Maskless regrowth of GaN for trenched devices by MOCVD

Agarwal, Anchal; Koksaldi, Onur; Gupta, Chirag; Keller, Stacia; Mishra, Umesh K.

doi:10.1063/1.5003257

Title: Maskless regrowth of GaN for trenched devices by MOCVD

Abstract

Blanket regrowth studies were performed on GaN trenches with varying widths and optimized for two types of devices—those that required the profile of the trench to be maintained and those that required the complete filling of trenches, i.e., a planar surface after regrowth. Low temperature Al0.22Ga0.78N growth was optimized and used as the marker layer for SEM. GaN deposition at a medium temperature of 950 °C and using N2 as carrier gas resulted primarily in growth on the (0001) plane, while the growth on the sidewalls was governed by the formation of slow growing semi-polar planes. This gave a conformal profile to the regrown GaN—useful for regrown GaN interlayer based vertical trench MOSFETs. In contrast, high temperature (1150 °C) growth in H2 resulted in high lateral growth rates. The planar surface was achieved under these conditions—a very promising result for CAVET-type devices.

Authors:: Agarwal, Anchal; Koksaldi, Onur; Gupta, Chirag; Keller, Stacia; Mishra, Umesh K.

Publication Date:: 2017-12-06

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1411489

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Name: Applied Physics Letters Journal Volume: 111 Journal Issue: 23; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Agarwal, Anchal, Koksaldi, Onur, Gupta, Chirag, Keller, Stacia, and Mishra, Umesh K. Maskless regrowth of GaN for trenched devices by MOCVD.  United States: N. p., 2017. 
Web.  doi:10.1063/1.5003257.

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                    Agarwal, Anchal, Koksaldi, Onur, Gupta, Chirag, Keller, Stacia, & Mishra, Umesh K. Maskless regrowth of GaN for trenched devices by MOCVD.  United States.  https://doi.org/10.1063/1.5003257

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                    Agarwal, Anchal, Koksaldi, Onur, Gupta, Chirag, Keller, Stacia, and Mishra, Umesh K. Wed .  
"Maskless regrowth of GaN for trenched devices by MOCVD".  United States.  https://doi.org/10.1063/1.5003257.

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@article{osti_1411489,

  title        = {Maskless regrowth of GaN for trenched devices by MOCVD},

  author       = {Agarwal, Anchal and Koksaldi, Onur and Gupta, Chirag and Keller, Stacia and Mishra, Umesh K.},

  abstractNote = {Blanket regrowth studies were performed on GaN trenches with varying widths and optimized for two types of devices—those that required the profile of the trench to be maintained and those that required the complete filling of trenches, i.e., a planar surface after regrowth. Low temperature Al0.22Ga0.78N growth was optimized and used as the marker layer for SEM. GaN deposition at a medium temperature of 950 °C and using N2 as carrier gas resulted primarily in growth on the (0001) plane, while the growth on the sidewalls was governed by the formation of slow growing semi-polar planes. This gave a conformal profile to the regrown GaN—useful for regrown GaN interlayer based vertical trench MOSFETs. In contrast, high temperature (1150 °C) growth in H2 resulted in high lateral growth rates. The planar surface was achieved under these conditions—a very promising result for CAVET-type devices.},

  doi          = {10.1063/1.5003257},

  journal      = {Applied Physics Letters},

  number       = 23,

  volume       = 111,

  place        = {United States},

  year         = {2017},

  month        = {12}

}

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Works referenced in this record:

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Title: Maskless regrowth of GaN for trenched devices by MOCVD

Abstract

Citation Formats

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