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Title: Nanoimaging of Electronic Heterogeneity in Bi 2 Se 3 and Sb 2 Te 3 Nanocrystals

Authors:
 [1];  [2];  [3];  [4];  [5];  [3];  [6];  [6];  [1];  [6];  [5];  [4];  [6];  [3];  [2];  [5];  [5]
  1. Chinese Academy of Sciences (CAS), Dalian (China). State Key Lab. of Catalysis, Center for Excellence in Nanoscience and Dalian Inst. of Chemical Physics; Univ. of Chinese Academy of Sciences, Beijing (China)
  2. Univ. of Colorado, Boulder, CO (United States). Dept. of Physics, Dept. of Chemistry and Joint Inst. for Lab. Astrophysics (JILA)
  3. Univ. of Science and Technology of China, Hefei (China). Hefei National Lab. for Physical Sciences at the Microscale
  4. Univ. of Chinese Academy of Sciences, Beijing (China). Beijing National Lab. for Condensed Matter Physics and Inst. of Physics
  5. Chinese Academy of Sciences (CAS), Dalian (China). State Key Lab. of Catalysis, Center for Excellence in Nanoscience and Dalian Inst. of Chemical Physics
  6. Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Key Research and Development Program of China; National Natural Science Foundation of China (NNSFC); National Science Foundation (NSF)
OSTI Identifier:
1412594
Grant/Contract Number:  
AC02-05CH11231; 2016YFA0203500; 51290272; 11474350; SC0008807; DMR‐1548924
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Electronic Materials
Additional Journal Information:
Journal Name: Advanced Electronic Materials Journal Volume: 4 Journal Issue: 1; Journal ID: ISSN 2199-160X
Publisher:
Wiley
Country of Publication:
United States
Language:
English

Citation Formats

Lu, Xiaowei, Khatib, Omar, Du, Xutao, Duan, Jiahua, Wei, Wei, Liu, Xianli, Bechtel, Hans A., D'Apuzzo, Fausto, Yan, Mingtao, Buyanin, Alexander, Fu, Qiang, Chen, Jianing, Salmeron, Miquel, Zeng, Jie, Raschke, Markus B., Jiang, Peng, and Bao, Xinhe. Nanoimaging of Electronic Heterogeneity in Bi 2 Se 3 and Sb 2 Te 3 Nanocrystals. United States: N. p., 2017. Web. doi:10.1002/aelm.201700377.
Lu, Xiaowei, Khatib, Omar, Du, Xutao, Duan, Jiahua, Wei, Wei, Liu, Xianli, Bechtel, Hans A., D'Apuzzo, Fausto, Yan, Mingtao, Buyanin, Alexander, Fu, Qiang, Chen, Jianing, Salmeron, Miquel, Zeng, Jie, Raschke, Markus B., Jiang, Peng, & Bao, Xinhe. Nanoimaging of Electronic Heterogeneity in Bi 2 Se 3 and Sb 2 Te 3 Nanocrystals. United States. doi:10.1002/aelm.201700377.
Lu, Xiaowei, Khatib, Omar, Du, Xutao, Duan, Jiahua, Wei, Wei, Liu, Xianli, Bechtel, Hans A., D'Apuzzo, Fausto, Yan, Mingtao, Buyanin, Alexander, Fu, Qiang, Chen, Jianing, Salmeron, Miquel, Zeng, Jie, Raschke, Markus B., Jiang, Peng, and Bao, Xinhe. Mon . "Nanoimaging of Electronic Heterogeneity in Bi 2 Se 3 and Sb 2 Te 3 Nanocrystals". United States. doi:10.1002/aelm.201700377.
@article{osti_1412594,
title = {Nanoimaging of Electronic Heterogeneity in Bi 2 Se 3 and Sb 2 Te 3 Nanocrystals},
author = {Lu, Xiaowei and Khatib, Omar and Du, Xutao and Duan, Jiahua and Wei, Wei and Liu, Xianli and Bechtel, Hans A. and D'Apuzzo, Fausto and Yan, Mingtao and Buyanin, Alexander and Fu, Qiang and Chen, Jianing and Salmeron, Miquel and Zeng, Jie and Raschke, Markus B. and Jiang, Peng and Bao, Xinhe},
abstractNote = {},
doi = {10.1002/aelm.201700377},
journal = {Advanced Electronic Materials},
number = 1,
volume = 4,
place = {United States},
year = {2017},
month = {12}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1002/aelm.201700377

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