Uniform p-type doping of silicon nanowires synthesized via vapor-liquid-solid growth with silicon tetrachloride
Abstract
Boron-doped silicon nanowires (SiNWs) grown by the vapor-liquid-solid growth mechanism using silicon tetrachloride (SiCl4) as the silicon precursor and trimethylboron (TMB) as the boron source were studied to understand the axial and radial doping uniformity. TMB-doped SiNWs with diameters up to 400 nm and lengths > 7.5 μm were integrated into a global back-gated test structure with multiple electrodes for electrical characterization. From gate modulated measurements, the SiNWs were confirmed to be heavily doped p-type. Multiple four point resistivity measurements across a total length of 7.5 μm were taken on as-grown SiNWs. Resistivity, corrected for surface charge, was determined to be 0.01 +/– 0.002 Ω cm along the entire length of the as-grown boron doped SiNWs. This was also observed in the axial direction for etched SiNWs, with corrected resistivity of 0.01 +/– 0.003 Ω cm, therefore confirming the uniform p-type doping of SiNWs using TMB and SiCl4 as precursors.
- Authors:
-
- Pennsylvania State Univ., University Park, PA (United States); Michigan Technological Univ., Houghton, MI (United States)
- Pennsylvania State Univ., University Park, PA (United States)
- Pennsylvania State Univ., University Park, PA (United States); Univ. of Florida, Gainesville, FL (United States)
- Publication Date:
- Research Org.:
- Pennsylvania State Univ., University Park, PA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1511167
- Alternate Identifier(s):
- OSTI ID: 1413564
- Grant/Contract Number:
- EE0005323; FG36-08GO18010
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 122; Journal Issue: 23; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Kendrick, Chito, Kuo, Meng -Wei, Li, Jie, Shen, Haoting, Mayer, Theresa S., and Redwing, Joan M. Uniform p-type doping of silicon nanowires synthesized via vapor-liquid-solid growth with silicon tetrachloride. United States: N. p., 2017.
Web. doi:10.1063/1.4993632.
Kendrick, Chito, Kuo, Meng -Wei, Li, Jie, Shen, Haoting, Mayer, Theresa S., & Redwing, Joan M. Uniform p-type doping of silicon nanowires synthesized via vapor-liquid-solid growth with silicon tetrachloride. United States. https://doi.org/10.1063/1.4993632
Kendrick, Chito, Kuo, Meng -Wei, Li, Jie, Shen, Haoting, Mayer, Theresa S., and Redwing, Joan M. Fri .
"Uniform p-type doping of silicon nanowires synthesized via vapor-liquid-solid growth with silicon tetrachloride". United States. https://doi.org/10.1063/1.4993632. https://www.osti.gov/servlets/purl/1511167.
@article{osti_1511167,
title = {Uniform p-type doping of silicon nanowires synthesized via vapor-liquid-solid growth with silicon tetrachloride},
author = {Kendrick, Chito and Kuo, Meng -Wei and Li, Jie and Shen, Haoting and Mayer, Theresa S. and Redwing, Joan M.},
abstractNote = {Boron-doped silicon nanowires (SiNWs) grown by the vapor-liquid-solid growth mechanism using silicon tetrachloride (SiCl4) as the silicon precursor and trimethylboron (TMB) as the boron source were studied to understand the axial and radial doping uniformity. TMB-doped SiNWs with diameters up to 400 nm and lengths > 7.5 μm were integrated into a global back-gated test structure with multiple electrodes for electrical characterization. From gate modulated measurements, the SiNWs were confirmed to be heavily doped p-type. Multiple four point resistivity measurements across a total length of 7.5 μm were taken on as-grown SiNWs. Resistivity, corrected for surface charge, was determined to be 0.01 +/– 0.002 Ω cm along the entire length of the as-grown boron doped SiNWs. This was also observed in the axial direction for etched SiNWs, with corrected resistivity of 0.01 +/– 0.003 Ω cm, therefore confirming the uniform p-type doping of SiNWs using TMB and SiCl4 as precursors.},
doi = {10.1063/1.4993632},
journal = {Journal of Applied Physics},
number = 23,
volume = 122,
place = {United States},
year = {Fri Dec 15 00:00:00 EST 2017},
month = {Fri Dec 15 00:00:00 EST 2017}
}
Web of Science
Figures / Tables:
Works referenced in this record:
Donor deactivation in silicon nanostructures
journal, January 2009
- Björk, Mikael T.; Schmid, Heinz; Knoch, Joachim
- Nature Nanotechnology, Vol. 4, Issue 2
Electronic structure of semiconductor nanowires
journal, April 2006
- Niquet, Y. M.; Lherbier, A.; Quang, N. H.
