Nanoimaging of Electronic Heterogeneity in Bi 2 Se 3 and Sb 2 Te 3 Nanocrystals

doi:10.1002/aelm.201700377

This content will become publicly available on December 11, 2018

Title: Nanoimaging of Electronic Heterogeneity in Bi ₂ Se ₃ and Sb ₂ Te ₃ Nanocrystals

Authors:

Lu, Xiaowei ^[1] ; Khatib, Omar ^[2] ; Du, Xutao ^[3] ; Duan, Jiahua ^[4] ; Wei, Wei ^[5] ; Liu, Xianli ^[3] ; Bechtel, Hans A. ^[6] ; D'Apuzzo, Fausto ^[6] ; Yan, Mingtao ^[1] ; Buyanin, Alexander ^[6] ; Fu, Qiang ^[5] ; Chen, Jianing ^[4] ; Salmeron, Miquel ^[6] ; Zeng, Jie ^[3] ; Raschke, Markus B. ^[2] ; Jiang, Peng ^[5] ; Bao, Xinhe ^[5]

Chinese Academy of Sciences (CAS), Dalian (China). State Key Lab. of Catalysis, Center for Excellence in Nanoscience and Dalian Inst. of Chemical Physics; Univ. of Chinese Academy of Sciences, Beijing (China)
Univ. of Colorado, Boulder, CO (United States). Dept. of Physics, Dept. of Chemistry and Joint Inst. for Lab. Astrophysics (JILA)
Univ. of Science and Technology of China, Hefei (China). Hefei National Lab. for Physical Sciences at the Microscale
Univ. of Chinese Academy of Sciences, Beijing (China). Beijing National Lab. for Condensed Matter Physics and Inst. of Physics
Chinese Academy of Sciences (CAS), Dalian (China). State Key Lab. of Catalysis, Center for Excellence in Nanoscience and Dalian Inst. of Chemical Physics
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)

Publication Date:: 2017-12-11

Grant/Contract Number:: AC02-05CH11231; 2016YFA0203500; 51290272; 11474350; SC0008807; DMR‐1548924

Type:: Publisher's Accepted Manuscript

Journal Name:: Advanced Electronic Materials

Additional Journal Information:: Journal Name: Advanced Electronic Materials Journal Volume: 4 Journal Issue: 1; Journal ID: ISSN 2199-160X

Publisher:: Wiley

Sponsoring Org:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Key Research and Development Program of China; National Natural Science Foundation of China (NNSFC); National Science Foundation (NSF)

Country of Publication:: United States

Language:: English

OSTI Identifier:: 1412594


                    Lu, Xiaowei, Khatib, Omar, Du, Xutao, Duan, Jiahua, Wei, Wei, Liu, Xianli, Bechtel, Hans A., D'Apuzzo, Fausto, Yan, Mingtao, Buyanin, Alexander, Fu, Qiang, Chen, Jianing, Salmeron, Miquel, Zeng, Jie, Raschke, Markus B., Jiang, Peng, and Bao, Xinhe. Nanoimaging of Electronic Heterogeneity in Bi 2 Se 3 and Sb 2 Te 3 Nanocrystals.  United States: N. p.,  
        Web.  doi:10.1002/aelm.201700377.

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                    Lu, Xiaowei, Khatib, Omar, Du, Xutao, Duan, Jiahua, Wei, Wei, Liu, Xianli, Bechtel, Hans A., D'Apuzzo, Fausto, Yan, Mingtao, Buyanin, Alexander, Fu, Qiang, Chen, Jianing, Salmeron, Miquel, Zeng, Jie, Raschke, Markus B., Jiang, Peng, & Bao, Xinhe. Nanoimaging of Electronic Heterogeneity in Bi 2 Se 3 and Sb 2 Te 3 Nanocrystals.  United States.  doi:10.1002/aelm.201700377.

