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This content will become publicly available on December 11, 2018

Title: Nanoimaging of Electronic Heterogeneity in Bi 2 Se 3 and Sb 2 Te 3 Nanocrystals

Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [3] ;  [6] ;  [6] ;  [1] ;  [6] ;  [5] ;  [4] ;  [6] ;  [3] ;  [2] ;  [5] ;  [5]
  1. Chinese Academy of Sciences (CAS), Dalian (China). State Key Lab. of Catalysis, Center for Excellence in Nanoscience and Dalian Inst. of Chemical Physics; Univ. of Chinese Academy of Sciences, Beijing (China)
  2. Univ. of Colorado, Boulder, CO (United States). Dept. of Physics, Dept. of Chemistry and Joint Inst. for Lab. Astrophysics (JILA)
  3. Univ. of Science and Technology of China, Hefei (China). Hefei National Lab. for Physical Sciences at the Microscale
  4. Univ. of Chinese Academy of Sciences, Beijing (China). Beijing National Lab. for Condensed Matter Physics and Inst. of Physics
  5. Chinese Academy of Sciences (CAS), Dalian (China). State Key Lab. of Catalysis, Center for Excellence in Nanoscience and Dalian Inst. of Chemical Physics
  6. Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Publication Date:
Grant/Contract Number:
AC02-05CH11231; 2016YFA0203500; 51290272; 11474350; SC0008807; DMR‐1548924
Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Electronic Materials
Additional Journal Information:
Journal Volume: 4; Journal Issue: 1; Related Information: CHORUS Timestamp: 2018-01-13 01:09:43; Journal ID: ISSN 2199-160X
Publisher:
Wiley
Research Org:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Key Research and Development Program of China; National Natural Science Foundation of China (NNSFC); National Science Foundation (NSF)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1412594