skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Growth and Luminescence of Polytypic InP on Epitaxial Graphene

Authors:
 [1];  [1];  [2];  [1];  [3];  [4];  [5];  [6];  [6];  [1];  [6];  [2];  [1]
  1. Department of Engineering Physics, Polytechnique Montreal, C.P. 6079, succ. Centre-Ville Montreal QC H3C 3A7 Canada
  2. Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison WI 53706 USA
  3. Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra 08193 Barcelona Catalonia Spain
  4. Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra 08193 Barcelona Catalonia Spain, ICREA, Pg. Lluís Companys 23 08010 Barcelona Catalonia Spain
  5. DELMIC BV, Thijsseweg 11 2629 JA Delft The Netherlands
  6. Department of Chemistry, University of Montreal, C.P. 6128 succ. Centre-Ville Montreal QC H3C 3J7 Canada
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1414319
Grant/Contract Number:  
SC0016007
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Functional Materials
Additional Journal Information:
Journal Name: Advanced Functional Materials Journal Volume: 28 Journal Issue: 8; Journal ID: ISSN 1616-301X
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Mukherjee, Samik, Nateghi, Nima, Jacobberger, Robert M., Bouthillier, Etienne, de la Mata, Maria, Arbiol, Jordi, Coenen, Toon, Cardinal, Dhan, Levesque, Pierre, Desjardins, Patrick, Martel, Richard, Arnold, Micheal S., and Moutanabbir, Oussama. Growth and Luminescence of Polytypic InP on Epitaxial Graphene. Germany: N. p., 2017. Web. doi:10.1002/adfm.201705592.
Mukherjee, Samik, Nateghi, Nima, Jacobberger, Robert M., Bouthillier, Etienne, de la Mata, Maria, Arbiol, Jordi, Coenen, Toon, Cardinal, Dhan, Levesque, Pierre, Desjardins, Patrick, Martel, Richard, Arnold, Micheal S., & Moutanabbir, Oussama. Growth and Luminescence of Polytypic InP on Epitaxial Graphene. Germany. doi:10.1002/adfm.201705592.
Mukherjee, Samik, Nateghi, Nima, Jacobberger, Robert M., Bouthillier, Etienne, de la Mata, Maria, Arbiol, Jordi, Coenen, Toon, Cardinal, Dhan, Levesque, Pierre, Desjardins, Patrick, Martel, Richard, Arnold, Micheal S., and Moutanabbir, Oussama. Wed . "Growth and Luminescence of Polytypic InP on Epitaxial Graphene". Germany. doi:10.1002/adfm.201705592.
@article{osti_1414319,
title = {Growth and Luminescence of Polytypic InP on Epitaxial Graphene},
author = {Mukherjee, Samik and Nateghi, Nima and Jacobberger, Robert M. and Bouthillier, Etienne and de la Mata, Maria and Arbiol, Jordi and Coenen, Toon and Cardinal, Dhan and Levesque, Pierre and Desjardins, Patrick and Martel, Richard and Arnold, Micheal S. and Moutanabbir, Oussama},
abstractNote = {},
doi = {10.1002/adfm.201705592},
journal = {Advanced Functional Materials},
number = 8,
volume = 28,
place = {Germany},
year = {2017},
month = {12}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1002/adfm.201705592

Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Study on the Surface Energy of Graphene by Contact Angle Measurements
journal, July 2014

  • Kozbial, Andrew; Li, Zhiting; Conaway, Caitlyn
  • Langmuir, Vol. 30, Issue 28
  • DOI: 10.1021/la5018328

Heteroepitaxy of Layered Semiconductor GaSe on a GaAs(111)B Surface
journal, August 1991

  • Ueno, Keiji; Abe, Hideki; Saiki, Koichiro
  • Japanese Journal of Applied Physics, Vol. 30, Issue Part 2, No. 8A
  • DOI: 10.1143/JJAP.30.L1352

Direct Observation of Charge-Carrier Heating at WZ–ZB InP Nanowire Heterojunctions
journal, August 2013

  • Yong, Chaw Keong; Wong-Leung, Jennifer; Joyce, Hannah J.
  • Nano Letters, Vol. 13, Issue 9
  • DOI: 10.1021/nl402050q

Direct oriented growth of armchair graphene nanoribbons on germanium
journal, August 2015