Copy to clipboard


                    Lu, Xiaowei, Khatib, Omar, Du, Xutao, Duan, Jiahua, Wei, Wei, Liu, Xianli, Bechtel, Hans A., D'Apuzzo, Fausto, Yan, Mingtao, Buyanin, Alexander, Fu, Qiang, Chen, Jianing, Salmeron, Miquel, Zeng, Jie, Raschke, Markus B., Jiang, Peng, and Bao, Xinhe. 2017.  
        "Nanoimaging of Electronic Heterogeneity in Bi 2 Se 3 and Sb 2 Te 3 Nanocrystals".  United States.  
        doi:10.1002/aelm.201700377.

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@article{osti_1412594,

  title        = {Nanoimaging of Electronic Heterogeneity in Bi 2 Se 3 and Sb 2 Te 3 Nanocrystals},

  author       = {Lu, Xiaowei and Khatib, Omar and Du, Xutao and Duan, Jiahua and Wei, Wei and Liu, Xianli and Bechtel, Hans A. and D'Apuzzo, Fausto and Yan, Mingtao and Buyanin, Alexander and Fu, Qiang and Chen, Jianing and Salmeron, Miquel and Zeng, Jie and Raschke, Markus B. and Jiang, Peng and Bao, Xinhe},

  abstractNote = {},

  doi          = {10.1002/aelm.201700377},

  journal      = {Advanced Electronic Materials},

  number       = 1,

  volume       = 4,

  place        = {United States},

  year         = {2017},

  month        = {12}

}

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Free Publicly Accessible Full Text
This content will become publicly available on December 11, 2018
Publisher's Version of Record
10.1002/aelm.201700377
https://doi.org/10.1002/aelm.201700377

Works referenced in this record:

Experimental Realization of a Three-Dimensional Topological Insulator, Bi₂Te₃
journal, June 2009

Chen, Y. L.; Analytis, J. G.; Chu, J.-H.
Science, Vol. 325, Issue 5937, p. 178-181
DOI: 10.1126/science.1173034

Quantum Oscillations and Hall Anomaly of Surface States in the Topological Insulator Bi₂Te₃
journal, July 2010

Qu, D.-X.; Hor, Y. S.; Xiong, J.
Science, Vol. 329, Issue 5993, p. 821-824
DOI: 10.1126/science.1189792

Chemical Vapor Deposition Growth of Crystalline Monolayer MoSe₂
journal, April 2014

Wang, Xingli; Gong, Yongji; Shi, Gang
ACS Nano, Vol. 8, Issue 5, p. 5125-5131
DOI: 10.1021/nn501175k

Topological field theory of time-reversal invariant insulators
journal, November 2008

Qi, Xiao-Liang; Hughes, Taylor L.; Zhang, Shou-Cheng
Physical Review B, Vol. 78, Issue 19, Article No. 195424
DOI: 10.1103/PhysRevB.78.195424

Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
journal, May 2009

Xia, Y.; Qian, D.; Hsieh, D.
Nature Physics, Vol. 5, Issue 6, p. 398-402
DOI: 10.1038/nphys1274

Topological insulators in Bi₂Se₃, Bi₂Te₃ and Sb₂Te₃ with a single Dirac cone on the surface
journal, May 2009

Zhang, Haijun; Liu, Chao-Xing; Qi, Xiao-Liang
Nature Physics, Vol. 5, Issue 6, p. 438-442
DOI: 10.1038/nphys1270

High-Thermoelectric Performance of Nanostructured Bismuth Antimony Telluride Bulk Alloys
journal, May 2008

Poudel, B.; Hao, Q.; Ma, Y.
Science, Vol. 320, Issue 5876, p. 634-638
DOI: 10.1126/science.1156446

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Title: Nanoimaging of Electronic Heterogeneity in Bi 2 Se 3 and Sb 2 Te 3 Nanocrystals

Access journal articles and accepted manuscripts
resulting from DOE research funding

Title: Nanoimaging of Electronic Heterogeneity in Bi ₂ Se ₃ and Sb ₂ Te ₃ Nanocrystals