Ion-gel-gating-induced oxygen vacancy formation in epitaxial La0.5Sr0.5CoO3–δ films from in operando x-ray and neutron scattering

Walter, Jeff; Yu, Guichuan; Yu, Biqiong; Grutter, Alexander; Kirby, Brian; Borchers, Julie; Zhang, Zhan; Zhou, Hua; Birol, Turan; Greven, Martin; Leighton, Chris

doi:10.1103/PhysRevMaterials.1.071403

Title: Ion-gel-gating-induced oxygen vacancy formation in epitaxial $L a_{0.5} S r_{0.5} Co O_{3 - δ}$ films from in operando x-ray and neutron scattering

Abstract

Ionic-liquid/gel-based transistors have emerged as a potentially ideal means to accumulate high charge-carrier densities at the surfaces of materials such as oxides, enabling control over electronic phase transitions. Substantial gaps remain in the understanding of gating mechanisms, however, particularly with respect to charge carrier vs oxygen defect creation, one contributing factor being the dearth of experimental probes beyond electronic transport. Here we demonstrate the use of synchrotron hard x-ray diffraction and polarized neutron reflectometry as in operando probes of ion-gel transistors based on ferromagnetic La_0.5Sr_0.5CoO_3-δ. An asymmetric gate-bias response is confirmed to derive from electrostatic hole accumulation at negative gate bias vs oxygen vacancy formation at positive bias. The latter is detected via a large gate-induced lattice expansion (up to 1%), complementary bulk measurements and density functional calculations enabling quantification of the bias-dependent oxygen vacancy density. Remarkably, the gate-induced oxygen vacancies proliferate through the entire thickness of 30-40-unit-cell-thick films, quantitatively accounting for changes in the magnetization depth profile. In conclusion, these results directly elucidate the issue of electrostatic vs redox-based response in electrolyte-gated oxides, also demonstrating powerful approaches to their in operando investigation.

Authors:

Walter, Jeff ^[1]; Yu, Guichuan ^[1]; Yu, Biqiong ^[1]; Grutter, Alexander ^[2]; Kirby, Brian ^[2]; Borchers, Julie ^[2]; Zhang, Zhan ^[3]; Zhou, Hua ^[3]; Birol, Turan ^[1]; Greven, Martin ^[1]; Leighton, Chris ^[1]

Univ. of Minnesota, Minneapolis, MN (United States)
National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States)
Argonne National Lab. (ANL), Argonne, IL (United States)

Publication Date:: Tue Dec 19 00:00:00 EST 2017

Research Org.:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Org.:: National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1466375

Alternate Identifier(s):: OSTI ID: 1414041

Grant/Contract Number:: AC02-06CH11357; FG02-06ER46275; SC0016371

Resource Type:: Accepted Manuscript

Journal Name:: Physical Review Materials

Additional Journal Information:: Journal Volume: 1; Journal Issue: 7; Journal ID: ISSN 2475-9953

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Walter, Jeff, Yu, Guichuan, Yu, Biqiong, Grutter, Alexander, Kirby, Brian, Borchers, Julie, Zhang, Zhan, Zhou, Hua, Birol, Turan, Greven, Martin, and Leighton, Chris. Ion-gel-gating-induced oxygen vacancy formation in epitaxial La0.5Sr0.5CoO3–δ films from in operando x-ray and neutron scattering.  United States: N. p., 2017. 
Web.  doi:10.1103/PhysRevMaterials.1.071403.

Copy to clipboard


                    Walter, Jeff, Yu, Guichuan, Yu, Biqiong, Grutter, Alexander, Kirby, Brian, Borchers, Julie, Zhang, Zhan, Zhou, Hua, Birol, Turan, Greven, Martin, & Leighton, Chris. Ion-gel-gating-induced oxygen vacancy formation in epitaxial La0.5Sr0.5CoO3–δ films from in operando x-ray and neutron scattering.  United States.  https://doi.org/10.1103/PhysRevMaterials.1.071403

Copy to clipboard


                    Walter, Jeff, Yu, Guichuan, Yu, Biqiong, Grutter, Alexander, Kirby, Brian, Borchers, Julie, Zhang, Zhan, Zhou, Hua, Birol, Turan, Greven, Martin, and Leighton, Chris. Tue .  
"Ion-gel-gating-induced oxygen vacancy formation in epitaxial La0.5Sr0.5CoO3–δ films from in operando x-ray and neutron scattering".  United States.  https://doi.org/10.1103/PhysRevMaterials.1.071403.  https://www.osti.gov/servlets/purl/1466375.

