skip to main content

DOE PAGESDOE PAGES

This content will become publicly available on November 30, 2018

Title: Electronic Transport and Ferroelectric Switching in Ion-Bombarded, Defect-Engineered BiFeO 3 Thin Films

Authors:
ORCiD logo [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [2]
  1. Department of Materials Science and Engineering, University of California, Berkeley, Berkeley CA 94720 USA
  2. Department of Materials Science and Engineering, University of California, Berkeley, Berkeley CA 94720 USA, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley CA 94720 USA
Publication Date:
Grant/Contract Number:
SC-0012375
Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Materials Interfaces
Additional Journal Information:
Journal Name: Advanced Materials Interfaces Journal Volume: 5 Journal Issue: 3; Journal ID: ISSN 2196-7350
Publisher:
Wiley Blackwell (John Wiley & Sons)
Sponsoring Org:
USDOE
Country of Publication:
Germany
Language:
English
OSTI Identifier:
1410720

Saremi, Sahar, Xu, Ruijuan, Dedon, Liv R., Gao, Ran, Ghosh, Anirban, Dasgupta, Arvind, and Martin, Lane W.. Electronic Transport and Ferroelectric Switching in Ion-Bombarded, Defect-Engineered BiFeO 3 Thin Films. Germany: N. p., Web. doi:10.1002/admi.201700991.
Saremi, Sahar, Xu, Ruijuan, Dedon, Liv R., Gao, Ran, Ghosh, Anirban, Dasgupta, Arvind, & Martin, Lane W.. Electronic Transport and Ferroelectric Switching in Ion-Bombarded, Defect-Engineered BiFeO 3 Thin Films. Germany. doi:10.1002/admi.201700991.
Saremi, Sahar, Xu, Ruijuan, Dedon, Liv R., Gao, Ran, Ghosh, Anirban, Dasgupta, Arvind, and Martin, Lane W.. 2017. "Electronic Transport and Ferroelectric Switching in Ion-Bombarded, Defect-Engineered BiFeO 3 Thin Films". Germany. doi:10.1002/admi.201700991.
@article{osti_1410720,
title = {Electronic Transport and Ferroelectric Switching in Ion-Bombarded, Defect-Engineered BiFeO 3 Thin Films},
author = {Saremi, Sahar and Xu, Ruijuan and Dedon, Liv R. and Gao, Ran and Ghosh, Anirban and Dasgupta, Arvind and Martin, Lane W.},
abstractNote = {},
doi = {10.1002/admi.201700991},
journal = {Advanced Materials Interfaces},
number = 3,
volume = 5,
place = {Germany},
year = {2017},
month = {11}
}

Works referenced in this record:

Ion implantation for isolation of III-V semiconductors
journal, January 1990