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Title: Scalable focused ion beam creation of nearly lifetime-limited single quantum emitters in diamond nanostructures

The controlled creation of defect centre—nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here we demonstrate direct, maskless creation of atom-like single silicon vacancy (SiV) centres in diamond nanostructures via focused ion beam implantation with ~32 nm lateral precision and <50 nm positioning accuracy relative to a nanocavity. We determine the Si+ ion to SiV centre conversion yield to be ~2.5% and observe a 10-fold conversion yield increase by additional electron irradiation. Low-temperature spectroscopy reveals inhomogeneously broadened ensemble emission linewidths of ~51 GHz and close to lifetime-limited single-emitter transition linewidths down to 126±13 MHz corresponding to ~1.4 times the natural linewidth. Furthermore, this method for the targeted generation of nearly transform-limited quantum emitters should facilitate the development of scalable solid-state quantum information processors.
Authors:
 [1] ;  [2] ;  [2] ;  [2] ; ORCiD logo [2] ;  [2] ; ORCiD logo [3] ;  [3] ;  [4] ; ORCiD logo [3] ;  [5] ;  [5] ;  [5] ;  [3] ;  [2]
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Univ. of Copenhagen (Denmark)
  2. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  3. Harvard Univ., Cambridge, MA (United States)
  4. Harvard Univ., Cambridge, MA (United States); Russian Quantum Center and P.N. Lebedev Physical Institute, Moscow (Russia)
  5. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Report Number(s):
SAND2017-11849J
Journal ID: ISSN 2041-1723; 658324
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 8; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1411228

Schroder, Tim, Trusheim, Matthew E., Walsh, Michael, Li, Luozhou, Zheng, Jiabao, Schukraft, Marco, Sipahigil, Alp, Evans, Ruffin E., Sukachev, Denis D., Nguyen, Christian T., Pacheco, Jose L., Camacho, Ryan M., Bielejec, Edward S., Lukin, Mikhail D., and Englund, Dirk. Scalable focused ion beam creation of nearly lifetime-limited single quantum emitters in diamond nanostructures. United States: N. p., Web. doi:10.1038/ncomms15376.
Schroder, Tim, Trusheim, Matthew E., Walsh, Michael, Li, Luozhou, Zheng, Jiabao, Schukraft, Marco, Sipahigil, Alp, Evans, Ruffin E., Sukachev, Denis D., Nguyen, Christian T., Pacheco, Jose L., Camacho, Ryan M., Bielejec, Edward S., Lukin, Mikhail D., & Englund, Dirk. Scalable focused ion beam creation of nearly lifetime-limited single quantum emitters in diamond nanostructures. United States. doi:10.1038/ncomms15376.
Schroder, Tim, Trusheim, Matthew E., Walsh, Michael, Li, Luozhou, Zheng, Jiabao, Schukraft, Marco, Sipahigil, Alp, Evans, Ruffin E., Sukachev, Denis D., Nguyen, Christian T., Pacheco, Jose L., Camacho, Ryan M., Bielejec, Edward S., Lukin, Mikhail D., and Englund, Dirk. 2017. "Scalable focused ion beam creation of nearly lifetime-limited single quantum emitters in diamond nanostructures". United States. doi:10.1038/ncomms15376. https://www.osti.gov/servlets/purl/1411228.
@article{osti_1411228,
title = {Scalable focused ion beam creation of nearly lifetime-limited single quantum emitters in diamond nanostructures},
author = {Schroder, Tim and Trusheim, Matthew E. and Walsh, Michael and Li, Luozhou and Zheng, Jiabao and Schukraft, Marco and Sipahigil, Alp and Evans, Ruffin E. and Sukachev, Denis D. and Nguyen, Christian T. and Pacheco, Jose L. and Camacho, Ryan M. and Bielejec, Edward S. and Lukin, Mikhail D. and Englund, Dirk},
abstractNote = {The controlled creation of defect centre—nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here we demonstrate direct, maskless creation of atom-like single silicon vacancy (SiV) centres in diamond nanostructures via focused ion beam implantation with ~32 nm lateral precision and <50 nm positioning accuracy relative to a nanocavity. We determine the Si+ ion to SiV centre conversion yield to be ~2.5% and observe a 10-fold conversion yield increase by additional electron irradiation. Low-temperature spectroscopy reveals inhomogeneously broadened ensemble emission linewidths of ~51 GHz and close to lifetime-limited single-emitter transition linewidths down to 126±13 MHz corresponding to ~1.4 times the natural linewidth. Furthermore, this method for the targeted generation of nearly transform-limited quantum emitters should facilitate the development of scalable solid-state quantum information processors.},
doi = {10.1038/ncomms15376},
journal = {Nature Communications},
number = ,
volume = 8,
place = {United States},
year = {2017},
month = {5}
}