Copy to clipboard


                    
@article{osti_1466375,

  title        = {Ion-gel-gating-induced oxygen vacancy formation in epitaxial La0.5Sr0.5CoO3–δ films from in operando x-ray and neutron scattering},

  author       = {Walter, Jeff and Yu, Guichuan and Yu, Biqiong and Grutter, Alexander and Kirby, Brian and Borchers, Julie and Zhang, Zhan and Zhou, Hua and Birol, Turan and Greven, Martin and Leighton, Chris},

  abstractNote = {Ionic-liquid/gel-based transistors have emerged as a potentially ideal means to accumulate high charge-carrier densities at the surfaces of materials such as oxides, enabling control over electronic phase transitions. Substantial gaps remain in the understanding of gating mechanisms, however, particularly with respect to charge carrier vs oxygen defect creation, one contributing factor being the dearth of experimental probes beyond electronic transport. Here we demonstrate the use of synchrotron hard x-ray diffraction and polarized neutron reflectometry as in operando probes of ion-gel transistors based on ferromagnetic La0.5Sr0.5CoO3-δ. An asymmetric gate-bias response is confirmed to derive from electrostatic hole accumulation at negative gate bias vs oxygen vacancy formation at positive bias. The latter is detected via a large gate-induced lattice expansion (up to 1%), complementary bulk measurements and density functional calculations enabling quantification of the bias-dependent oxygen vacancy density. Remarkably, the gate-induced oxygen vacancies proliferate through the entire thickness of 30-40-unit-cell-thick films, quantitatively accounting for changes in the magnetization depth profile. In conclusion, these results directly elucidate the issue of electrostatic vs redox-based response in electrolyte-gated oxides, also demonstrating powerful approaches to their in operando investigation.},

  doi          = {10.1103/PhysRevMaterials.1.071403},

  journal      = {Physical Review Materials},

  number       = 7,

  volume       = 1,

  place        = {United States},

  year         = {Tue Dec 19 00:00:00 EST 2017},

  month        = {Tue Dec 19 00:00:00 EST 2017}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1103/PhysRevMaterials.1.071403

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 44 works

Citation information provided by
Web of Science

Figures / Tables:

Fig. 1: (more » a) Device and experimental setup schematic for synchrotron x-ray diffraction on epitaxial

L a_{0.5} S r_{0.5} Co O_{3 - δ}

films. (b) Gate-bias-(

V_{g}

)-dependent specular diffraction (00L) scans, where L is in reciprocal lattice units (r.l.u.) of the LAO substrate. (c) Change in

c

-axis lattice parameter (

Δ c_{op}

, left axis) and cell volume (ΔV, right axis) with

V_{g}

. (d) Change in Scherrer thickness (

Δ t_{s}

, left axis), and

t_{s}

itself (right axis), vs

V_{g}

. (e) Change in film thickness from Laue fringes (

Δ t_{f}

), and

t_{f}

itself (right axis), vs

V_{g}

. Blue dotted lines are guides to the eye.

All figures and tables (3 total)

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Crystal-Facet-Dependent Metallization in Electrolyte-Gated Rutile TiO ₂ Single Crystals
journal, August 2013

Schladt, Thomas D.; Graf, Tanja; Aetukuri, Nagaphani B.
ACS Nano, Vol. 7, Issue 9
DOI: 10.1021/nn403340d

Oxygen reaction on strontium-doped lanthanum cobaltite dense electrodes at intermediate temperatures
journal, February 2001

Ringuedé, A.
Solid State Ionics, Vol. 139, Issue 3-4
DOI: 10.1016/S0167-2738(01)00692-0

Nonstoichiometry of the perovskite-type oxides La1−xSrxCoO3−δ
journal, May 1989

Mizusaki, Junichiro; Mima, Yasuo; Yamauchi, Shigeru
Journal of Solid State Chemistry, Vol. 80, Issue 1
DOI: 10.1016/0022-4596(89)90036-4

Oxygen stoichiometry, crystal structure, and magnetism of La _0.5 Sr _0.5 CoO ₃
journal, August 2004

Haggerty, Ryan P.; Seshadri, Ram
Journal of Physics: Condensed Matter, Vol. 16, Issue 36
DOI: 10.1088/0953-8984/16/36/013

2D Insulator-Metal Transition in Aerosol-Jet-Printed Electrolyte-Gated Indium Oxide Thin Film Transistors
journal, February 2017

Xie, Wei; Zhang, Xin; Leighton, Chris
Advanced Electronic Materials, Vol. 3, Issue 3
DOI: 10.1002/aelm.201600369

Electrostatic versus Electrochemical Doping and Control of Ferromagnetism in Ion-Gel-Gated Ultrathin La _0.5 Sr _0.5 CoO _3−δ
journal, July 2016

Walter, Jeff; Wang, Helin; Luo, Bing
ACS Nano, Vol. 10, Issue 8
DOI: 10.1021/acsnano.6b03403

Reversible redox reactions in an epitaxially stabilized SrCoOx oxygen sponge
journal, August 2013

Jeen, Hyoungjeen; Choi, Woo Seok; Biegalski, Michael D.
Nature Materials, Vol. 12, Issue 11
DOI: 10.1038/nmat3736

Gate-tunable gigantic lattice deformation in VO ₂
journal, January 2014

Okuyama, D.; Nakano, M.; Takeshita, S.
Applied Physics Letters, Vol. 104, Issue 2
DOI: 10.1063/1.4861901

Lattice mismatch accommodation via oxygen vacancy ordering in epitaxial La _0.5 Sr _0.5 CoO _3-δ thin films
journal, July 2013

Gazquez, J.; Bose, Shameek; Sharma, M.
APL Materials, Vol. 1, Issue 1
DOI: 10.1063/1.4809547

Low-Temperature Transport Properties of Holes Introduced by Ionic Liquid Gating in Hydrogen-Terminated Diamond Surfaces
journal, July 2013

