Ion implantation for deterministic single atom devices

Pacheco, J. L.; Singh, M.; Perry, D. L.; Wendt, J. R.; Ten Eyck, G.; Manginell, R. P.; Pluym, T.; Luhman, D. R.; Lilly, M. P.; Carroll, M. S.; Bielejec, E.

doi:10.1063/1.5001520

Title: Ion implantation for deterministic single atom devices

Abstract

Here, we demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom devices in materials where the nanostructure and ion detectors can be integrated, including donor-based qubits in Si and color centers in diamond.

Authors:

^[1]; Singh, M. ^[1]; Perry, D. L. ^[1]; Wendt, J. R. ^[1]; Ten Eyck, G. ^[1];

^[1]; Pluym, T. ^[1]; Luhman, D. R. ^[1]; Lilly, M. P. ^[1]; Carroll, M. S. ^[1]; Bielejec, E. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Publication Date:: Mon Dec 04 00:00:00 EST 2017

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1411229

Report Number(s):: SAND-2017-11983J
Journal ID: ISSN 0034-6748; 658452; TRN: US1800202

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: Review of Scientific Instruments

Additional Journal Information:: Journal Volume: 88; Journal Issue: 12; Journal ID: ISSN 0034-6748

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 74 ATOMIC AND MOLECULAR PHYSICS

Citation Formats


                    Pacheco, J. L., Singh, M., Perry, D. L., Wendt, J. R., Ten Eyck, G., Manginell, R. P., Pluym, T., Luhman, D. R., Lilly, M. P., Carroll, M. S., and Bielejec, E. Ion implantation for deterministic single atom devices.  United States: N. p., 2017. 
Web.  doi:10.1063/1.5001520.

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                    Pacheco, J. L., Singh, M., Perry, D. L., Wendt, J. R., Ten Eyck, G., Manginell, R. P., Pluym, T., Luhman, D. R., Lilly, M. P., Carroll, M. S., & Bielejec, E. Ion implantation for deterministic single atom devices.  United States.  https://doi.org/10.1063/1.5001520

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                    Pacheco, J. L., Singh, M., Perry, D. L., Wendt, J. R., Ten Eyck, G., Manginell, R. P., Pluym, T., Luhman, D. R., Lilly, M. P., Carroll, M. S., and Bielejec, E. Mon .  
"Ion implantation for deterministic single atom devices".  United States.  https://doi.org/10.1063/1.5001520.  https://www.osti.gov/servlets/purl/1411229.

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@article{osti_1411229,

  title        = {Ion implantation for deterministic single atom devices},

  author       = {Pacheco, J. L. and Singh, M. and Perry, D. L. and Wendt, J. R. and Ten Eyck, G. and Manginell, R. P. and Pluym, T. and Luhman, D. R. and Lilly, M. P. and Carroll, M. S. and Bielejec, E.},

  abstractNote = {Here, we demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom devices in materials where the nanostructure and ion detectors can be integrated, including donor-based qubits in Si and color centers in diamond.},

  doi          = {10.1063/1.5001520},

  journal      = {Review of Scientific Instruments},

  number       = 12,

  volume       = 88,

  place        = {United States},

  year         = {Mon Dec 04 00:00:00 EST 2017},

  month        = {Mon Dec 04 00:00:00 EST 2017}

}

Copy to clipboard

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Works referenced in this record:

A silicon-based nuclear spin quantum computer
journal, May 1998

Kane, B. E.
Nature, Vol. 393, Issue 6681
DOI: 10.1038/30156

Electron spin relaxation times of phosphorus donors in silicon
journal, November 2003

Tyryshkin, A. M.; Lyon, S. A.; Astashkin, A. V.
Physical Review B, Vol. 68, Issue 19
DOI: 10.1103/physrevb.68.193207

Deterministic Coupling of a Single Nitrogen Vacancy Center to a Photonic Crystal Cavity
journal, October 2010

Englund, Dirk; Shields, Brendan; Rivoire, Kelley
Nano Letters, Vol. 10, Issue 10
DOI: 10.1021/nl101662v

Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth product
journal, March 1998

Nie, H.; Anselm, K. A.; Lenox, C.
IEEE Photonics Technology Letters, Vol. 10, Issue 3
DOI: 10.1109/68.661426

Focused ion beam fabrication and IBIC characterization of a diamond detector with buried electrodes
journal, October 2011

