Pseudospin Electronics in Phosphorene Nanoribbons
Abstract
Zigzag phosphorene nanoribbons are metallic owing to the edge states, whose energies are inside the gap and far from the bulk bands. We show that -- through electrical manipulation of edge states -- electron propagation can be restricted to one of the ribbon edges or, in case of bilayer phosphorene nanoribbons, to one of the layers. This finding implies that edge and layer can be regarded as tunable equivalents of the spin-one-half degree of freedom, i.e., the pseudospin. In both layer- and edge-pseudospin schemes, we propose and characterize a pseudospin field-effect transistor, which can generate pseudospin-polarized current. Also, we propose edge- and layer-pseudospin valves that operate analogously to conventional spin valves. The performance of valves in each pseudospin scheme is benchmarked by the pseudomagnetoresistance (PMR) ratio. The edge-pseudospin valve shows a nearly perfect PMR, with remarkable robustness against device parameters and disorder. Furthermore, these results may initiate new developments in pseudospin electronics.
- Authors:
-
- Univ. of Wisconsin-Madison, Madison, WI (United States)
- Publication Date:
- Research Org.:
- Univ. of Wisconsin, Madison, WI (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE
- OSTI Identifier:
- 1434273
- Alternate Identifier(s):
- OSTI ID: 1414046
- Grant/Contract Number:
- SC0008712
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Applied
- Additional Journal Information:
- Journal Volume: 8; Journal Issue: 6; Journal ID: ISSN 2331-7019
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY
Citation Formats
Soleimanikahnoj, S., and Knezevic, I. Pseudospin Electronics in Phosphorene Nanoribbons. United States: N. p., 2017.
Web. doi:10.1103/PhysRevApplied.8.064021.
Soleimanikahnoj, S., & Knezevic, I. Pseudospin Electronics in Phosphorene Nanoribbons. United States. https://doi.org/10.1103/PhysRevApplied.8.064021
Soleimanikahnoj, S., and Knezevic, I. Tue .
"Pseudospin Electronics in Phosphorene Nanoribbons". United States. https://doi.org/10.1103/PhysRevApplied.8.064021. https://www.osti.gov/servlets/purl/1434273.
@article{osti_1434273,
title = {Pseudospin Electronics in Phosphorene Nanoribbons},
author = {Soleimanikahnoj, S. and Knezevic, I.},
abstractNote = {Zigzag phosphorene nanoribbons are metallic owing to the edge states, whose energies are inside the gap and far from the bulk bands. We show that -- through electrical manipulation of edge states -- electron propagation can be restricted to one of the ribbon edges or, in case of bilayer phosphorene nanoribbons, to one of the layers. This finding implies that edge and layer can be regarded as tunable equivalents of the spin-one-half degree of freedom, i.e., the pseudospin. In both layer- and edge-pseudospin schemes, we propose and characterize a pseudospin field-effect transistor, which can generate pseudospin-polarized current. Also, we propose edge- and layer-pseudospin valves that operate analogously to conventional spin valves. The performance of valves in each pseudospin scheme is benchmarked by the pseudomagnetoresistance (PMR) ratio. The edge-pseudospin valve shows a nearly perfect PMR, with remarkable robustness against device parameters and disorder. Furthermore, these results may initiate new developments in pseudospin electronics.},
doi = {10.1103/PhysRevApplied.8.064021},
journal = {Physical Review Applied},
number = 6,
volume = 8,
place = {United States},
year = {Tue Dec 19 00:00:00 EST 2017},
month = {Tue Dec 19 00:00:00 EST 2017}
}
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Cited by: 17 works
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Figures / Tables:
FIG. 1: Schematic of a bilayer ZPNR. (a) Top view: The left and the right edges are zigzag. The gray rectangle denotes a unit cell for this ZPNR. (b) Side view: a = 3.31 Å is the length of the unit cell.
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