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Title: Gate-Voltage Control of Borophene Structure Formation

Authors:
ORCiD logo [1] ;  [1] ;  [1] ;  [1]
  1. Department of Materials Science and NanoEngineering, Rice University, Houston TX 77005 USA
Publication Date:
Grant/Contract Number:
SC0012547
Type:
Publisher's Accepted Manuscript
Journal Name:
Angewandte Chemie (International Edition)
Additional Journal Information:
Journal Name: Angewandte Chemie (International Edition) Journal Volume: 56 Journal Issue: 48; Journal ID: ISSN 1433-7851
Publisher:
Wiley Blackwell (John Wiley & Sons)
Sponsoring Org:
USDOE
Country of Publication:
Germany
Language:
English
OSTI Identifier:
1410134

Zhang, Zhuhua, Shirodkar, Sharmila N., Yang, Yang, and Yakobson, Boris I.. Gate-Voltage Control of Borophene Structure Formation. Germany: N. p., Web. doi:10.1002/anie.201705459.
Zhang, Zhuhua, Shirodkar, Sharmila N., Yang, Yang, & Yakobson, Boris I.. Gate-Voltage Control of Borophene Structure Formation. Germany. doi:10.1002/anie.201705459.
Zhang, Zhuhua, Shirodkar, Sharmila N., Yang, Yang, and Yakobson, Boris I.. 2017. "Gate-Voltage Control of Borophene Structure Formation". Germany. doi:10.1002/anie.201705459.
@article{osti_1410134,
title = {Gate-Voltage Control of Borophene Structure Formation},
author = {Zhang, Zhuhua and Shirodkar, Sharmila N. and Yang, Yang and Yakobson, Boris I.},
abstractNote = {},
doi = {10.1002/anie.201705459},
journal = {Angewandte Chemie (International Edition)},
number = 48,
volume = 56,
place = {Germany},
year = {2017},
month = {10}
}

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Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
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