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This content will become publicly available on December 21, 2018

Title: Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN

Authors:
 [1] ;  [2] ;  [2] ;  [2] ;  [2] ;  [1] ;  [1]
  1. Sandia National Laboratories, 7011 East Ave., Livermore, California 94550, USA
  2. Sandia National Laboratories, 1515 Eubank, SE, Albuquerque, New Mexico 87123, USA
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 122; Journal Issue: 23; Related Information: CHORUS Timestamp: 2017-12-21 10:59:18; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1414507