Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

Jung, Daehwan; Callahan, Patrick G.; Shin, Bongki; Mukherjee, Kunal; Gossard, Arthur C.; Bowers, John E.

doi:10.1063/1.5001360

Title: Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

Abstract

We report a systematic study of high quality GaAs growths on on-axis (001) GaP/Si substrates using molecular beam epitaxy. Various types of dislocation filter layers and growth temperatures of initial GaAs layer were investigated to reduce the threading dislocation densities in GaAs on GaP/Si. Electron channeling contrast imaging techniques revealed that an optimized GaAs buffer layer with thermal cycle annealing and InGaAs/GaAs dislocation filter layers has a threading dislocation density of 7.2 × 106 cm−2, which is a factor of 40 lower than an unoptimized GaAs buffer. The root-mean-square surface roughness was greatly decreased from 7.8 nm to 2.9 nm after the optimization process. A strong enhancement in photoluminescence intensity indicates that the optimized GaAs template grown on on-axis (001) GaP/Si substrates is a promising virtual substrate for Si-based optoelectronic devices.

Authors:: Jung, Daehwan; Callahan, Patrick G.; Shin, Bongki; Mukherjee, Kunal; Gossard, Arthur C.; Bowers, John E.

Publication Date:: Tue Dec 12 00:00:00 EST 2017

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1413022

Grant/Contract Number:: AR000067

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Name: Journal of Applied Physics Journal Volume: 122 Journal Issue: 22; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Jung, Daehwan, Callahan, Patrick G., Shin, Bongki, Mukherjee, Kunal, Gossard, Arthur C., and Bowers, John E. Low threading dislocation density GaAs growth on on-axis GaP/Si (001).  United States: N. p., 2017. 
Web.  doi:10.1063/1.5001360.

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                    Jung, Daehwan, Callahan, Patrick G., Shin, Bongki, Mukherjee, Kunal, Gossard, Arthur C., & Bowers, John E. Low threading dislocation density GaAs growth on on-axis GaP/Si (001).  United States.  https://doi.org/10.1063/1.5001360

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                    Jung, Daehwan, Callahan, Patrick G., Shin, Bongki, Mukherjee, Kunal, Gossard, Arthur C., and Bowers, John E. Tue .  
"Low threading dislocation density GaAs growth on on-axis GaP/Si (001)".  United States.  https://doi.org/10.1063/1.5001360.

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@article{osti_1413022,

  title        = {Low threading dislocation density GaAs growth on on-axis GaP/Si (001)},

  author       = {Jung, Daehwan and Callahan, Patrick G. and Shin, Bongki and Mukherjee, Kunal and Gossard, Arthur C. and Bowers, John E.},

  abstractNote = {We report a systematic study of high quality GaAs growths on on-axis (001) GaP/Si substrates using molecular beam epitaxy. Various types of dislocation filter layers and growth temperatures of initial GaAs layer were investigated to reduce the threading dislocation densities in GaAs on GaP/Si. Electron channeling contrast imaging techniques revealed that an optimized GaAs buffer layer with thermal cycle annealing and InGaAs/GaAs dislocation filter layers has a threading dislocation density of 7.2 × 106 cm−2, which is a factor of 40 lower than an unoptimized GaAs buffer. The root-mean-square surface roughness was greatly decreased from 7.8 nm to 2.9 nm after the optimization process. A strong enhancement in photoluminescence intensity indicates that the optimized GaAs template grown on on-axis (001) GaP/Si substrates is a promising virtual substrate for Si-based optoelectronic devices.},

  doi          = {10.1063/1.5001360},

  journal      = {Journal of Applied Physics},

  number       = 22,

  volume       = 122,

  place        = {United States},

  year         = {Tue Dec 12 00:00:00 EST 2017},

  month        = {Tue Dec 12 00:00:00 EST 2017}

}

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Title: Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

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Dislocation reduction by impurity diffusion in epitaxial GaAs grown on Si
journal, May 1988

Characterization of epitaxially grown GaAs on Si substrates with III‐V compounds intermediate layers by metalorganic chemical vapor deposition
journal, May 1985

Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si
journal, January 2017

Computer simulation of threading dislocation density reduction in heteroepitaxial layers
journal, October 1997

InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001)
journal, August 2014

A dynamical theory for the contrast of perfect and imperfect crystals in the scanning electron microscope using backscattered electrons
journal, July 1972

Effect of Cycle Annealing Parameters on Dislocation Density Reduction for HgCdTe on Si
journal, June 2011

Electrically pumped continuous-wave 13 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates
journal, January 2017

Antiphase domains in GaAs grown by metalorganic chemical vapor deposition on silicon‐on‐insulator
journal, September 1988

Misfit and Threading Dislocations in GaAs Layers Grown on Si Substrates by MOCVD
journal, March 1987

Modeling of Threading Dislocation Density Reduction in Heteroepitaxial Layers I. Geometry and Crystallography
journal, December 1996

Dynamical Formation Process of Pure Edge Misfit Dislocations at GaAs/Si Interfaces in Post-Annealing
journal, September 1994

Thermal annealing effects of defect reduction in GaAs on Si substrates
journal, November 1990