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Title: In-situ Synchrotron X-ray Studies of the Microstructure and Stability of In 2O 3 Epitaxial Films

Here, we report on the synthesis, stability, and local structure of In 2O 3 thin films grown via rf-magnetron sputtering and characterized by in-situ x-ray scattering and focused x-ray nanodiffraction. We find that In 2O 3 deposited onto (001)-oriented single crystal yttria-stabilized zirconia substrates adopts a Stranski–Krastanov growth mode at a temperature of 850°C, resulting in epitaxial, truncated square pyramids with (111) side walls. We find that at this temperature, the pyramids evaporate unless they are stabilized by a low flux of In 2O 3 from the magnetron source. Lastly, we also find that the internal lattice structure of one such pyramid is made up of differently strained volumes, revealing local structural heterogeneity that may impact the properties of In 2O 3 nanostructures and films.
Authors:
 [1] ;  [1] ;  [1] ; ORCiD logo [2] ;  [1] ;  [1] ;  [1] ;  [1] ; ORCiD logo [3] ; ORCiD logo [3] ;  [3] ;  [3] ;  [4] ;  [1] ;  [1]
  1. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  2. Northern Illinois Univ., DeKalb, IL (United States). Dept. of Physics
  3. Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source II (NSLS-II)
  4. Argonne National Lab. (ANL), Argonne, IL (United States). X-ray Science Division
Publication Date:
Report Number(s):
BNL-114467-2017-JA
Journal ID: ISSN 0003-6951; TRN: US1800592
Grant/Contract Number:
SC0012704
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 16; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; X-rays; Epitaxy; Synchrotrons; Thin films; Radiowave and microwave technology
OSTI Identifier:
1413931
Alternate Identifier(s):
OSTI ID: 1400329