Impact of laser anneal on NiPt silicide texture and chemical composition
Abstract
We have combined synchrotron X-ray pole figure measurements and transmission electron microscopy (TEM) nano-beam diffraction to study the impact of millisecond laser anneal on the texture and microstructure of NiPt silicide thin films. The powerful use of nano-beam diffraction in plan-view geometry allows here for both a mapping of grain orientation and intra-grain measurements even if these crystalline grains become very small. With this unique combination of local and large-scale probes, we find that silicide formation on n and p doped substrates using laser annealing results in smaller grains compared with the films processed using standard rapid thermal annealing. The laser annealed samples also result in grains that are more epitaxially oriented with respect to the Si substrate. For n-type substrate, the film is dominated by (020) and (013) oriented fibers with significant levels of intra-grain bending (transrotation) observed in both types of grains. For p-type substrates, mostly epitaxially aligned grains are detected. TEM coupled with energy-dispersive X-ray analysis was also used to study the elemental distribution in the silicide samples. Furthermore, we confirm that laser anneal leads to a larger accumulation of platinum at the silicide-substrate interface and modifies the distribution of dopants throughout the film.
- Authors:
-
[1];
[4];
- STMicroelectronics, Crolles Cedex (France); Univ. Grenoble Alpes, Grenoble (France)
- IBM Almaden Research Center, San Jose, CA (United States); IBM, Crolles Cedex (France)
- IBM T. J. Watson Research Center, Yorktown Heights, NY (United States)
- STMicroelectronics, Crolles Cedex (France)
- Univ. Grenoble Alpes, Grenoble (France)
- Publication Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1409558
- Alternate Identifier(s):
- OSTI ID: 1372507
- Report Number(s):
- BNL-114610-2017-JA
Journal ID: ISSN 0021-8979
- Grant/Contract Number:
- SC0012704; AC02-98CH10886
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 121; Journal Issue: 22; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Synchrotrons; Crystal structure; Chemical elements; Transmission electron microscopy; Energy dispersive X-ray spectroscopy; Transition metals; Semiconductor device fabrication; Silicide; Thin films; Annealing
Citation Formats
Feautrier, C., Ozcan, A. S., Lavoie, C., Valery, A., Beneyton, R., Borowiak, C., Clément, L., Pofelski, A., and Salem, B. Impact of laser anneal on NiPt silicide texture and chemical composition. United States: N. p., 2017.
Web. doi:10.1063/1.4985279.
Feautrier, C., Ozcan, A. S., Lavoie, C., Valery, A., Beneyton, R., Borowiak, C., Clément, L., Pofelski, A., & Salem, B. Impact of laser anneal on NiPt silicide texture and chemical composition. United States. https://doi.org/10.1063/1.4985279
Feautrier, C., Ozcan, A. S., Lavoie, C., Valery, A., Beneyton, R., Borowiak, C., Clément, L., Pofelski, A., and Salem, B. Mon .
"Impact of laser anneal on NiPt silicide texture and chemical composition". United States. https://doi.org/10.1063/1.4985279. https://www.osti.gov/servlets/purl/1409558.
@article{osti_1409558,
title = {Impact of laser anneal on NiPt silicide texture and chemical composition},
author = {Feautrier, C. and Ozcan, A. S. and Lavoie, C. and Valery, A. and Beneyton, R. and Borowiak, C. and Clément, L. and Pofelski, A. and Salem, B.},
abstractNote = {We have combined synchrotron X-ray pole figure measurements and transmission electron microscopy (TEM) nano-beam diffraction to study the impact of millisecond laser anneal on the texture and microstructure of NiPt silicide thin films. The powerful use of nano-beam diffraction in plan-view geometry allows here for both a mapping of grain orientation and intra-grain measurements even if these crystalline grains become very small. With this unique combination of local and large-scale probes, we find that silicide formation on n and p doped substrates using laser annealing results in smaller grains compared with the films processed using standard rapid thermal annealing. The laser annealed samples also result in grains that are more epitaxially oriented with respect to the Si substrate. For n-type substrate, the film is dominated by (020) and (013) oriented fibers with significant levels of intra-grain bending (transrotation) observed in both types of grains. For p-type substrates, mostly epitaxially aligned grains are detected. TEM coupled with energy-dispersive X-ray analysis was also used to study the elemental distribution in the silicide samples. Furthermore, we confirm that laser anneal leads to a larger accumulation of platinum at the silicide-substrate interface and modifies the distribution of dopants throughout the film.},
doi = {10.1063/1.4985279},
journal = {Journal of Applied Physics},
number = 22,
volume = 121,
place = {United States},
year = {Mon Jun 12 00:00:00 EDT 2017},
month = {Mon Jun 12 00:00:00 EDT 2017}
}
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Works referencing / citing this record:
The influence of alloying on the phase formation sequence of ultra-thin nickel silicide films and on the inheritance of texture
journal, May 2018
- Geenen, F. A.; Solano, E.; Jordan-Sweet, J.
- Journal of Applied Physics, Vol. 123, Issue 18