Yamaguchi, Takahide; Watanabe, Eiichiro; Osato, Hirotaka
Journal of the Physical Society of Japan, Vol. 82, Issue 7
DOI: 10.7566/JPSJ.82.074718

Insulator to metal transition in WO3 induced by electrolyte gating
journal, July 2017

Leng, X.; Pereiro, J.; Strle, J.
npj Quantum Materials, Vol. 2, Issue 1
DOI: 10.1038/s41535-017-0039-2

Collective bulk carrier delocalization driven by electrostatic surface charge accumulation
journal, July 2012

Nakano, M.; Shibuya, K.; Okuyama, D.
Nature, Vol. 487, Issue 7408
DOI: 10.1038/nature11296

Cobalt spin states and hyperfine interactions in ${LaCoO}_{3}$ investigated by $LDA + U$ calculations
journal, September 2010

Hsu, Han; Blaha, Peter; Wentzcovitch, Renata M.
Physical Review B, Vol. 82, Issue 10
DOI: 10.1103/PhysRevB.82.100406

Suppression of Metal-Insulator Transition in VO2 by Electric Field-Induced Oxygen Vacancy Formation
journal, March 2013

Jeong, J.; Aetukuri, N.; Graf, T.
Science, Vol. 339, Issue 6126
DOI: 10.1126/science.1230512

Discovery of superconductivity in KTaO3 by electrostatic carrier doping
journal, May 2011

Ueno, K.; Nakamura, S.; Shimotani, H.
Nature Nanotechnology, Vol. 6, Issue 7
DOI: 10.1038/nnano.2011.78

Studies on room-temperature electric-field effect in ionic-liquid gated VO ₂ three-terminal devices
journal, January 2012

Yang, Zheng; Zhou, You; Ramanathan, Shriram
Journal of Applied Physics, Vol. 111, Issue 1
DOI: 10.1063/1.3665399

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996

Kresse, G.; Furthmüller, J.
Physical Review B, Vol. 54, Issue 16, p. 11169-11186
DOI: 10.1103/PhysRevB.54.11169

Superconducting Dome in a Gate-Tuned Band Insulator
journal, November 2012

Ye, J. T.; Zhang, Y. J.; Akashi, R.
Science, Vol. 338, Issue 6111
DOI: 10.1126/science.1228006

Electrostatic modification of novel materials
journal, November 2006

Ahn, C. H.; Bhattacharya, A.; Di Ventra, M.
Reviews of Modern Physics, Vol. 78, Issue 4, p. 1185-1212
DOI: 10.1103/RevModPhys.78.1185

Electric-Field Control of the Metal-Insulator Transition in Ultrathin NdNiO3 Films
journal, October 2010

Scherwitzl, Raoul; Zubko, Pavlo; Lezama, I. Gutierrez
Advanced Materials, Vol. 22, Issue 48
DOI: 10.1002/adma.201003241

Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO ₃ /NdGaO ₃ heterostructures
journal, May 2017

Dong, Yongqi; Xu, Haoran; Luo, Zhenlin
APL Materials, Vol. 5, Issue 5
DOI: 10.1063/1.4983617

Superconductor–insulator transition in La2 − xSr x CuO4 at the pair quantum resistance
journal, April 2011

Bollinger, A. T.; Dubuis, G.; Yoon, J.
Nature, Vol. 472, Issue 7344
DOI: 10.1038/nature09998

Electrically Induced Ferromagnetism at Room Temperature in Cobalt-Doped Titanium Dioxide
journal, May 2011

Yamada, Y.; Ueno, K.; Fukumura, T.
Science, Vol. 332, Issue 6033
DOI: 10.1126/science.1202152

Electric-field-induced superconductivity in an insulator
journal, October 2008

Ueno, K.; Nakamura, S.; Shimotani, H.
Nature Materials, Vol. 7, Issue 11, p. 855-858
DOI: 10.1038/nmat2298

“Cut and Stick” Rubbery Ion Gels as High Capacitance Gate Dielectrics
journal, July 2012

Lee, Keun Hyung; Kang, Moon Sung; Zhang, Sipei
Advanced Materials, Vol. 24, Issue 32
DOI: 10.1002/adma.201200950

Large Electric Field Effect in Electrolyte-Gated Manganites
journal, March 2009

Dhoot, Anoop Singh; Israel, Casey; Moya, Xavier
Physical Review Letters, Vol. 102, Issue 13
DOI: 10.1103/PhysRevLett.102.136402

Glassy ferromagnetism and magnetic phase separation in ${La}_{1 - x} {Sr}_{x} {CoO}_{3}$
journal, May 2003

Wu, J.; Leighton, C.
Physical Review B, Vol. 67, Issue 17, Article No. 174408
DOI: 10.1103/PhysRevB.67.174408

Accessing the transport properties of graphene and its multilayers at high carrier density
journal, July 2011

Ye, Jianting; Craciun, Monica F.; Koshino, Mikito
Proceedings of the National Academy of Sciences, Vol. 108, Issue 32
DOI: 10.1073/pnas.1018388108

Ab initiomolecular dynamics for liquid metals
journal, January 1993

Kresse, G.; Hafner, J.
Physical Review B, Vol. 47, Issue 1, p. 558-561
DOI: 10.1103/PhysRevB.47.558

In operando evidence of deoxygenation in ionic liquid gating of YBa ₂ Cu ₃ O _7-X
journal, December 2016