  • Jacobberger, Robert M.; Kiraly, Brian; Fortin-Deschenes, Matthieu
  • Nature Communications, Vol. 6, Article No. 8006
  • DOI: 10.1038/ncomms9006

Graphene CVD: Interplay Between Growth and Etching on Morphology and Stacking by Hydrogen and Oxidizing Impurities
journal, September 2014

  • Choubak, Saman; Levesque, Pierre L.; Gaufres, Etienne
  • The Journal of Physical Chemistry C, Vol. 118, Issue 37
  • DOI: 10.1021/jp5070215

Spin qubits in graphene quantum dots
journal, February 2007

  • Trauzettel, Björn; Bulaev, Denis V.; Loss, Daniel
  • Nature Physics, Vol. 3, Issue 3
  • DOI: 10.1038/nphys544

Effect of Twinning on the Photoluminescence and Photoelectrochemical Properties of Indium Phosphide Nanowires Grown on Silicon (111)
journal, December 2008

  • Woo, Robyn L.; Xiao, Rui; Kobayashi, Yoji
  • Nano Letters, Vol. 8, Issue 12
  • DOI: 10.1021/nl802433u

The impact of graphene properties on GaN and AlN nucleation
journal, April 2015


Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
journal, March 2013

  • Butler, Sheneve Z.; Hollen, Shawna M.; Cao, Linyou
  • ACS Nano, Vol. 7, Issue 4, p. 2898-2926
  • DOI: 10.1021/nn400280c

Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene
journal, September 2014

  • Kim, Jeehwan; Bayram, Can; Park, Hongsik
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms5836

Van der Waals heterostructures
journal, July 2013

  • Geim, A. K.; Grigorieva, I. V.
  • Nature, Vol. 499, Issue 7459, p. 419-425
  • DOI: 10.1038/nature12385

Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer
journal, September 2015


Flexible Inorganic Nanostructure Light-Emitting Diodes Fabricated on Graphene Films
journal, September 2011

  • Lee, Chul-Ho; Kim, Yong-Jin; Hong, Young Joon
  • Advanced Materials, Vol. 23, Issue 40
  • DOI: 10.1002/adma.201102407

Twinning superlattices in indium phosphide nanowires
journal, November 2008

  • Algra, Rienk E.; Verheijen, Marcel A.; Borgström, Magnus T.
  • Nature, Vol. 456, Issue 7220
  • DOI: 10.1038/nature07570

van der Waals Epitaxy of InAs Nanowires Vertically Aligned on Single-Layer Graphene
journal, February 2012

  • Hong, Young Joon; Lee, Wi Hyoung; Wu, Yaping
  • Nano Letters, Vol. 12, Issue 3
  • DOI: 10.1021/nl204109t

Coherent Twinning Phenomena:  Towards Twinning Superlattices in III−V Semiconducting Nanowires
journal, December 2006

  • Xiong, Qihua; Wang, J.; Eklund, P. C.
  • Nano Letters, Vol. 6, Issue 12
  • DOI: 10.1021/nl0616983

Growth thermodynamics of nanowires and its application to polytypism of zinc blende III-V nanowires
journal, January 2008


Interplay between crystal phase purity and radial growth in InP nanowires
journal, September 2012


Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer
journal, August 2014

  • Alaskar, Yazeed; Arafin, Shamsul; Wickramaratne, Darshana
  • Advanced Functional Materials, Vol. 24, Issue 42
  • DOI: 10.1002/adfm.201400960

Heteroepitaxial Growth of Layered Semiconductor GaSe on a Hydrogen-Terminated Si(111) Surface *
journal, March 1993

  • Liu, Kuang-Yu; Ueno, Keiji; Fujikawa, Yasunori
  • Japanese Journal of Applied Physics, Vol. 32, Issue Part 2, No. 3B
  • DOI: 10.1143/JJAP.32.L434

Temperature Dependence of Interband Transitions in Wurtzite InP Nanowires
journal, February 2015


Optical Properties of Rotationally Twinned InP Nanowire Heterostructures
journal, March 2008

  • Bao, Jiming; Bell, David C.; Capasso, Federico
  • Nano Letters, Vol. 8, Issue 3
  • DOI: 10.1021/nl072921e

High-quality GaN films grown on chemical vapor-deposited graphene films
journal, September 2012

