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This content will become publicly available on December 27, 2018

Title: Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 119; Journal Issue: 26; Related Information: CHORUS Timestamp: 2017-12-27 14:13:46; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1414990