An increase in Tc under hydrostatic pressure in the superconducting doped topological insulator Nb0.25Bi2Se3
Abstract
Here, we report a positive hydrostatic pressure derivative of the superconducting transition temperature in the doped topological insulator Nb0.25Bi2Se3 via dc SQUID magnetometry in pressures up to 0.6 GPa. This result is contrary to reports on the homologues CuxBi2Se3 and SrxBi2Se3 where smooth suppression of Tc is observed. This difference may be attributable to an electronic structure composed of multiple bands whereas the other materials in the superconducting doped Bi2Se3 family are believed to be single-band.
- Authors:
-
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Univ. of Notre Dame, IN (United States). Department of Physics
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
- University of Illinois at Urbana-Champaign, Urbana, IL (United States). Department of Physics
- Missouri University of Science and Technology, Rolla, MO (United States). Department of Physics
- Publication Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE
- OSTI Identifier:
- 1413746
- Alternate Identifier(s):
- OSTI ID: 1496329
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physica. C, Superconductivity
- Additional Journal Information:
- Journal Volume: 543; Journal Issue: C; Journal ID: ISSN 0921-4534
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; Nematic superconductors; Pressure-enhanced superconductivity; Superconducting topological insulators; Topological superconductors
Citation Formats
Smylie, M. P., Willa, K., Ryan, K., Claus, H., Kwok, W. -K., Qiu, Y., Hor, Y. S., and Welp, U. An increase in Tc under hydrostatic pressure in the superconducting doped topological insulator Nb0.25Bi2Se3. United States: N. p., 2017.
Web. doi:10.1016/j.physc.2017.10.010.
Smylie, M. P., Willa, K., Ryan, K., Claus, H., Kwok, W. -K., Qiu, Y., Hor, Y. S., & Welp, U. An increase in Tc under hydrostatic pressure in the superconducting doped topological insulator Nb0.25Bi2Se3. United States. https://doi.org/10.1016/j.physc.2017.10.010
Smylie, M. P., Willa, K., Ryan, K., Claus, H., Kwok, W. -K., Qiu, Y., Hor, Y. S., and Welp, U. Thu .
"An increase in Tc under hydrostatic pressure in the superconducting doped topological insulator Nb0.25Bi2Se3". United States. https://doi.org/10.1016/j.physc.2017.10.010. https://www.osti.gov/servlets/purl/1413746.
@article{osti_1413746,
title = {An increase in Tc under hydrostatic pressure in the superconducting doped topological insulator Nb0.25Bi2Se3},
author = {Smylie, M. P. and Willa, K. and Ryan, K. and Claus, H. and Kwok, W. -K. and Qiu, Y. and Hor, Y. S. and Welp, U.},
abstractNote = {Here, we report a positive hydrostatic pressure derivative of the superconducting transition temperature in the doped topological insulator Nb0.25Bi2Se3 via dc SQUID magnetometry in pressures up to 0.6 GPa. This result is contrary to reports on the homologues CuxBi2Se3 and SrxBi2Se3 where smooth suppression of Tc is observed. This difference may be attributable to an electronic structure composed of multiple bands whereas the other materials in the superconducting doped Bi2Se3 family are believed to be single-band.},
doi = {10.1016/j.physc.2017.10.010},
journal = {Physica. C, Superconductivity},
number = C,
volume = 543,
place = {United States},
year = {Thu Oct 26 00:00:00 EDT 2017},
month = {Thu Oct 26 00:00:00 EDT 2017}
}
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Works referencing / citing this record:
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