- Physical Review B, Vol. 73, Issue 16
Vapor-liquid-solid mechanism of single crystal growth
journal, March 1964
- Wagner, R. S.; Ellis, W. C.
- Applied Physics Letters, Vol. 4, Issue 5, p. 89-90
Modulation of Thermoelectric Power Factor via Radial Dopant Inhomogeneity in B-Doped Si Nanowires
journal, August 2014
- Zhuge, Fuwei; Yanagida, Takeshi; Fukata, Naoki
- Journal of the American Chemical Society, Vol. 136, Issue 40, p. 14100-14106
Structural and electrical properties of trimethylboron-doped silicon nanowires
journal, October 2004
- Lew, Kok-Keong; Pan, Ling; Bogart, Timothy E.
- Applied Physics Letters, Vol. 85, Issue 15
Raman Scattering Studies of Electrically Active Impurities in in Situ B-Doped Silicon Nanowires: Effects of Annealing and Oxidation
journal, October 2007
- Kawashima, Takahiro; Imamura, Goh; Saitoh, Tohru
- The Journal of Physical Chemistry C, Vol. 111, Issue 42
Synthesis of thin silicon nanowires using gold-catalyzed chemical vapor deposition
journal, March 2005
- Sharma, S.; Kamins, T. I.; Williams, R. Stanley
- Applied Physics A, Vol. 80, Issue 6
Radial junction silicon wire array solar cells fabricated by gold-catalyzed vapor-liquid-solid growth
journal, October 2010
- Kendrick, Chito E.; Yoon, Heayong P.; Yuwen, Yu A.
- Applied Physics Letters, Vol. 97, Issue 14
Identification of an Intrinsic Source of Doping Inhomogeneity in Vapor–Liquid–Solid-Grown Nanowires
journal, December 2012
- Connell, Justin G.; Yoon, KunHo; Perea, Daniel E.
- Nano Letters, Vol. 13, Issue 1
Effect of diborane on the microstructure of boron-doped silicon nanowires
journal, April 2005
- Pan, Ling; Lew, Kok-Keong; Redwing, Joan M.
- Journal of Crystal Growth, Vol. 277, Issue 1-4
Effect of HCl on the doping and shape control of silicon nanowires
journal, May 2012
- Gentile, P.; Solanki, A.; Pauc, N.
- Nanotechnology, Vol. 23, Issue 21
Self- and foreign-atom diffusion in semiconductor isotope heterostructures. II. Experimental results for silicon
journal, January 2007
- Bracht, H.; Silvestri, H. H.; Sharp, I. D.
- Physical Review B, Vol. 75, Issue 3
Mechanism of the silane decomposition. I. Silane loss kinetics and rate inhibition by hydrogen. II. Modeling of the silane decomposition (all stages of reaction)
journal, October 1985
- White, R. T.; Espino-Rios, R. L.; Rogers, D. S.
- International Journal of Chemical Kinetics, Vol. 17, Issue 10
Correlating dopant distributions and electrical properties of boron-doped silicon nanowires
journal, October 2009
- Schlitz, Ruth A.; Perea, Daniel E.; Lensch-Falk, Jessica L.
- Applied Physics Letters, Vol. 95, Issue 16
Diameter-dependent dopant location in silicon and germanium nanowires
journal, August 2009
- Xie, P.; Hu, Y.; Fang, Y.
- Proceedings of the National Academy of Sciences, Vol. 106, Issue 36
Gas phase equilibrium limitations on the vapor–liquid–solid growth of epitaxial silicon nanowires using SiCl 4
journal, July 2011
- Eichfeld, Sarah M.; Shen, Haoting; Eichfeld, Chad M.
- Journal of Materials Research, Vol. 26, Issue 17
Influence of the Si/SiO2 interface on the charge carrier density of Si nanowires
journal, November 2006
- Schmidt, V.; Senz, S.; Gösele, U.
- Applied Physics A, Vol. 86, Issue 2
Doping of semiconductor nanowires
journal, August 2011
- Wallentin, Jesper; Borgström, Magnus T.