Olivero, P.; Forneris, J.; Jakšić, M.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 269, Issue 20
DOI: 10.1016/j.nimb.2011.02.021

Deterministic Coupling of a Single Silicon-Vacancy Color Center to a Photonic Crystal Cavity in Diamond
journal, August 2014

Riedrich-Möller, Janine; Arend, Carsten; Pauly, Christoph
Nano Letters, Vol. 14, Issue 9
DOI: 10.1021/nl502327b

InGaAsP heterostructure avalanche photodiodes with high avalanche gain
journal, August 1979

Nishida, Katsuhiko; Taguchi, Kenko; Matsumoto, Yoshishige
Applied Physics Letters, Vol. 35, Issue 3
DOI: 10.1063/1.91089

The response of silicon detectors to low-energy ion implantation
journal, September 2008

Hopf, T.; Yang, C.; Andresen, S. E.
Journal of Physics: Condensed Matter, Vol. 20, Issue 41
DOI: 10.1088/0953-8984/20/41/415205

Single-shot readout of an electron spin in silicon
journal, September 2010

Morello, Andrea; Pla, Jarryd J.; Zwanenburg, Floris A.
Nature, Vol. 467, Issue 7316
DOI: 10.1038/nature09392

Room temperature single ion detection with Geiger mode avalanche diode detectors
journal, July 2008

Seamons, J. A.; Bielejec, E.; Carroll, M. S.
Applied Physics Letters, Vol. 93, Issue 4
DOI: 10.1063/1.2967211

Theory of one and two donors in silicon
journal, March 2015

Saraiva, A. L.; Baena, A.; Calderón, M. J.
Journal of Physics: Condensed Matter, Vol. 27, Issue 15
DOI: 10.1088/0953-8984/27/15/154208

A review of ion beam induced charge microscopy
journal, November 2007

Breese, M. B. H.; Vittone, E.; Vizkelethy, G.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 264, Issue 2
DOI: 10.1016/j.nimb.2007.09.031

Controlled shallow single-ion implantation in silicon using an active substrate for sub-20‐keV ions
journal, May 2005

Jamieson, D. N.; Yang, C.; Hopf, T.
Applied Physics Letters, Vol. 86, Issue 20
DOI: 10.1063/1.1925320

Single ion implantation for single donor devices using Geiger mode detectors
journal, January 2010

Bielejec, E.; Seamons, J. A.; Carroll, M. S.
Nanotechnology, Vol. 21, Issue 8
DOI: 10.1088/0957-4484/21/8/085201

Single atom devices by ion implantation
journal, March 2015

van Donkelaar, Jessica; Yang, C.; Alves, A. D. C.
Journal of Physics: Condensed Matter, Vol. 27, Issue 15
DOI: 10.1088/0953-8984/27/15/154204

Enhancing semiconductor device performance using ordered dopant arrays
journal, October 2005

Shinada, Takahiro; Okamoto, Shintaro; Kobayashi, Takahiro
Nature, Vol. 437, Issue 7062
DOI: 10.1038/nature04086

Pattern level assembly of Ge quantum dots on Si with focused ion beam templating
journal, July 2008

Gherasimova, M.; Hull, R.; Reuter, M. C.
Applied Physics Letters, Vol. 93, Issue 2
DOI: 10.1063/1.2957676

Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
journal, June 2010

Johnson, B. C.; Tettamanzi, G. C.; Alves, A. D. C.
Applied Physics Letters, Vol. 96, Issue 26
DOI: 10.1063/1.3458783

Electrostatically defined silicon quantum dots with counted antimony donor implants
journal, February 2016

Singh, M.; Pacheco, J. L.; Perry, D.
Applied Physics Letters, Vol. 108, Issue 6
DOI: 10.1063/1.4940421

Hydrogenic Spin Quantum Computing in Silicon: A Digital Approach
journal, February 2003

Skinner, A. J.; Davenport, M. E.; Kane, B. E.
Physical Review Letters, Vol. 90, Issue 8
DOI: 10.1103/physrevlett.90.087901

Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities
journal, January 2012

McCallum, Jeffrey C.; Jamieson, David N.; Yang, Changyi
Advances in Materials Science and Engineering, Vol. 2012
DOI: 10.1155/2012/272694

Influence of Secondary Electron Detection Efficiency on Controllability of Dopant Ion Number in Single Ion Implantation
journal, June 1999

