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Title: Localization behavior at bound Bi complex states in GaA s 1 - x B i x

While bismuth-related states are known to localize carriers in GaAs 1-xBi x alloys, the localization behavior of distinct Bi pair, triplet and cluster states bound above the valence band is less well understood. We probe localization at three different Bi complex states in dilute GaAs 1-xBi x alloys using magneto-photoluminescence and time-resolved photoluminescence spectroscopy. The mass of electrons Coulomb-bound to holes trapped at Bi pair states is found to increase relative to the average electron mass in the alloy. This increase is attributed to enhanced local compressive strain in the immediate vicinity of the pairs. The dependence of energy transfer between these states on composition is also explored.
Authors:
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Publication Date:
Report Number(s):
NREL/JA-5K00-68789; LA-UR-17-24317
Journal ID: ISSN 2475-9953; PRMHAR
Grant/Contract Number:
AC36-08GO28308; NSF-DMR-1157490; AC52-06NA25396
Type:
Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 1; Journal Issue: 2; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States); Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; isoelectronic impurity; localization; High Magnetic Field Science
OSTI Identifier:
1415125
Alternate Identifier(s):
OSTI ID: 1372728; OSTI ID: 1415386