- Journal of Materials Research, Vol. 26, Issue 17
Distribution of Active Impurities in Single Silicon Nanowires
journal, September 2008
- Imamura, Go; Kawashima, Takahiro; Fujii, Minoru
- Nano Letters, Vol. 8, Issue 9
Surface depletion thickness of p-doped silicon nanowires grown using metal-catalysed chemical vapour deposition
journal, May 2006
- Kimukin, I.; Islam, M. Saif; Williams, R. Stanley
- Nanotechnology, Vol. 17, Issue 11
Energy-Conversion Properties of Vapor-Liquid-Solid-Grown Silicon Wire-Array Photocathodes
journal, January 2010
- Boettcher, S. W.; Spurgeon, J. M.; Putnam, M. C.
- Science, Vol. 327, Issue 5962, p. 185-187
Influence of AsH[sub 3], PH[sub 3],and B[sub 2]H[sub 6] on the Growth Rate and Resistivity of Polycrystalline Silicon Films Deposited from a SiH[sub 4]-H[sub 2] Mixture
journal, January 1973
- Eversteyn, F. C.; Put, B. H.
- Journal of The Electrochemical Society, Vol. 120, Issue 1
Modelling on c-Si/a-Si:H wire solar cells: some key parameters to optimize the photovoltaic performance
journal, January 2012
- Ngo, I.; Gueunier-Farret, M. E.; Alvarez, J.
- EPJ Photovoltaics, Vol. 3
Raman Characterization of Active B-Concentration Profiles in Individual p -Type/Intrinsic and Intrinsic/ p -Type Si Nanowires
journal, May 2009
- Imamura, Go; Kawashima, Takahiro; Fujii, Minoru
- The Journal of Physical Chemistry C, Vol. 113, Issue 25
Spatially Resolved Correlation of Active and Total Doping Concentrations in VLS Grown Nanowires
journal, May 2013
- Amit, Iddo; Givan, Uri; Connell, Justin G.
- Nano Letters, Vol. 13, Issue 6
Some aspects of substrate pretreatment for epitaxial Si nanowire growth
journal, November 2008
- Lugstein, A.; Hyun, Y. J.; Steinmair, M.
- Nanotechnology, Vol. 19, Issue 48
The effect of pattern density and wire diameter on the growth rate of micron diameter silicon wires
journal, December 2011
- Kendrick, Chito E.; Redwing, Joan M.
- Journal of Crystal Growth, Vol. 337, Issue 1
Surface Charge Density of Unpassivated and Passivated Metal-Catalyzed Silicon Nanowires
journal, January 2006
- Seo, Kang-ill; Sharma, Shashank; Yasseri, Amir A.
- Electrochemical and Solid-State Letters, Vol. 9, Issue 3
Growth, Thermodynamics, and Electrical Properties of Silicon Nanowires †
journal, January 2010
- Schmidt, V.; Wittemann, J. V.; Gösele, U.
- Chemical Reviews, Vol. 110, Issue 1
Effects of Quantum Confinement on the Doping Limit of Semiconductor Nanowires
journal, May 2007
- Khanal, D. R.; Yim, Joanne W. L.; Walukiewicz, W.
- Nano Letters, Vol. 7, Issue 5
Surface Segregation and Backscattering in Doped Silicon Nanowires
journal, April 2006
- Fernández-Serra, M. V.; Adessi, Ch.; Blase, X.
- Physical Review Letters, Vol. 96, Issue 16
Electric-field assisted assembly and alignment of metallic nanowires
journal, August 2000
- Smith, Peter A.; Nordquist, Christopher D.; Jackson, Thomas N.
- Applied Physics Letters, Vol. 77, Issue 9, p. 1399-1401
Mechanical Properties of Silicon Nanowires
journal, October 2009
- Sohn, Young-Soo; Park, Jinsung; Yoon, Gwonchan
- Nanoscale Research Letters, Vol. 5, Issue 1
Controlled Growth of Si Nanowire Arrays for Device Integration
journal, March 2005
- Hochbaum, Allon I.; Fan, Rong; He, Rongrui
- Nano Letters, Vol. 5, Issue 3, p. 457-460
Radial Distribution of Active Impurities in Individual In situ Boron-Doped Silicon Nanowires: A Raman Scattering Study
journal, August 2010
- Nishimura, Chiharu; Fujii, Minoru; Kawashima, Takahiro
- Japanese Journal of Applied Physics, Vol. 49, Issue 8
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