Nanoimaging of Electronic Heterogeneity in Bi 2 Se 3 and Sb 2 Te 3 Nanocrystals
- Authors:
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- Chinese Academy of Sciences (CAS), Dalian (China). State Key Lab. of Catalysis, Center for Excellence in Nanoscience and Dalian Inst. of Chemical Physics; Univ. of Chinese Academy of Sciences, Beijing (China)
- Univ. of Colorado, Boulder, CO (United States). Dept. of Physics, Dept. of Chemistry and Joint Inst. for Lab. Astrophysics (JILA)
- Univ. of Science and Technology of China, Hefei (China). Hefei National Lab. for Physical Sciences at the Microscale
- Univ. of Chinese Academy of Sciences, Beijing (China). Beijing National Lab. for Condensed Matter Physics and Inst. of Physics
- Chinese Academy of Sciences (CAS), Dalian (China). State Key Lab. of Catalysis, Center for Excellence in Nanoscience and Dalian Inst. of Chemical Physics
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
- Publication Date:
- Grant/Contract Number:
- AC02-05CH11231; 2016YFA0203500; 51290272; 11474350; SC0008807; DMR‐1548924
- Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Advanced Electronic Materials
- Additional Journal Information:
- Journal Volume: 4; Journal Issue: 1; Related Information: CHORUS Timestamp: 2018-01-13 01:09:43; Journal ID: ISSN 2199-160X
- Publisher:
- Wiley
- Research Org:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
- Sponsoring Org:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Key Research and Development Program of China; National Natural Science Foundation of China (NNSFC); National Science Foundation (NSF)
- Country of Publication:
- United States
- Language:
- English
- OSTI Identifier:
- 1412594