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Title: Analysis of 2D Transport and Performance Characteristics for Lateral Power Devices Based on AlGaN Alloys

Abstract

In this paper, predicted lateral power device performance as a function of alloy composition is characterized by a standard lateral device figure-of-merit (LFOM) that depends on mobility, critical electric field, and sheet carrier density. The paper presents calculations of AlGaN electron mobility in lateral devices such as HEMTs across the entire alloy composition range. Alloy scattering and optical polar phonon scattering are the dominant mechanisms limiting carrier mobility. Due to the significant degradation of mobility from alloy scattering, at room temperature Al fractions greater than about 85% are required for improved LFOM relative to GaN using a conservative sheet charge density of 1 × 1013 cm–2. However, at higher temperatures at which AlGaN power devices are anticipated to operate, this “breakeven” composition decreases to about 65% at 500 K, for example. For high-frequency applications, the Johnson figure-of-merit (JFOM) is the relevant metric to compare potential device performance across materials platforms. At room temperature, the JFOM for AlGaN alloys is predicted to surpass that of GaN for Al fractions greater than about 40%.

Authors:
 [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories, null
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1411230
Report Number(s):
SAND2017-12169J
Journal ID: ISSN 2162-8769; 658595
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
ECS Journal of Solid State Science and Technology
Additional Journal Information:
Journal Volume: 6; Journal Issue: 11; Journal ID: ISSN 2162-8769
Publisher:
Electrochemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Coltrin, Michael E., Baca, Albert G., and Kaplar, Robert J. Analysis of 2D Transport and Performance Characteristics for Lateral Power Devices Based on AlGaN Alloys. United States: N. p., 2017. Web. doi:10.1149/2.0241711jss.
Coltrin, Michael E., Baca, Albert G., & Kaplar, Robert J. Analysis of 2D Transport and Performance Characteristics for Lateral Power Devices Based on AlGaN Alloys. United States. doi:https://doi.org/10.1149/2.0241711jss
Coltrin, Michael E., Baca, Albert G., and Kaplar, Robert J. Thu . "Analysis of 2D Transport and Performance Characteristics for Lateral Power Devices Based on AlGaN Alloys". United States. doi:https://doi.org/10.1149/2.0241711jss. https://www.osti.gov/servlets/purl/1411230.
@article{osti_1411230,
title = {Analysis of 2D Transport and Performance Characteristics for Lateral Power Devices Based on AlGaN Alloys},
author = {Coltrin, Michael E. and Baca, Albert G. and Kaplar, Robert J.},
abstractNote = {In this paper, predicted lateral power device performance as a function of alloy composition is characterized by a standard lateral device figure-of-merit (LFOM) that depends on mobility, critical electric field, and sheet carrier density. The paper presents calculations of AlGaN electron mobility in lateral devices such as HEMTs across the entire alloy composition range. Alloy scattering and optical polar phonon scattering are the dominant mechanisms limiting carrier mobility. Due to the significant degradation of mobility from alloy scattering, at room temperature Al fractions greater than about 85% are required for improved LFOM relative to GaN using a conservative sheet charge density of 1 × 1013 cm–2. However, at higher temperatures at which AlGaN power devices are anticipated to operate, this “breakeven” composition decreases to about 65% at 500 K, for example. For high-frequency applications, the Johnson figure-of-merit (JFOM) is the relevant metric to compare potential device performance across materials platforms. At room temperature, the JFOM for AlGaN alloys is predicted to surpass that of GaN for Al fractions greater than about 40%.},
doi = {10.1149/2.0241711jss},
journal = {ECS Journal of Solid State Science and Technology},
number = 11,
volume = 6,
place = {United States},
year = {2017},
month = {10}
}

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    Works referencing / citing this record:

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