Shinada, Takahiro; Ishikawa, Atsuki; Fujita, Makoto
Japanese Journal of Applied Physics, Vol. 38, Issue Part 1, No. 6A
DOI: 10.1143/jjap.38.3419

Mapping of ion beam induced current changes in FinFETs
journal, May 2009

Weis, C. D.; Schuh, A.; Batra, A.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 267, Issue 8-9, p. 1222-1225
DOI: 10.1016/j.nimb.2009.01.019

Focused ion beam modification of surfaces for directed self-assembly of InAs/GaAs(001) quantum dots
journal, October 2007

McKay, Hugh; Rudzinski, Paul; Dehne, Aaron
Nanotechnology, Vol. 18, Issue 45
DOI: 10.1088/0957-4484/18/45/455303

SRIM – The stopping and range of ions in matter (2010)
journal, June 2010

Ziegler, James F.; Ziegler, M. D.; Biersack, J. P.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 11-12
DOI: 10.1016/j.nimb.2010.02.091

Response of 100% internal carrier collection efficiency silicon photodiodes to low-energy ions
journal, January 2001

Funsten, H. O.; Ritzau, S. M.; Harper, R. W.
IEEE Transactions on Nuclear Science, Vol. 48, Issue 6
DOI: 10.1109/23.983131

An all-silicon linear chain NMR quantum computer
journal, March 2005

Itoh, Kohei M.
Solid State Communications, Vol. 133, Issue 11
DOI: 10.1016/j.ssc.2004.12.045

High-fidelity readout and control of a nuclear spin qubit in silicon
journal, April 2013

Pla, Jarryd J.; Tan, Kuan Y.; Dehollain, Juan P.
Nature, Vol. 496, Issue 7445
DOI: 10.1038/nature12011

Single-protein spin resonance spectroscopy under ambient conditions
journal, March 2015

Shi, F.; Zhang, Q.; Wang, P.
Science, Vol. 347, Issue 6226
DOI: 10.1126/science.aaa2253

Deterministic Coupling of Single Quantum Dots to Single Nanocavity Modes
journal, May 2005

Badolato, A.
Science, Vol. 308, Issue 5725
DOI: 10.1126/science.1109815

Coherent electron transport by adiabatic passage in an imperfect donor chain
journal, October 2010

Rahman, Rajib; Muller, Richard P.; Levy, James E.
Physical Review B, Vol. 82, Issue 15
DOI: 10.1103/physrevb.82.155315

The single electron transistor and artificial atoms
journal, November 2000

Kastner, M. A.
Annalen der Physik, Vol. 9, Issue 11-12
DOI: 10.1002/1521-3889(200011)9:11/12<885::aid-andp885>3.0.co;2-8

Integration of Scanning Probes and Ion Beams
journal, June 2005

Persaud, A.; Park, S. J.; Liddle, J. A.
Nano Letters, Vol. 5, Issue 6
DOI: 10.1021/nl0506103

Single ion implantation for single donor devices using Geiger mode detectors
text, January 2009

Bielejec, E.; Seamons, J. A.; Carroll, M. S.
arXiv
DOI: 10.48550/arxiv.0909.5189

Coherent electron transport by adiabatic passage in an imperfect donor chain
text, January 2010

Rahman, Rajib; Muller, Richard P.; Levy, James E.
arXiv
DOI: 10.48550/arxiv.1008.1494

High-fidelity readout and control of a nuclear spin qubit in silicon
text, January 2013

Pla, Jarryd J.; Tan, Kuan Y.; Dehollain, Juan P.
arXiv
DOI: 10.48550/arxiv.1302.0047

Robust two-qubit gates for donors in silicon controlled by hyperfine interactions
text, January 2013

Kalra, Rachpon; Laucht, Arne; Hill, Charles
arXiv
DOI: 10.48550/arxiv.1312.2197

Deterministic coupling of a single silicon-vacancy color center to a photonic crystal cavity in diamond
text, January 2014

Riedrich-Möller, Janine; Arend, Carsten; Pauly, Christoph
arXiv
DOI: 10.48550/arxiv.1408.1803

Focused ion beam fabrication and IBIC characterization of a diamond detector with buried electrodes
text, January 2016

Olivero, P.; Forneris, J.; Jaksic, M.
arXiv
DOI: 10.48550/arxiv.1608.07595

Hydrogenic Spin Quantum Computing in Silicon: A Digital Approach
text, January 2002