Perez-Muñoz, Ana M.; Schio, Pedro; Poloni, Roberta
Proceedings of the National Academy of Sciences, Vol. 114, Issue 2
DOI: 10.1073/pnas.1613006114

Direct real space observation of magneto-electronic inhomogeneity in ultra-thin film La0.5Sr0.5CoO3−δ on SrTiO3(001)
journal, September 2014

Kelly, S.; Galli, F.; Aarts, J.
Applied Physics Letters, Vol. 105, Issue 11
DOI: 10.1063/1.4896283

High-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic Liquids
journal, April 2009

Yuan, Hongtao; Shimotani, Hidekazu; Tsukazaki, Atsushi
Advanced Functional Materials, Vol. 19, Issue 7
DOI: 10.1002/adfm.200801633

High Conductance 2D Transport around the Hall Mobility Peak in Electrolyte-Gated Rubrene Crystals
journal, December 2014

Xie, Wei; Wang, Shun; Zhang, Xin
Physical Review Letters, Vol. 113, Issue 24
DOI: 10.1103/PhysRevLett.113.246602

Oxygen Displacement in Cuprates under Ionic Liquid Field-Effect Gating
journal, August 2016

Dubuis, Guy; Yacoby, Yizhak; Zhou, Hua
Scientific Reports, Vol. 6, Issue 1
DOI: 10.1038/srep32378

Chemically Driven Nanoscopic Magnetic Phase Separation at the SrTiO3(001)/La1-xSrxCoO3 Interface
journal, April 2011

Torija, Maria A.; Sharma, Manish; Gazquez, Jaume
Advanced Materials, Vol. 23, Issue 24
DOI: 10.1002/adma.201100417

Suppression of Ionic Liquid Gate-Induced Metallization of SrTiO ₃ (001) by Oxygen
journal, September 2013

Li, Mingyang; Han, Wei; Jiang, Xin
Nano Letters, Vol. 13, Issue 10
DOI: 10.1021/nl402088f

Modulation of the Electrical Properties of VO ₂ Nanobeams Using an Ionic Liquid as a Gating Medium
journal, May 2012

Ji, Heng; Wei, Jiang; Natelson, Douglas
Nano Letters, Vol. 12, Issue 6
DOI: 10.1021/nl300741h

Phase-sensitive specular neutron reflectometry for imaging the nanometer scale composition depth profile of thin-film materials
journal, February 2012

Kirby, B. J.; Kienzle, P. A.; Maranville, B. B.
Current Opinion in Colloid & Interface Science, Vol. 17, Issue 1
DOI: 10.1016/j.cocis.2011.11.001

Hopping transport and the Hall effect near the insulator–metal transition in electrochemically gated poly(3-hexylthiophene) transistors
journal, January 2012

Wang, Shun; Ha, Mingjing; Manno, Michael
Nature Communications, Vol. 3, Issue 1
DOI: 10.1038/ncomms2213

Electrostatic Gating of Ultrathin Films
journal, July 2014

Goldman, A. M.
Annual Review of Materials Research, Vol. 44, Issue 1
DOI: 10.1146/annurev-matsci-070813-113407

Electric-field control of tri-state phase transformation with a selective dual-ion switch
journal, May 2017

Lu, Nianpeng; Zhang, Pengfei; Zhang, Qinghua
Nature, Vol. 546, Issue 7656
DOI: 10.1038/nature22389

Glass-Like Through-Plane Thermal Conductivity Induced by Oxygen Vacancies in Nanoscale Epitaxial La _0.5 Sr _0.5 CoO ₃₋ _δ
journal, November 2017

Wu, Xuewang; Walter, Jeff; Feng, Tianli
Advanced Functional Materials, Vol. 27, Issue 47
DOI: 10.1002/adfm.201704233

Oxygen transport in La1−xSrxMn1−yCoyO3±δ perovskites Part I. Oxygen tracer diffusion
journal, February 1998

De Souza, R.
Solid State Ionics, Vol. 106, Issue 3-4
DOI: 10.1016/S0167-2738(97)00499-2

Electrostatic Control of the Evolution from a Superconducting Phase to an Insulating Phase in Ultrathin ${YBa}_{2} {Cu}_{3} O_{7 - x}$ Films
journal, July 2011

Leng, Xiang; Garcia-Barriocanal, Javier; Bose, Shameek
Physical Review Letters, Vol. 107, Issue 2
DOI: 10.1103/PhysRevLett.107.027001

Epitaxial La0.5Sr0.5CoO3 thin films: Structure, magnetism, and transport
journal, July 2008

Torija, M. A.; Sharma, M.; Fitzsimmons, M. R.
Journal of Applied Physics, Vol. 104, Issue 2
DOI: 10.1063/1.2955725

Tuning of the metal-insulator transition in electrolyte-gated NdNiO3 thin films
journal, October 2010

Asanuma, S.; Xiang, P. -H.; Yamada, H.
Applied Physics Letters, Vol. 97, Issue 14
DOI: 10.1063/1.3496458

Accessing the transport properties of graphene and its multi-layers at high carrier density
text, January 2010

Ye, J. T.; Craciun, M. F.; Koshino, M.
arXiv
DOI: 10.48550/arxiv.1010.4679

Insulator to Metal Transition in WO$_3$ Induced by Electrolyte Gating
text, January 2017

