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Title: Exploring the origins of the Dzyaloshinskii-Moriya interaction in MnSi

Abstract

By using magnetization and small-angle neutron scattering (SANS) measurements, we have investigated the magnetic behavior of the Mn1-xIrxSi system to explore the effect of increased carrier density and spin-orbit interaction on the magnetic properties of MnSi. We determine estimates of the spin wave stiffness and the Dzyalloshinski-Moriya (DM) interaction strength and compare with Mn1-xCoxSi and Mn1-xFexSi. Despite the large differences in atomic mass and size of the substituted elements, Mn1-xCoxSi and Mn1-xIrxSi show nearly identical variations in their magnetic properties with substitution. We find a systematic dependence of the transition temperature, the ordered moment, the helix period, and the DM interaction strength with electron count for Mn1-xIrxSi, Mn1-xCoxSi, and Mn1-xFexSi, indicating that the magnetic behavior is primarily dependent upon the additional carrier density, rather than on the mass or size of the substituting species. This indicates that the variation in magnetic properties, including the DM interaction strength, is primarily controlled by the electronic structure, as Co and Ir are isovalent. Our work suggests that although the rigid band model of electronic structure, along with Moriya’s model of weak itinerant magnetism, describes this system surprisingly well, phenomenological models for the DM interaction strength are not adequate to describe this system.

Authors:
 [1];  [2];  [3];  [4];  [1];  [1]
  1. Louisiana State Univ., Baton Rouge, LA (United States). Dept. of Physics and Astronomy
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Louisiana State Univ., Baton Rouge, LA (United States). Dept. of Physics and Astronomy; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  4. Louisiana State Univ., Baton Rouge, LA (United States). Dept. of Chemistry
Publication Date:
Research Org.:
Louisiana State Univ., Baton Rouge, LA (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1414441
Alternate Identifier(s):
OSTI ID: 1414042; OSTI ID: 1423069
Grant/Contract Number:  
SC0012432; AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 96; Journal Issue: 21; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Dhital, C., DeBeer-Schmitt, L., Zhang, Q., Xie, W., Young, D. P., and DiTusa, J. F. Exploring the origins of the Dzyaloshinskii-Moriya interaction in MnSi. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.96.214425.
Dhital, C., DeBeer-Schmitt, L., Zhang, Q., Xie, W., Young, D. P., & DiTusa, J. F. Exploring the origins of the Dzyaloshinskii-Moriya interaction in MnSi. United States. doi:10.1103/PhysRevB.96.214425.
Dhital, C., DeBeer-Schmitt, L., Zhang, Q., Xie, W., Young, D. P., and DiTusa, J. F. Tue . "Exploring the origins of the Dzyaloshinskii-Moriya interaction in MnSi". United States. doi:10.1103/PhysRevB.96.214425. https://www.osti.gov/servlets/purl/1414441.
@article{osti_1414441,
title = {Exploring the origins of the Dzyaloshinskii-Moriya interaction in MnSi},
author = {Dhital, C. and DeBeer-Schmitt, L. and Zhang, Q. and Xie, W. and Young, D. P. and DiTusa, J. F.},
abstractNote = {By using magnetization and small-angle neutron scattering (SANS) measurements, we have investigated the magnetic behavior of the Mn1-xIrxSi system to explore the effect of increased carrier density and spin-orbit interaction on the magnetic properties of MnSi. We determine estimates of the spin wave stiffness and the Dzyalloshinski-Moriya (DM) interaction strength and compare with Mn1-xCoxSi and Mn1-xFexSi. Despite the large differences in atomic mass and size of the substituted elements, Mn1-xCoxSi and Mn1-xIrxSi show nearly identical variations in their magnetic properties with substitution. We find a systematic dependence of the transition temperature, the ordered moment, the helix period, and the DM interaction strength with electron count for Mn1-xIrxSi, Mn1-xCoxSi, and Mn1-xFexSi, indicating that the magnetic behavior is primarily dependent upon the additional carrier density, rather than on the mass or size of the substituting species. This indicates that the variation in magnetic properties, including the DM interaction strength, is primarily controlled by the electronic structure, as Co and Ir are isovalent. Our work suggests that although the rigid band model of electronic structure, along with Moriya’s model of weak itinerant magnetism, describes this system surprisingly well, phenomenological models for the DM interaction strength are not adequate to describe this system.},
doi = {10.1103/PhysRevB.96.214425},
journal = {Physical Review B},
number = 21,
volume = 96,
place = {United States},
year = {2017},
month = {12}
}

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