perry, D. L., Bielejec, E. S., & Cappellaro, P. Bright nanowire single photon source based on SiV centers in diamond. United States. doi:10.1364/OE.26.000080.
Marseglia, L., Saha, K., Ajoy, A., Schröder, T., Englund, D., Jelezko, F., Walsworth, R., Pacheco, J. L., Perry, D. L., Bielejec, E. S., and Cappellaro, P. Tue . "Bright nanowire single photon source based on SiV centers in diamond". United States. doi:10.1364/OE.26.000080.
@article{osti_1415337,
title = {Bright nanowire single photon source based on SiV centers in diamond},
author = {Marseglia, L. and Saha, K. and Ajoy, A. and Schröder, T. and Englund, D. and Jelezko, F. and Walsworth, R. and Pacheco, J. L. and Perry, D. L. and Bielejec, E. S. and Cappellaro, P.},
abstractNote = {The practical implementation of quantum technologies such as quantum commu- nication and quantum cryptography relies on the development of indistinguishable, robust, and bright single photon sources that works at room temperature. The silicon- vacancy (SiV-) center in diamond has emerged as a possible candidate for a single photon source with all these characteristics. Unfortunately, due to the high refraction index mismatch between diamond and air, color centers in diamond show low photon out-coupling. This drawback can be overcome by fabrication of photonic structures that improve the in-coupling of excitation laser to the diamond defect as well as the out-coupling emission from the color centers. An additional shortcoming is due to the random localization of native defects in the diamond sample. Here we demonstrate deterministic implantation of Si ions with high conversion effciency to single SiV-, targeted to fabricated nanowires. The co-localization of single SiV- defects with the nanostructures yields a ten times higher light coupling effciency as compared to single SiV- in the bulk. This result, with its intrinsic scalability, enables a new class of devices for integrated photonics and quantum information processing.},
doi = {10.1364/OE.26.000080},
journal = {Optics Express},
number = 1,
volume = 26,
place = {United States},
year = {2018},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1364/OE.26.000080

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Cited by: 5 works
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