Leng, X.; Pereiro, J.; Strle, J.
arXiv
DOI: 10.48550/arxiv.1707.05748

Works referencing / citing this record:

Metal Oxide Nanocomposites: A Perspective from Strain, Defect, and Interface
journal, October 2018

Chen, Aiping; Su, Qing; Han, Hyungkyu
Advanced Materials, Vol. 31, Issue 4
DOI: 10.1002/adma.201803241

Voltage‐Control of Magnetism in All‐Solid‐State and Solid/Liquid Magnetoelectric Composites
journal, February 2019

Molinari, Alan; Hahn, Horst; Kruk, Robert
Advanced Materials, Vol. 31, Issue 26
DOI: 10.1002/adma.201806662

Magneto-ionic control of magnetism using a solid-state proton pump
journal, November 2018

Tan, Aik Jun; Huang, Mantao; Avci, Can Onur
Nature Materials, Vol. 18, Issue 1
DOI: 10.1038/s41563-018-0211-5

Electrolyte-based ionic control of functional oxides
journal, December 2018

Leighton, Chris
Nature Materials, Vol. 18, Issue 1
DOI: 10.1038/s41563-018-0246-7

Reversible, Electric-Field Induced Magneto-Ionic Control of Magnetism in Mesoporous Cobalt Ferrite Thin Films
journal, July 2019

Robbennolt, Shauna; Menéndez, Enric; Quintana, Alberto
Scientific Reports, Vol. 9, Issue 1
DOI: 10.1038/s41598-019-46618-6

Electrolyte-gated magnetoelectric actuation: Phenomenology, materials, mechanisms, and prospective applications
journal, March 2019

Navarro-Senent, Cristina; Quintana, Alberto; Menéndez, Enric
APL Materials, Vol. 7, Issue 3
DOI: 10.1063/1.5080284

Dominant role of processing temperature in electric field induced superconductivity in layered ZrNBr
journal, February 2019

Wang, Xinmin; Zhang, Shuai; Fu, Huanyan
New Journal of Physics, Vol. 21, Issue 2
DOI: 10.1088/1367-2630/ab00c1

Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial ${BaSnO}_{3}$
journal, July 2019

Wang, Helin; Walter, Jeff; Ganguly, Koustav
Physical Review Materials, Vol. 3, Issue 7
DOI: 10.1103/physrevmaterials.3.075001

Voltage-Control of Magnetism in All-Solid-State and Solid/Liquid Magnetoelectric Composites
text, January 2019

Molinari, A.; Hahn, H.; Kruk, R.
Karlsruhe
DOI: 10.5445/ir/1000092768

Dominant role of processing temperature in electric field induced superconductivity in layered ZrNBr
text, January 2018

Wang, Xinmin; Zhang, Shuai; Fu, Huanyan
arXiv
DOI: 10.48550/arxiv.1811.02830

Figures / Tables found in this record:

Fig. 1 (p. 2)

Fig. 2 (p. 3)

Fig. 3 (p. 5)

Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.

Similar Records in DOE PAGES and OSTI.GOV collections:

Electrical transport, magnetic, and thermodynamic properties of La-, Pr-, and Nd-doped $BaSn O_{3 - δ}$ single crystals

Journal Article McCalla, Eric ; Phelan, Daniel ; Krogstad, Matthew J. ; ... - Physical Review Materials

Due to outstanding room temperature electron mobility, the wide-gap perovskite semiconductor BaSnO₃ is of high current interest. Although n doping with Sb and O vacancies has been reported, most work has focused solely on La doping. Here we report bulk single crystals of Ba_1–xR_xSnO_3–δ with R = La,Pr, and Nd, as well as unintentionally doped BaSnO_3–δ, thus exploring new rare earth (magnetic) dopants in addition to O vacancy doping. Consistent with recent results on epitaxial films, O vacancies are shown capable of generating mid-10¹⁹cm^–3 Hall electron densities, with single crystal mobilities ~100–150cm²V^–1s^–1. Despite apparent solubility limits below ~0.5at.%, Pr andmore »« less
Cited by 22
https://doi.org/10.1103/PhysRevMaterials.2.084601

Full Text Available
Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial ${BaSnO}_{3}$

Journal Article Wang, Helin ; Walter, Jeff ; Ganguly, Koustav ; ... - Physical Review Materials

The wide gap perovskite semiconductor BaSnO₃ has attracted much interest since the discovery of room temperature electron mobility up to 320 cm² V^-1 s^-1 in bulk crystals. Motivated by applications in oxide heterostructures, rapid progress has been made with BaSnO₃ films, although questions remain regarding transport mechanisms and mobility optimization. Here we report on a detailed study of epitaxial BaSnO₃ electric double layer transistors based on ion gel electrolytes, enabling wide-doping-range studies of transport in single films. The work spans an order of magnitude in initial n doping (similar to 10¹⁹ to 10²⁰ cm^-3, with both oxygen vacancies and La),more »« less
Cited by 19
https://doi.org/10.1103/PhysRevMaterials.3.075001

Full Text Available
Manipulating multiple order parameters via oxygen vacancies: The case of $E u_{0.5} B a_{0.5} Ti O_{3 - δ}$

