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Title: Dislocations Accelerate Oxygen Ion Diffusion in La 0.8 Sr 0.2 MnO 3 Epitaxial Thin Films

Abstract

Revealing whether dislocations accelerate oxygen ion transport is important for providing abilities in tuning the ionic conductivity of ceramic materials. In this study, we report how dislocations affect oxygen ion diffusion in Sr-doped LaMnO3 (LSM), a model perovskite oxide that serves in energy conversion technologies. LSM epitaxial thin films with thicknesses ranging from 10 nm to more than 100 nm were prepared by pulsed laser deposition on single-crystal LaAlO3 and SrTiO3 substrates. The lattice mismatch between the film and substrates induces compressive or tensile in-plane strain in the LSM layers. This lattice strain is partially reduced by dislocations, especially in the LSM films on LaAlO3. Oxygen isotope exchange measured by secondary ion mass spectrometry revealed the existence of at least two very different diffusion coefficients in the LSM films on LaAlO3. In conclusion, the diffusion profiles can be quantitatively explained by the existence of fast oxygen ion diffusion along threading dislocations that is faster by up to 3 orders of magnitude compared to that in LSM bulk.

Authors:
ORCiD logo [1]; ORCiD logo; ;  [2];  [1];  [2];  [2];  [1];  [1]; ;  [1]
  1. Institute of Chemical Technologies and Analytics, Vienna University of Technology, Getreidemarkt 9, Vienna A-1060, Austria
  2. University Service Centre for Transmission Electron Microscopy, Vienna University of Technology, Wiedner Hauptstr. 8-10, Vienna A-1040, Austria
Publication Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1410461
Alternate Identifier(s):
OSTI ID: 1421603
Grant/Contract Number:  
SC0002633
Resource Type:
Published Article
Journal Name:
ACS Nano
Additional Journal Information:
Journal Name: ACS Nano Journal Volume: 11 Journal Issue: 11; Journal ID: ISSN 1936-0851
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; (La,Sr)MnO3; dislocation; epitaxial thin film; oxygen diffusion; oxygen surface exchange; strain; ToF-SIMS

Citation Formats

Navickas, Edvinas, Chen, Yan, Lu, Qiyang, Wallisch, Wolfgang, Huber, Tobias M., Bernardi, Johannes, Stöger-Pollach, Michael, Friedbacher, Gernot, Hutter, Herbert, Yildiz, Bilge, and Fleig, Jürgen. Dislocations Accelerate Oxygen Ion Diffusion in La 0.8 Sr 0.2 MnO 3 Epitaxial Thin Films. United States: N. p., 2017. Web. doi:10.1021/acsnano.7b06228.
Navickas, Edvinas, Chen, Yan, Lu, Qiyang, Wallisch, Wolfgang, Huber, Tobias M., Bernardi, Johannes, Stöger-Pollach, Michael, Friedbacher, Gernot, Hutter, Herbert, Yildiz, Bilge, & Fleig, Jürgen. Dislocations Accelerate Oxygen Ion Diffusion in La 0.8 Sr 0.2 MnO 3 Epitaxial Thin Films. United States. doi:10.1021/acsnano.7b06228.
Navickas, Edvinas, Chen, Yan, Lu, Qiyang, Wallisch, Wolfgang, Huber, Tobias M., Bernardi, Johannes, Stöger-Pollach, Michael, Friedbacher, Gernot, Hutter, Herbert, Yildiz, Bilge, and Fleig, Jürgen. Wed . "Dislocations Accelerate Oxygen Ion Diffusion in La 0.8 Sr 0.2 MnO 3 Epitaxial Thin Films". United States. doi:10.1021/acsnano.7b06228.
@article{osti_1410461,
title = {Dislocations Accelerate Oxygen Ion Diffusion in La 0.8 Sr 0.2 MnO 3 Epitaxial Thin Films},
author = {Navickas, Edvinas and Chen, Yan and Lu, Qiyang and Wallisch, Wolfgang and Huber, Tobias M. and Bernardi, Johannes and Stöger-Pollach, Michael and Friedbacher, Gernot and Hutter, Herbert and Yildiz, Bilge and Fleig, Jürgen},
abstractNote = {Revealing whether dislocations accelerate oxygen ion transport is important for providing abilities in tuning the ionic conductivity of ceramic materials. In this study, we report how dislocations affect oxygen ion diffusion in Sr-doped LaMnO3 (LSM), a model perovskite oxide that serves in energy conversion technologies. LSM epitaxial thin films with thicknesses ranging from 10 nm to more than 100 nm were prepared by pulsed laser deposition on single-crystal LaAlO3 and SrTiO3 substrates. The lattice mismatch between the film and substrates induces compressive or tensile in-plane strain in the LSM layers. This lattice strain is partially reduced by dislocations, especially in the LSM films on LaAlO3. Oxygen isotope exchange measured by secondary ion mass spectrometry revealed the existence of at least two very different diffusion coefficients in the LSM films on LaAlO3. In conclusion, the diffusion profiles can be quantitatively explained by the existence of fast oxygen ion diffusion along threading dislocations that is faster by up to 3 orders of magnitude compared to that in LSM bulk.},
doi = {10.1021/acsnano.7b06228},
journal = {ACS Nano},
number = 11,
volume = 11,
place = {United States},
year = {2017},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1021/acsnano.7b06228

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Cited by: 13 works
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Works referencing / citing this record:

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Recent Advances in the Understanding of the Evolution of Surfaces and Interfaces in Solid Oxide Cells
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Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices
journal, August 2019

  • Petzold, Stefan; Zintler, Alexander; Eilhardt, Robert
  • Advanced Electronic Materials, Vol. 5, Issue 10
  • DOI: 10.1002/aelm.201900484