  • Chung, Kunook; In Park, Suk; Baek, Hyeonjun
  • NPG Asia Materials, Vol. 4, Issue 9
  • DOI: 10.1038/am.2012.45

Chemical trend of band offsets at wurtzite/zinc-blende heterocrystalline semiconductor interfaces
journal, February 1994


Quantifying coherent and incoherent cathodoluminescence in semiconductors and metals
journal, June 2014

  • Brenny, B. J. M.; Coenen, T.; Polman, A.
  • Journal of Applied Physics, Vol. 115, Issue 24
  • DOI: 10.1063/1.4885426

Recent developments and future directions in the growth of nanostructures by van der Waals epitaxy
journal, January 2013

  • Bakti Utama, Muhammad Iqbal; Zhang, Qing; Zhang, Jun
  • Nanoscale, Vol. 5, Issue 9
  • DOI: 10.1039/c3nr34011b

Equilibrium shapes and energies of coherent strained InP islands
journal, December 1999


Epitaxial growth of metal‐phthalocyanines on selenium‐terminated GaAs(111) surfaces
journal, April 1994

  • Yamamoto, Hideki; Tada, Hirokazu; Kawaguchi, Takafumi
  • Applied Physics Letters, Vol. 64, Issue 16
  • DOI: 10.1063/1.111695

Recombination dynamics in wurtzite InP nanowires
journal, June 2008


Graphene photonics and optoelectronics
journal, August 2010


Structural Transition in Indium Phosphide Nanowires
journal, May 2010

  • Kitauchi, Yusuke; Kobayashi, Yasunori; Tomioka, Katsuhiro
  • Nano Letters, Vol. 10, Issue 5
  • DOI: 10.1021/nl1000407

In x Ga 1– x As Nanowire Growth on Graphene: van der Waals Epitaxy Induced Phase Segregation
journal, February 2013

  • Mohseni, Parsian K.; Behnam, Ashkan; Wood, Joshua D.
  • Nano Letters, Vol. 13, Issue 3
  • DOI: 10.1021/nl304569d

Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires
journal, December 2007

  • Mishra, A.; Titova, L. V.; Hoang, T. B.
  • Applied Physics Letters, Vol. 91, Issue 26
  • DOI: 10.1063/1.2828034

Twinning-, Polytypism-, and Polarity-Induced Morphological Modulation in Nonplanar Nanostructures with van der Waals Epitaxy
journal, October 2012

  • Utama, Muhammad Iqbal Bakti; de la Mata, Maria; Magen, Cesar
  • Advanced Functional Materials, Vol. 23, Issue 13
  • DOI: 10.1002/adfm.201202027

Quantitative measurement of displacement and strain fields from HREM micrographs
journal, August 1998


Fabrication and characterization of heterostructures with subnanometer thickness
journal, October 1984


InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit
journal, January 2013


Room-temperature InP distributed feedback laser array directly grown on silicon
journal, October 2015


Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures
journal, December 2009


Electronic and Mechanical Properties of Graphene–Germanium Interfaces Grown by Chemical Vapor Deposition
journal, October 2015


Angle-resolved cathodoluminescence spectroscopy
journal, October 2011

  • Coenen, Toon; Vesseur, Ernst Jan R.; Polman, Albert
  • Applied Physics Letters, Vol. 99, Issue 14
  • DOI: 10.1063/1.3644985

Vertically Aligned GaAs Nanowires on Graphite and Few-Layer Graphene: Generic Model and Epitaxial Growth
journal, January 2012

  • Munshi, A. Mazid; Dheeraj, Dasa L.; Fauske, Vidar T.
  • Nano Letters, Vol. 12, Issue 9
  • DOI: 10.1021/nl3018115

Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer
journal, May 2016


Epitaxial growth of vanadyl‐phthalocyanine ultrathin films on hydrogen‐terminated Si(111) surfaces
journal, October 1992

  • Tada, Hirokazu; Kawaguchi, Takafumi; Koma, Atsushi
  • Applied Physics Letters, Vol. 61, Issue 17
  • DOI: 10.1063/1.108346

Metastable Growth of Pure Wurtzite InGaAs Microstructures
journal, July 2014

  • Ng, Kar Wei; Ko, Wai Son; Lu, Fanglu
  • Nano Letters, Vol. 14, Issue 8
  • DOI: 10.1021/nl501887f