Journal Article Li, Weiwei ; He, Qian ; Wang, Le ; ... - Physical Review B

Controlling functionalities, such as magnetism or ferroelectricity, by means of oxygen vacancies (more »« less
Cited by 15
https://doi.org/10.1103/PhysRevB.96.115105

Full Text Available
Strain-induced majority carrier inversion in ferromagnetic epitaxial $LaCo O_{3 - δ}$ thin films

Journal Article Chaturvedi, Vipul ; Walter, Jeff ; Paul, Arpita ; ... - Physical Review Materials

Tensile-strained LaCoO_3-δ thin films are ferromagnetic, in sharp contrast to the zero-spin bulk, although no clear consensus has emerged as to the origin of this phenomenon. While magnetism has been heavily studied, relatively little attention has been paid to electronic transport, due to the insulating nature of the strain-stabilized ferromagnetic state. Here, structure, magnetism, and transport are studied in epitaxial LaCoO_3-δ films (10–22-nm thick) on various substrates (from 1.4% compressive to 2.5% tensile strain), using synchrotron x-ray diffraction, scanning probe and transmission electron microscopy, magnetometry, polarized neutron reflectometry, resistivity, and Hall effect. High quality, smooth films are obtained, exhibiting superstructuresmore »« less
Cited by 13
https://doi.org/10.1103/PhysRevMaterials.4.034403

Full Text Available
Electron Transport Properties of ${Al}_{x} {Ga}_{1 - x} N / Ga N$ Transistors Based on First-Principles Calculations and Boltzmann-Equation Monte Carlo Simulations

Journal Article Fang, Jingtian ; Fischetti, Massimo V. ; Schrimpf, Ronald D. ; ... - Physical Review Applied

High-electron-mobility transistors (HEMTs) based on Al_xGa_1–xN/GaN heterostructures have great potential for applications in power electronics and radio frequency applications. Operating under large bias and electric fields, hot electrons are present in the channel where they can activate preexisting benign defects that cause scattering or carrier trapping, resulting in device degradation, such as threshold-voltage shifts and transconductance degradation. We report a comprehensive investigation of the electron transport properties of wurtzite-phase GaN and AlN and of an Al_0.25Ga_0.75N/GaN HEMT by solving the Boltzmann transport equation with a synchronous ensemble Monte Carlo technique and employing first-principles electronic properties, including the full energy bands,more »« less
Cited by 15
https://doi.org/10.1103/PhysRevApplied.11.044045

Full Text Available

Similar Records

Title: Ion-gel-gating-induced oxygen vacancy formation in epitaxial L a 0.5 S r 0.5 Co O 3 – δ films from in operando x-ray and neutron scattering

Abstract

Citation Formats

Figures / Tables:

Crystal-Facet-Dependent Metallization in Electrolyte-Gated Rutile TiO 2 Single Crystals journal, August 2013

Oxygen reaction on strontium-doped lanthanum cobaltite dense electrodes at intermediate temperatures journal, February 2001

Nonstoichiometry of the perovskite-type oxides La1−xSrxCoO3−δ journal, May 1989

Oxygen stoichiometry, crystal structure, and magnetism of La 0.5 Sr 0.5 CoO 3 journal, August 2004

2D Insulator-Metal Transition in Aerosol-Jet-Printed Electrolyte-Gated Indium Oxide Thin Film Transistors journal, February 2017

Electrostatic versus Electrochemical Doping and Control of Ferromagnetism in Ion-Gel-Gated Ultrathin La 0.5 Sr 0.5 CoO 3−δ journal, July 2016

Reversible redox reactions in an epitaxially stabilized SrCoOx oxygen sponge journal, August 2013

Gate-tunable gigantic lattice deformation in VO 2 journal, January 2014

Lattice mismatch accommodation via oxygen vacancy ordering in epitaxial La 0.5 Sr 0.5 CoO 3-δ thin films journal, July 2013

Low-Temperature Transport Properties of Holes Introduced by Ionic Liquid Gating in Hydrogen-Terminated Diamond Surfaces journal, July 2013

Insulator to metal transition in WO3 induced by electrolyte gating journal, July 2017

Collective bulk carrier delocalization driven by electrostatic surface charge accumulation journal, July 2012

Cobalt spin states and hyperfine interactions in LaCoO 3 investigated by LDA + U calculations journal, September 2010

Suppression of Metal-Insulator Transition in VO2 by Electric Field-Induced Oxygen Vacancy Formation journal, March 2013

Discovery of superconductivity in KTaO3 by electrostatic carrier doping journal, May 2011

Studies on room-temperature electric-field effect in ionic-liquid gated VO 2 three-terminal devices journal, January 2012

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal, October 1996

Superconducting Dome in a Gate-Tuned Band Insulator journal, November 2012

Electrostatic modification of novel materials journal, November 2006

Electric-Field Control of the Metal-Insulator Transition in Ultrathin NdNiO3 Films journal, October 2010

Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO 3 /NdGaO 3 heterostructures journal, May 2017

Superconductor–insulator transition in La2 − xSr x CuO4 at the pair quantum resistance journal, April 2011

Electrically Induced Ferromagnetism at Room Temperature in Cobalt-Doped Titanium Dioxide journal, May 2011

