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Title: Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities

Abstract

Here, the current-induced spin polarization and momentum-dependent spin-orbit field were measured in In xGa 1-xAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the extrinsic contributions to the spin-polarization mechanism must be considered. Theoretical calculations based on a model that includes extrinsic contributions to the spin dephasing and the spin Hall effect, in addition to the intrinsic Rashba and Dresselhaus spin-orbit coupling, are found to reproduce the experimental finding that the crystal direction with the smaller net spin-orbit field has larger electrical spin generation efficiency and are used to predict how sample parameters affect the magnitude of the current-induced spin polarization.

Authors:
 [1];  [1];  [1];  [1];  [1];  [2];  [1]
  1. Univ. of Michigan, Ann Arbor, MI (United States)
  2. Univ. Rome Tre, Rome (Italy)
Publication Date:
Research Org.:
Univ. of Michigan, Ann Arbor, MI (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1409026
Alternate Identifier(s):
OSTI ID: 1409128
Grant/Contract Number:  
SC0016206
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 96; Journal Issue: 19; Related Information: https://journals.aps.org/prb/supplemental/10.1103/PhysRevB.96.195206/Luengo_Supplement.pdf; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Luengo-Kovac, Marta, Huang, Simon, Del Gaudio, Davide, Occena, Jordan, Goldman, Rachel S., Raimondi, Roberto, and Sih, Vanessa. Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.96.195206.
Luengo-Kovac, Marta, Huang, Simon, Del Gaudio, Davide, Occena, Jordan, Goldman, Rachel S., Raimondi, Roberto, & Sih, Vanessa. Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities. United States. doi:10.1103/PhysRevB.96.195206.
Luengo-Kovac, Marta, Huang, Simon, Del Gaudio, Davide, Occena, Jordan, Goldman, Rachel S., Raimondi, Roberto, and Sih, Vanessa. Thu . "Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities". United States. doi:10.1103/PhysRevB.96.195206. https://www.osti.gov/servlets/purl/1409026.
@article{osti_1409026,
title = {Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities},
author = {Luengo-Kovac, Marta and Huang, Simon and Del Gaudio, Davide and Occena, Jordan and Goldman, Rachel S. and Raimondi, Roberto and Sih, Vanessa},
abstractNote = {Here, the current-induced spin polarization and momentum-dependent spin-orbit field were measured in InxGa1-xAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the extrinsic contributions to the spin-polarization mechanism must be considered. Theoretical calculations based on a model that includes extrinsic contributions to the spin dephasing and the spin Hall effect, in addition to the intrinsic Rashba and Dresselhaus spin-orbit coupling, are found to reproduce the experimental finding that the crystal direction with the smaller net spin-orbit field has larger electrical spin generation efficiency and are used to predict how sample parameters affect the magnitude of the current-induced spin polarization.},
doi = {10.1103/PhysRevB.96.195206},
journal = {Physical Review B},
number = 19,
volume = 96,
place = {United States},
year = {2017},
month = {11}
}

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Cited by: 4 works
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Works referenced in this record:

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