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This content will become publicly available on December 6, 2018

Title: Maskless regrowth of GaN for trenched devices by MOCVD

Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Electrical and Computer Engineering Department, University of California Santa Barbara, Santa Barbara, California 93106, USA
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 23; Related Information: CHORUS Timestamp: 2017-12-06 10:40:08; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1411489