Electric-field-induced superconductivity in an insulator journal, October 2008

“Cut and Stick” Rubbery Ion Gels as High Capacitance Gate Dielectrics journal, July 2012

Large Electric Field Effect in Electrolyte-Gated Manganites journal, March 2009

Glassy ferromagnetism and magnetic phase separation in La 1 − x Sr x CoO 3 journal, May 2003

Accessing the transport properties of graphene and its multilayers at high carrier density journal, July 2011

Ab initiomolecular dynamics for liquid metals journal, January 1993

In operando evidence of deoxygenation in ionic liquid gating of YBa 2 Cu 3 O 7-X journal, December 2016

Direct real space observation of magneto-electronic inhomogeneity in ultra-thin film La0.5Sr0.5CoO3−δ on SrTiO3(001) journal, September 2014

High-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic Liquids journal, April 2009

High Conductance 2D Transport around the Hall Mobility Peak in Electrolyte-Gated Rubrene Crystals journal, December 2014

Oxygen Displacement in Cuprates under Ionic Liquid Field-Effect Gating journal, August 2016

Chemically Driven Nanoscopic Magnetic Phase Separation at the SrTiO3(001)/La1-xSrxCoO3 Interface journal, April 2011

Suppression of Ionic Liquid Gate-Induced Metallization of SrTiO 3 (001) by Oxygen journal, September 2013

Modulation of the Electrical Properties of VO 2 Nanobeams Using an Ionic Liquid as a Gating Medium journal, May 2012

Phase-sensitive specular neutron reflectometry for imaging the nanometer scale composition depth profile of thin-film materials journal, February 2012

Hopping transport and the Hall effect near the insulator–metal transition in electrochemically gated poly(3-hexylthiophene) transistors journal, January 2012

Electrostatic Gating of Ultrathin Films journal, July 2014

Electric-field control of tri-state phase transformation with a selective dual-ion switch journal, May 2017

Glass-Like Through-Plane Thermal Conductivity Induced by Oxygen Vacancies in Nanoscale Epitaxial La 0.5 Sr 0.5 CoO 3− δ journal, November 2017

Oxygen transport in La1−xSrxMn1−yCoyO3±δ perovskites Part I. Oxygen tracer diffusion journal, February 1998

Electrostatic Control of the Evolution from a Superconducting Phase to an Insulating Phase in Ultrathin YBa 2 Cu 3 O 7 − x Films journal, July 2011

Epitaxial La0.5Sr0.5CoO3 thin films: Structure, magnetism, and transport journal, July 2008

Tuning of the metal-insulator transition in electrolyte-gated NdNiO3 thin films journal, October 2010

Accessing the transport properties of graphene and its multi-layers at high carrier density text, January 2010

Insulator to Metal Transition in WO$_3$ Induced by Electrolyte Gating text, January 2017

Metal Oxide Nanocomposites: A Perspective from Strain, Defect, and Interface journal, October 2018

Voltage‐Control of Magnetism in All‐Solid‐State and Solid/Liquid Magnetoelectric Composites journal, February 2019

Magneto-ionic control of magnetism using a solid-state proton pump journal, November 2018

Electrolyte-based ionic control of functional oxides journal, December 2018

Reversible, Electric-Field Induced Magneto-Ionic Control of Magnetism in Mesoporous Cobalt Ferrite Thin Films journal, July 2019

Electrolyte-gated magnetoelectric actuation: Phenomenology, materials, mechanisms, and prospective applications journal, March 2019

Dominant role of processing temperature in electric field induced superconductivity in layered ZrNBr journal, February 2019

Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial BaSnO 3 journal, July 2019

Voltage-Control of Magnetism in All-Solid-State and Solid/Liquid Magnetoelectric Composites text, January 2019

Dominant role of processing temperature in electric field induced superconductivity in layered ZrNBr text, January 2018

Title: Ion-gel-gating-induced oxygen vacancy formation in epitaxial $L a_{0.5} S r_{0.5} Co O_{3 - δ}$ films from in operando x-ray and neutron scattering

Crystal-Facet-Dependent Metallization in Electrolyte-Gated Rutile TiO ₂ Single Crystals
journal, August 2013

Oxygen reaction on strontium-doped lanthanum cobaltite dense electrodes at intermediate temperatures
journal, February 2001

Nonstoichiometry of the perovskite-type oxides La1−xSrxCoO3−δ
journal, May 1989

Oxygen stoichiometry, crystal structure, and magnetism of La _0.5 Sr _0.5 CoO ₃
journal, August 2004

2D Insulator-Metal Transition in Aerosol-Jet-Printed Electrolyte-Gated Indium Oxide Thin Film Transistors
journal, February 2017

Electrostatic versus Electrochemical Doping and Control of Ferromagnetism in Ion-Gel-Gated Ultrathin La _0.5 Sr _0.5 CoO _3−δ
journal, July 2016

Reversible redox reactions in an epitaxially stabilized SrCoOx oxygen sponge
journal, August 2013

Gate-tunable gigantic lattice deformation in VO ₂
journal, January 2014

Lattice mismatch accommodation via oxygen vacancy ordering in epitaxial La _0.5 Sr _0.5 CoO _3-δ thin films
journal, July 2013

Low-Temperature Transport Properties of Holes Introduced by Ionic Liquid Gating in Hydrogen-Terminated Diamond Surfaces
journal, July 2013

