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Title: Ion implantation for deterministic single atom devices

Abstract

Here, we demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom devices in materials where the nanostructure and ion detectors can be integrated, including donor-based qubits in Si and color centers in diamond.

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [1]; ORCiD logo [1];  [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1411229
Report Number(s):
SAND-2017-11983J
Journal ID: ISSN 0034-6748; 658452; TRN: US1800202
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Review of Scientific Instruments
Additional Journal Information:
Journal Volume: 88; Journal Issue: 12; Journal ID: ISSN 0034-6748
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 74 ATOMIC AND MOLECULAR PHYSICS

Citation Formats

Pacheco, J. L., Singh, M., Perry, D. L., Wendt, J. R., Ten Eyck, G., Manginell, R. P., Pluym, T., Luhman, D. R., Lilly, M. P., Carroll, M. S., and Bielejec, E. Ion implantation for deterministic single atom devices. United States: N. p., 2017. Web. doi:10.1063/1.5001520.
Pacheco, J. L., Singh, M., Perry, D. L., Wendt, J. R., Ten Eyck, G., Manginell, R. P., Pluym, T., Luhman, D. R., Lilly, M. P., Carroll, M. S., & Bielejec, E. Ion implantation for deterministic single atom devices. United States. doi:10.1063/1.5001520.
Pacheco, J. L., Singh, M., Perry, D. L., Wendt, J. R., Ten Eyck, G., Manginell, R. P., Pluym, T., Luhman, D. R., Lilly, M. P., Carroll, M. S., and Bielejec, E. Mon . "Ion implantation for deterministic single atom devices". United States. doi:10.1063/1.5001520. https://www.osti.gov/servlets/purl/1411229.
@article{osti_1411229,
title = {Ion implantation for deterministic single atom devices},
author = {Pacheco, J. L. and Singh, M. and Perry, D. L. and Wendt, J. R. and Ten Eyck, G. and Manginell, R. P. and Pluym, T. and Luhman, D. R. and Lilly, M. P. and Carroll, M. S. and Bielejec, E.},
abstractNote = {Here, we demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom devices in materials where the nanostructure and ion detectors can be integrated, including donor-based qubits in Si and color centers in diamond.},
doi = {10.1063/1.5001520},
journal = {Review of Scientific Instruments},
number = 12,
volume = 88,
place = {United States},
year = {2017},
month = {12}
}

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Cited by: 3 works
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