Skinner, A. J.; Davenport, M. E.; Kane, B. E.
arXiv
DOI: 10.48550/arxiv.quant-ph/0206159

Works referencing / citing this record:

Quantum Micro–Nano Devices Fabricated in Diamond by Femtosecond Laser and Ion Irradiation
journal, April 2019

Eaton, Shane M.; Hadden, John P.; Bharadwaj, Vibhav
Advanced Quantum Technologies, Vol. 2, Issue 5-6
DOI: 10.1002/qute.201900006

Quantum nanophotonics with group IV defects in diamond
journal, December 2019

Bradac, Carlo; Gao, Weibo; Forneris, Jacopo
Nature Communications, Vol. 10, Issue 1
DOI: 10.1038/s41467-019-13332-w

Coherent control and high-fidelity readout of chromium ions in commercial silicon carbide
journal, January 2020

Diler, Berk; Whiteley, Samuel J.; Anderson, Christopher P.
npj Quantum Information, Vol. 6, Issue 1
DOI: 10.1038/s41534-020-0247-7

Detection of small bunches of ions using image charges
journal, June 2018

Räcke, Paul; Spemann, Daniel; Gerlach, Jürgen W.
Scientific Reports, Vol. 8, Issue 1
DOI: 10.1038/s41598-018-28167-6

Characterization of a high-brightness, laser-cooled Li ⁺ ion source
journal, February 2019

Gardner, J. R.; McGehee, W. R.; McClelland, J. J.
Journal of Applied Physics, Vol. 125, Issue 7
DOI: 10.1063/1.5085068

Topological Quantum Optics Using Atomlike Emitter Arrays Coupled to Photonic Crystals
journal, February 2020

Perczel, J.; Borregaard, J.; Chang, D. E.
Physical Review Letters, Vol. 124, Issue 8
DOI: 10.1103/physrevlett.124.083603

Fabrication of highly dense arrays of nanocrystalline diamond nanopillars with integrated silicon-vacancy color centers during the growth
journal, January 2019

Schmidt, Alexander; Naydenov, Boris; Jelezko, Fedor
Optical Materials Express, Vol. 9, Issue 12
DOI: 10.1364/ome.9.004545

Quantum defects by design
journal, October 2019

Bassett, Lee C.; Alkauskas, Audrius; Exarhos, Annemarie L.
Nanophotonics, Vol. 8, Issue 11
DOI: 10.1515/nanoph-2019-0211

Fabrication of highly dense arrays of nanocrystalline diamond nanopillars with integrated silicon-vacancy color centers during the growth
text, January 2019

Schmidt, Alexander; Naydenov, Boris; Jelezko, Fedor
Universität Kassel
DOI: 10.17170/kobra-20191114782

Topological quantum optics using atom-like emitter arrays coupled to photonic crystals
text, January 2018

Perczel, Janos; Borregaard, Johannes; Chang, Darrick E.
arXiv
DOI: 10.48550/arxiv.1810.12299

Quantum Nanophotonics with Group IV defects in Diamond
text, January 2019

Bradac, Carlo; Gao, Weibo; Forneris, Jacopo
arXiv
DOI: 10.48550/arxiv.1906.10992

Quantum nanophotonics with group IV defects in diamond
journal, December 2019

Bradac, Carlo; Gao, Weibo; Forneris, Jacopo
Nature Communications, Vol. 10, Issue 1
DOI: 10.1038/s41467-019-13332-w

Characterization of a high-brightness, laser-cooled Li ⁺ ion source
journal, February 2019

Gardner, J. R.; McGehee, W. R.; McClelland, J. J.
Journal of Applied Physics, Vol. 125, Issue 7
DOI: 10.1063/1.5085068

Detection of small bunches of ions using image charges
text, January 2018

Räcke, Paul; Spemann, Daniel; Gerlach, Jürgen W.
London : Nature Publishing Group
DOI: 10.34657/10606

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Title: Ion implantation for deterministic single atom devices

Abstract

Citation Formats

A silicon-based nuclear spin quantum computer journal, May 1998

Electron spin relaxation times of phosphorus donors in silicon journal, November 2003

Deterministic Coupling of a Single Nitrogen Vacancy Center to a Photonic Crystal Cavity journal, October 2010

Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth product journal, March 1998

Focused ion beam fabrication and IBIC characterization of a diamond detector with buried electrodes journal, October 2011