Insulator to metal transition in WO3 induced by electrolyte gating
journal, July 2017

Collective bulk carrier delocalization driven by electrostatic surface charge accumulation
journal, July 2012

Cobalt spin states and hyperfine interactions in ${LaCoO}_{3}$ investigated by $LDA + U$ calculations
journal, September 2010

Suppression of Metal-Insulator Transition in VO2 by Electric Field-Induced Oxygen Vacancy Formation
journal, March 2013

Discovery of superconductivity in KTaO3 by electrostatic carrier doping
journal, May 2011

Studies on room-temperature electric-field effect in ionic-liquid gated VO ₂ three-terminal devices
journal, January 2012

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996

Superconducting Dome in a Gate-Tuned Band Insulator
journal, November 2012

Electrostatic modification of novel materials
journal, November 2006

Electric-Field Control of the Metal-Insulator Transition in Ultrathin NdNiO3 Films
journal, October 2010

Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO ₃ /NdGaO ₃ heterostructures
journal, May 2017

Superconductor–insulator transition in La2 − xSr x CuO4 at the pair quantum resistance
journal, April 2011

Electrically Induced Ferromagnetism at Room Temperature in Cobalt-Doped Titanium Dioxide
journal, May 2011

Electric-field-induced superconductivity in an insulator
journal, October 2008

“Cut and Stick” Rubbery Ion Gels as High Capacitance Gate Dielectrics
journal, July 2012

Large Electric Field Effect in Electrolyte-Gated Manganites
journal, March 2009

Glassy ferromagnetism and magnetic phase separation in ${La}_{1 - x} {Sr}_{x} {CoO}_{3}$
journal, May 2003

Accessing the transport properties of graphene and its multilayers at high carrier density
journal, July 2011

Ab initiomolecular dynamics for liquid metals
journal, January 1993

In operando evidence of deoxygenation in ionic liquid gating of YBa ₂ Cu ₃ O _7-X
journal, December 2016

Direct real space observation of magneto-electronic inhomogeneity in ultra-thin film La0.5Sr0.5CoO3−δ on SrTiO3(001)
journal, September 2014

High-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic Liquids
journal, April 2009

High Conductance 2D Transport around the Hall Mobility Peak in Electrolyte-Gated Rubrene Crystals
journal, December 2014

Oxygen Displacement in Cuprates under Ionic Liquid Field-Effect Gating
journal, August 2016

Chemically Driven Nanoscopic Magnetic Phase Separation at the SrTiO3(001)/La1-xSrxCoO3 Interface
journal, April 2011

Suppression of Ionic Liquid Gate-Induced Metallization of SrTiO ₃ (001) by Oxygen
journal, September 2013

Modulation of the Electrical Properties of VO ₂ Nanobeams Using an Ionic Liquid as a Gating Medium
journal, May 2012

Phase-sensitive specular neutron reflectometry for imaging the nanometer scale composition depth profile of thin-film materials
journal, February 2012

Hopping transport and the Hall effect near the insulator–metal transition in electrochemically gated poly(3-hexylthiophene) transistors
journal, January 2012

Electrostatic Gating of Ultrathin Films
journal, July 2014

Electric-field control of tri-state phase transformation with a selective dual-ion switch
journal, May 2017

Glass-Like Through-Plane Thermal Conductivity Induced by Oxygen Vacancies in Nanoscale Epitaxial La _0.5 Sr _0.5 CoO ₃₋ _δ
journal, November 2017

Oxygen transport in La1−xSrxMn1−yCoyO3±δ perovskites Part I. Oxygen tracer diffusion
journal, February 1998

Electrostatic Control of the Evolution from a Superconducting Phase to an Insulating Phase in Ultrathin ${YBa}_{2} {Cu}_{3} O_{7 - x}$ Films
journal, July 2011

Epitaxial La0.5Sr0.5CoO3 thin films: Structure, magnetism, and transport
journal, July 2008

Tuning of the metal-insulator transition in electrolyte-gated NdNiO3 thin films
journal, October 2010

Accessing the transport properties of graphene and its multi-layers at high carrier density
text, January 2010

Insulator to Metal Transition in WO$_3$ Induced by Electrolyte Gating
text, January 2017

Metal Oxide Nanocomposites: A Perspective from Strain, Defect, and Interface
journal, October 2018

Voltage‐Control of Magnetism in All‐Solid‐State and Solid/Liquid Magnetoelectric Composites
journal, February 2019

Magneto-ionic control of magnetism using a solid-state proton pump
journal, November 2018

Electrolyte-based ionic control of functional oxides
journal, December 2018

Reversible, Electric-Field Induced Magneto-Ionic Control of Magnetism in Mesoporous Cobalt Ferrite Thin Films
journal, July 2019

Electrolyte-gated magnetoelectric actuation: Phenomenology, materials, mechanisms, and prospective applications
journal, March 2019

Dominant role of processing temperature in electric field induced superconductivity in layered ZrNBr
journal, February 2019

Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial ${BaSnO}_{3}$
journal, July 2019

Voltage-Control of Magnetism in All-Solid-State and Solid/Liquid Magnetoelectric Composites
text, January 2019

Dominant role of processing temperature in electric field induced superconductivity in layered ZrNBr
text, January 2018