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Title: Maskless regrowth of GaN for trenched devices by MOCVD

Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Electrical and Computer Engineering Department, University of California Santa Barbara, Santa Barbara, California 93106, USA
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 111 Journal Issue: 23; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1411489

Agarwal, Anchal, Koksaldi, Onur, Gupta, Chirag, Keller, Stacia, and Mishra, Umesh K. Maskless regrowth of GaN for trenched devices by MOCVD. United States: N. p., Web. doi:10.1063/1.5003257.
Agarwal, Anchal, Koksaldi, Onur, Gupta, Chirag, Keller, Stacia, & Mishra, Umesh K. Maskless regrowth of GaN for trenched devices by MOCVD. United States. doi:10.1063/1.5003257.
Agarwal, Anchal, Koksaldi, Onur, Gupta, Chirag, Keller, Stacia, and Mishra, Umesh K. 2017. "Maskless regrowth of GaN for trenched devices by MOCVD". United States. doi:10.1063/1.5003257.
@article{osti_1411489,
title = {Maskless regrowth of GaN for trenched devices by MOCVD},
author = {Agarwal, Anchal and Koksaldi, Onur and Gupta, Chirag and Keller, Stacia and Mishra, Umesh K.},
abstractNote = {},
doi = {10.1063/1.5003257},
journal = {Applied Physics Letters},
number = 23,
volume = 111,
place = {United States},
year = {2017},
month = {12}
}

Works referenced in this record:

High Breakdown ( >1500 V ) AlGaN/GaN HEMTs by Substrate-Transfer Technology
journal, September 2010