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Title: Light Emission Mechanisms in CuInS 2 Quantum Dots Evaluated by Spectral Electrochemistry

Abstract

Luminescent CuInS2 (CIS) quantum dots (QDs) exhibit highly efficient intragap emission and long, hundreds-of-nanoseconds radiative lifetimes. These spectral properties, distinct from structurally similar II–VI QDs, can be explained by the involvement of intragap defect states containing a localized hole capable of coupling with a conduction band electron for a radiative transition. However, the absolute energies of the intragap and band-edge states, the structure of the emissive defect(s), and the role and origin of nonemissive decay channels still remain poorly understood. Here, we address these questions by applying methods of spectral electrochemistry. Cyclic voltammetry measurements reveal a well-defined intragap state whose redox potential is close to that of the Cux defect state (where x = 1+ or 2+). The energy offset of this state from the valence band accounts well for the apparent photoluminescence Stokes shift observed in optical spectra. These results provide direct evidence that Cu-related defects serve as emission centers responsible for strong intragap emission from CIS QDs. We then use in situ spectroelectrochemistry to reveal two distinct emission pathways based on the differing oxidation states of Cu defects, which can be controlled by altering QD stoichiometry (1+ for stoichiometric QDs and 2+ for Cu-deficient QDs).

Authors:
 [1];  [2];  [2];  [2];  [3]; ORCiD logo
  1. Chemistry Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States, Department of Chemical and Biomolecular Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
  2. Chemistry Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
  3. UbiQD, LLC, 134 East Gate Drive, Los Alamos, New Mexico 87544, United States
Publication Date:
Research Org.:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States); Energy Frontier Research Centers (EFRC) (United States). Center for Advanced Solar Photophysics (CASP)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1413789
Alternate Identifier(s):
OSTI ID: 1438124
Report Number(s):
LA-UR-18-21643
Journal ID: ISSN 2330-4022
Grant/Contract Number:  
AC52-06NA25396
Resource Type:
Published Article
Journal Name:
ACS Photonics
Additional Journal Information:
Journal Name: ACS Photonics Journal Volume: 4 Journal Issue: 10; Journal ID: ISSN 2330-4022
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; Analytical Chemistry

Citation Formats

Fuhr, Addis S., Yun, Hyeong Jin, Makarov, Nikolay S., Li, Hongbo, McDaniel, Hunter, and Klimov, Victor I. Light Emission Mechanisms in CuInS 2 Quantum Dots Evaluated by Spectral Electrochemistry. United States: N. p., 2017. Web. doi:10.1021/acsphotonics.7b00560.
Fuhr, Addis S., Yun, Hyeong Jin, Makarov, Nikolay S., Li, Hongbo, McDaniel, Hunter, & Klimov, Victor I. Light Emission Mechanisms in CuInS 2 Quantum Dots Evaluated by Spectral Electrochemistry. United States. https://doi.org/10.1021/acsphotonics.7b00560
Fuhr, Addis S., Yun, Hyeong Jin, Makarov, Nikolay S., Li, Hongbo, McDaniel, Hunter, and Klimov, Victor I. Mon . "Light Emission Mechanisms in CuInS 2 Quantum Dots Evaluated by Spectral Electrochemistry". United States. https://doi.org/10.1021/acsphotonics.7b00560.
@article{osti_1413789,
title = {Light Emission Mechanisms in CuInS 2 Quantum Dots Evaluated by Spectral Electrochemistry},
author = {Fuhr, Addis S. and Yun, Hyeong Jin and Makarov, Nikolay S. and Li, Hongbo and McDaniel, Hunter and Klimov, Victor I.},
abstractNote = {Luminescent CuInS2 (CIS) quantum dots (QDs) exhibit highly efficient intragap emission and long, hundreds-of-nanoseconds radiative lifetimes. These spectral properties, distinct from structurally similar II–VI QDs, can be explained by the involvement of intragap defect states containing a localized hole capable of coupling with a conduction band electron for a radiative transition. However, the absolute energies of the intragap and band-edge states, the structure of the emissive defect(s), and the role and origin of nonemissive decay channels still remain poorly understood. Here, we address these questions by applying methods of spectral electrochemistry. Cyclic voltammetry measurements reveal a well-defined intragap state whose redox potential is close to that of the Cux defect state (where x = 1+ or 2+). The energy offset of this state from the valence band accounts well for the apparent photoluminescence Stokes shift observed in optical spectra. These results provide direct evidence that Cu-related defects serve as emission centers responsible for strong intragap emission from CIS QDs. We then use in situ spectroelectrochemistry to reveal two distinct emission pathways based on the differing oxidation states of Cu defects, which can be controlled by altering QD stoichiometry (1+ for stoichiometric QDs and 2+ for Cu-deficient QDs).},
doi = {10.1021/acsphotonics.7b00560},
journal = {ACS Photonics},
number = 10,
volume = 4,
place = {United States},
year = {Mon Sep 25 00:00:00 EDT 2017},
month = {Mon Sep 25 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1021/acsphotonics.7b00560

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