Low-temperature conducting state in two candidate topological Kondo insulators: and
We have investigated the low temperature conducting state of two Kondo insulators, SmB 6 and Ce 3Bi 4Pt 3, which have been theoretically predicted to host topological surface states. Through comparison of the speci c heat of as-grown and powdered single crystals of SmB 6, we show that the residual term that is linear in temperature is not dominated by any surface state contribution, but rather is a bulk property. In Ce 3Bi 4Pt 3, we find that the Hall coefficient is independent of sample thickness, which indicates that conduction at low temperatures is dominated by the bulk of the sample, and not by a surface state. The low temperature resistivity of Ce 3Bi 4Pt 3 is found to monotonically decrease with low concentrations of disorder introduced through ion-irradiation. This is in contrast to SmB 6, which is again indicative of the contrasting origins of the low temperature conduction. In SmB 6, we also show that the effect of low concentrations of irradiation damage of the surface with Fe + ions is qualitatively consistent with damage with non-magnetic ions.
- Authors:
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- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Univ. of California, Irvine, CA (United States)
- Publication Date:
- Report Number(s):
- LA-UR-16-22744
Journal ID: ISSN 2469-9950; PRBMDO; TRN: US1800626
- Grant/Contract Number:
- AC52-06NA25396
- Type:
- Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 94; Journal Issue: 3; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society (APS)
- Research Org:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Org:
- USDOE
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
- OSTI Identifier:
- 1414091
- Alternate Identifier(s):
- OSTI ID: 1261700
- Free Publicly Accessible Full Text
- Accepted Manuscript (Publisher)
-
Accepted Manuscript (DOE)
- Publisher's Version of Record
- https://doi.org/10.1103/PhysRevB.94.035127