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This content will become publicly available on December 27, 2018

Title: Luminescence of defects in the structural transformation of layered tin dichalcogenides

Authors:
ORCiD logo [1] ;  [2] ;  [3] ;  [4] ;  [5]
  1. Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USA
  2. Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto, Finland
  3. Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto, Finland, Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01314 Dresden, Germany, National University of Science and Technology MISiS, 119049 Moscow, Russia
  4. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
  5. Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USA
Publication Date:
Grant/Contract Number:
SC0016343
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 111 Journal Issue: 26; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1414972