Deterministic Coupling of a Single Silicon-Vacancy Color Center to a Photonic Crystal Cavity in Diamond journal, August 2014

InGaAsP heterostructure avalanche photodiodes with high avalanche gain journal, August 1979

The response of silicon detectors to low-energy ion implantation journal, September 2008

Single-shot readout of an electron spin in silicon journal, September 2010

Room temperature single ion detection with Geiger mode avalanche diode detectors journal, July 2008

Theory of one and two donors in silicon journal, March 2015

A review of ion beam induced charge microscopy journal, November 2007

Controlled shallow single-ion implantation in silicon using an active substrate for sub-20‐keV ions journal, May 2005

Single ion implantation for single donor devices using Geiger mode detectors journal, January 2010

Single atom devices by ion implantation journal, March 2015

Enhancing semiconductor device performance using ordered dopant arrays journal, October 2005

Pattern level assembly of Ge quantum dots on Si with focused ion beam templating journal, July 2008

Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation journal, June 2010

Electrostatically defined silicon quantum dots with counted antimony donor implants journal, February 2016

Hydrogenic Spin Quantum Computing in Silicon: A Digital Approach journal, February 2003

Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities journal, January 2012

Influence of Secondary Electron Detection Efficiency on Controllability of Dopant Ion Number in Single Ion Implantation journal, June 1999

Mapping of ion beam induced current changes in FinFETs journal, May 2009

Focused ion beam modification of surfaces for directed self-assembly of InAs/GaAs(001) quantum dots journal, October 2007

SRIM – The stopping and range of ions in matter (2010) journal, June 2010

Response of 100% internal carrier collection efficiency silicon photodiodes to low-energy ions journal, January 2001

An all-silicon linear chain NMR quantum computer journal, March 2005

High-fidelity readout and control of a nuclear spin qubit in silicon journal, April 2013

Single-protein spin resonance spectroscopy under ambient conditions journal, March 2015

Deterministic Coupling of Single Quantum Dots to Single Nanocavity Modes journal, May 2005

Coherent electron transport by adiabatic passage in an imperfect donor chain journal, October 2010

The single electron transistor and artificial atoms journal, November 2000

Integration of Scanning Probes and Ion Beams journal, June 2005

Single ion implantation for single donor devices using Geiger mode detectors text, January 2009

Coherent electron transport by adiabatic passage in an imperfect donor chain text, January 2010

High-fidelity readout and control of a nuclear spin qubit in silicon text, January 2013

Robust two-qubit gates for donors in silicon controlled by hyperfine interactions text, January 2013

Deterministic coupling of a single silicon-vacancy color center to a photonic crystal cavity in diamond text, January 2014

Focused ion beam fabrication and IBIC characterization of a diamond detector with buried electrodes text, January 2016

Hydrogenic Spin Quantum Computing in Silicon: A Digital Approach text, January 2002

Quantum Micro–Nano Devices Fabricated in Diamond by Femtosecond Laser and Ion Irradiation journal, April 2019

Quantum nanophotonics with group IV defects in diamond journal, December 2019

Coherent control and high-fidelity readout of chromium ions in commercial silicon carbide journal, January 2020

Detection of small bunches of ions using image charges journal, June 2018

Characterization of a high-brightness, laser-cooled Li + ion source journal, February 2019

Topological Quantum Optics Using Atomlike Emitter Arrays Coupled to Photonic Crystals journal, February 2020

Fabrication of highly dense arrays of nanocrystalline diamond nanopillars with integrated silicon-vacancy color centers during the growth journal, January 2019

Quantum defects by design journal, October 2019

Fabrication of highly dense arrays of nanocrystalline diamond nanopillars with integrated silicon-vacancy color centers during the growth text, January 2019

Topological quantum optics using atom-like emitter arrays coupled to photonic crystals text, January 2018

Quantum Nanophotonics with Group IV defects in Diamond text, January 2019

Quantum nanophotonics with group IV defects in diamond journal, December 2019

Characterization of a high-brightness, laser-cooled Li + ion source journal, February 2019

Detection of small bunches of ions using image charges text, January 2018

A silicon-based nuclear spin quantum computer
journal, May 1998

Electron spin relaxation times of phosphorus donors in silicon
journal, November 2003

Deterministic Coupling of a Single Nitrogen Vacancy Center to a Photonic Crystal Cavity
journal, October 2010

Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth product
journal, March 1998

Focused ion beam fabrication and IBIC characterization of a diamond detector with buried electrodes
journal, October 2011

Deterministic Coupling of a Single Silicon-Vacancy Color Center to a Photonic Crystal Cavity in Diamond
journal, August 2014

InGaAsP heterostructure avalanche photodiodes with high avalanche gain
journal, August 1979

The response of silicon detectors to low-energy ion implantation
journal, September 2008

Single-shot readout of an electron spin in silicon
journal, September 2010

Room temperature single ion detection with Geiger mode avalanche diode detectors
journal, July 2008

Theory of one and two donors in silicon
journal, March 2015

A review of ion beam induced charge microscopy
journal, November 2007

Controlled shallow single-ion implantation in silicon using an active substrate for sub-20‐keV ions
journal, May 2005

Single ion implantation for single donor devices using Geiger mode detectors
journal, January 2010

Single atom devices by ion implantation
journal, March 2015

Enhancing semiconductor device performance using ordered dopant arrays
journal, October 2005

Pattern level assembly of Ge quantum dots on Si with focused ion beam templating
journal, July 2008

Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
journal, June 2010

Electrostatically defined silicon quantum dots with counted antimony donor implants
journal, February 2016

Hydrogenic Spin Quantum Computing in Silicon: A Digital Approach
journal, February 2003

Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities
journal, January 2012

Influence of Secondary Electron Detection Efficiency on Controllability of Dopant Ion Number in Single Ion Implantation
journal, June 1999

Mapping of ion beam induced current changes in FinFETs
journal, May 2009

Focused ion beam modification of surfaces for directed self-assembly of InAs/GaAs(001) quantum dots
journal, October 2007

SRIM – The stopping and range of ions in matter (2010)
journal, June 2010

Response of 100% internal carrier collection efficiency silicon photodiodes to low-energy ions
journal, January 2001

An all-silicon linear chain NMR quantum computer
journal, March 2005

High-fidelity readout and control of a nuclear spin qubit in silicon
journal, April 2013

Single-protein spin resonance spectroscopy under ambient conditions
journal, March 2015

Deterministic Coupling of Single Quantum Dots to Single Nanocavity Modes
journal, May 2005

Coherent electron transport by adiabatic passage in an imperfect donor chain
journal, October 2010

The single electron transistor and artificial atoms
journal, November 2000

Integration of Scanning Probes and Ion Beams
journal, June 2005

Single ion implantation for single donor devices using Geiger mode detectors
text, January 2009

Coherent electron transport by adiabatic passage in an imperfect donor chain
text, January 2010

High-fidelity readout and control of a nuclear spin qubit in silicon
text, January 2013

Robust two-qubit gates for donors in silicon controlled by hyperfine interactions
text, January 2013

Deterministic coupling of a single silicon-vacancy color center to a photonic crystal cavity in diamond
text, January 2014

Focused ion beam fabrication and IBIC characterization of a diamond detector with buried electrodes
text, January 2016

Hydrogenic Spin Quantum Computing in Silicon: A Digital Approach
text, January 2002

Quantum Micro–Nano Devices Fabricated in Diamond by Femtosecond Laser and Ion Irradiation
journal, April 2019

Quantum nanophotonics with group IV defects in diamond
journal, December 2019

Coherent control and high-fidelity readout of chromium ions in commercial silicon carbide
journal, January 2020

Detection of small bunches of ions using image charges
journal, June 2018

Characterization of a high-brightness, laser-cooled Li ⁺ ion source
journal, February 2019

Topological Quantum Optics Using Atomlike Emitter Arrays Coupled to Photonic Crystals
journal, February 2020

Fabrication of highly dense arrays of nanocrystalline diamond nanopillars with integrated silicon-vacancy color centers during the growth
journal, January 2019

Quantum defects by design
journal, October 2019

Fabrication of highly dense arrays of nanocrystalline diamond nanopillars with integrated silicon-vacancy color centers during the growth
text, January 2019

Topological quantum optics using atom-like emitter arrays coupled to photonic crystals
text, January 2018

Quantum Nanophotonics with Group IV defects in Diamond
text, January 2019

Quantum nanophotonics with group IV defects in diamond
journal, December 2019

Characterization of a high-brightness, laser-cooled Li ⁺ ion source
journal, February 2019

Detection of small bunches of ions using image charges
text, January 2018