skip to main content

DOE PAGESDOE PAGES

Title: Correlation of a Bipolar-Transistor-Based Neutron Displacement Damage Sensor Methodology with Proton Irradiations

For this research, a bipolar-transistor-based sensor technique has been used to compare silicon displacement damage from known and unknown neutron energy spectra generated in nuclear reactor and high-energy-density physics environments. The technique has been shown to yield 1-MeV(Si) equivalent neutron fluence measurements comparable to traditional neutron activation dosimetry. This study significantly extends previous results by evaluating three types of bipolar devices utilized as displacement damage sensors at a nuclear research reactor and at a Pelletron particle accelerator. Ionizing dose effects are compensated for via comparisons with 10-keV x-ray and/or cobalt-60 gamma ray irradiations. Non-ionizing energy loss calculations adequately approximate the correlations between particle-device responses and provide evidence for the use of one particle type to screen the sensitivity of the other.
Authors:
 [1] ;  [2] ;  [3] ;  [3] ;  [2] ;  [2]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Vanderbilt Univ., Nashville, TN (United States). Department of Electrical Engineering and Computer Science
  2. Vanderbilt Univ., Nashville, TN (United States). Department of Electrical Engineering and Computer Science
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Report Number(s):
SAND-2017-7419J
Journal ID: ISSN 0018-9499; 655345; TRN: US1800248
Grant/Contract Number:
AC04-94AL85000; NA0003525
Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 65; Journal Issue: 1; Journal ID: ISSN 0018-9499
Publisher:
IEEE
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
22 GENERAL STUDIES OF NUCLEAR REACTORS; 43 PARTICLE ACCELERATORS; displacement damage; silicon bipolar transistors; non-ionizing energy loss; ionizing dose; neutron dosimetry; commercial-off-the-shelf parts
OSTI Identifier:
1411610

Tonigan, Andrew M., Arutt, Charles N., Parma, Edward J., Griffin, Patrick J., Fleetwood, Daniel M., and Schrimpf, Ronald D.. Correlation of a Bipolar-Transistor-Based Neutron Displacement Damage Sensor Methodology with Proton Irradiations. United States: N. p., Web. doi:10.1109/tns.2017.2774759.
Tonigan, Andrew M., Arutt, Charles N., Parma, Edward J., Griffin, Patrick J., Fleetwood, Daniel M., & Schrimpf, Ronald D.. Correlation of a Bipolar-Transistor-Based Neutron Displacement Damage Sensor Methodology with Proton Irradiations. United States. doi:10.1109/tns.2017.2774759.
Tonigan, Andrew M., Arutt, Charles N., Parma, Edward J., Griffin, Patrick J., Fleetwood, Daniel M., and Schrimpf, Ronald D.. 2017. "Correlation of a Bipolar-Transistor-Based Neutron Displacement Damage Sensor Methodology with Proton Irradiations". United States. doi:10.1109/tns.2017.2774759. https://www.osti.gov/servlets/purl/1411610.
@article{osti_1411610,
title = {Correlation of a Bipolar-Transistor-Based Neutron Displacement Damage Sensor Methodology with Proton Irradiations},
author = {Tonigan, Andrew M. and Arutt, Charles N. and Parma, Edward J. and Griffin, Patrick J. and Fleetwood, Daniel M. and Schrimpf, Ronald D.},
abstractNote = {For this research, a bipolar-transistor-based sensor technique has been used to compare silicon displacement damage from known and unknown neutron energy spectra generated in nuclear reactor and high-energy-density physics environments. The technique has been shown to yield 1-MeV(Si) equivalent neutron fluence measurements comparable to traditional neutron activation dosimetry. This study significantly extends previous results by evaluating three types of bipolar devices utilized as displacement damage sensors at a nuclear research reactor and at a Pelletron particle accelerator. Ionizing dose effects are compensated for via comparisons with 10-keV x-ray and/or cobalt-60 gamma ray irradiations. Non-ionizing energy loss calculations adequately approximate the correlations between particle-device responses and provide evidence for the use of one particle type to screen the sensitivity of the other.},
doi = {10.1109/tns.2017.2774759},
journal = {IEEE Transactions on Nuclear Science},
number = 1,
volume = 65,
place = {United States},
year = {2017},
month = {11}
}