Microstructure, mechanical and electrical properties of nanocrystalline W-Mo thin films
Abstract
The effect of sputtering pressure on the surface/interface microstructure, crystal phase, mechanical properties and electrical characteristics of nanocrystalline W-Mo films is reported. The W-Mo films (≈300 nm) with variable microstructure were deposited under variable argon (Ar) sputtering pressure (PAr), which is varied in the range of 3-19 mTorr. X-ray diffraction analyses indicate that the W-Mo films crystallize in thermodynamically stable α-phase of W. However, the crystal-quality degradation occurs for W-Mo films deposited at higher PAr due to difference in the adatom mobilities. The average grain size (d) of the W-Mo films was in the range of 11-24 nm; grain size decreases with increasing PAr. The effect of PAr and associated microstructure are significant on the mechanical characteristics; the hardness (H) and modulus of elasticity (Er) of W-Mo films deposited at lower PAr were higher but decreases continuously with increasing PAr. The W-Mo films deposited under optimum sputtering pressure exhibit superior mechanical characteristics: H=40 GPa, Er=275 GPa, H/Er=0.8, and H3/Er2=0.145 GPa, which are higher compared to pure, α-phase W-films. The W-Mo films deposited at PAr=3-9 mTorr exhibit high resistivity≈350-400 μΩ-cm, which decreases to 150-200 μΩ-cm for films deposited at higher PAr. Based on the results, structure-mechanical-electrical property correlation in W-Mo filmsmore »
- Authors:
-
- Univ. of Texas at El Paso, El Paso, Texas (United States)
- Publication Date:
- Research Org.:
- Univ. of California, Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1499152
- Alternate Identifier(s):
- OSTI ID: 1410857
- Grant/Contract Number:
- NA0000979
- Resource Type:
- Accepted Manuscript
- Journal Name:
- AIP Advances
- Additional Journal Information:
- Journal Volume: 7; Journal Issue: 12; Journal ID: ISSN 2158-3226
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Martinez, G., and Ramana, Chintalapalle V. Microstructure, mechanical and electrical properties of nanocrystalline W-Mo thin films. United States: N. p., 2017.
Web. doi:10.1063/1.5009008.
Martinez, G., & Ramana, Chintalapalle V. Microstructure, mechanical and electrical properties of nanocrystalline W-Mo thin films. United States. https://doi.org/10.1063/1.5009008
Martinez, G., and Ramana, Chintalapalle V. Fri .
"Microstructure, mechanical and electrical properties of nanocrystalline W-Mo thin films". United States. https://doi.org/10.1063/1.5009008. https://www.osti.gov/servlets/purl/1499152.
@article{osti_1499152,
title = {Microstructure, mechanical and electrical properties of nanocrystalline W-Mo thin films},
author = {Martinez, G. and Ramana, Chintalapalle V.},
abstractNote = {The effect of sputtering pressure on the surface/interface microstructure, crystal phase, mechanical properties and electrical characteristics of nanocrystalline W-Mo films is reported. The W-Mo films (≈300 nm) with variable microstructure were deposited under variable argon (Ar) sputtering pressure (PAr), which is varied in the range of 3-19 mTorr. X-ray diffraction analyses indicate that the W-Mo films crystallize in thermodynamically stable α-phase of W. However, the crystal-quality degradation occurs for W-Mo films deposited at higher PAr due to difference in the adatom mobilities. The average grain size (d) of the W-Mo films was in the range of 11-24 nm; grain size decreases with increasing PAr. The effect of PAr and associated microstructure are significant on the mechanical characteristics; the hardness (H) and modulus of elasticity (Er) of W-Mo films deposited at lower PAr were higher but decreases continuously with increasing PAr. The W-Mo films deposited under optimum sputtering pressure exhibit superior mechanical characteristics: H=40 GPa, Er=275 GPa, H/Er=0.8, and H3/Er2=0.145 GPa, which are higher compared to pure, α-phase W-films. The W-Mo films deposited at PAr=3-9 mTorr exhibit high resistivity≈350-400 μΩ-cm, which decreases to 150-200 μΩ-cm for films deposited at higher PAr. Based on the results, structure-mechanical-electrical property correlation in W-Mo films is established.},
doi = {10.1063/1.5009008},
journal = {AIP Advances},
number = 12,
volume = 7,
place = {United States},
year = {Fri Dec 01 00:00:00 EST 2017},
month = {Fri Dec 01 00:00:00 EST 2017}
}
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Cited by: 11 works
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TABLE I: Sputtering deposition parameters employed for the fabrication of W-Mo thin films.
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